Selective layer formation using deposition and removing

Patent metadata

Field	Value
Publication number	US-11804373-B2
Application number	US-202217934817-A
Country	US
Kind code	B2
Filing date	Sep 23, 2022
Priority date	May 2, 2018
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

First claim

What is claimed is:

1. A method of selectively forming a dielectric material on a first surface of a substrate, the method comprising:
providing a substrate comprising a first surface and a second surface, wherein the second surface comprises a passivation layer thereover; and
conducting a cyclical deposition process to selectively form a dielectric material on the first surface, wherein the cyclical deposition process comprises deposition cycles, wherein at least one deposition cycle of the deposition cycles comprises separately contacting the substrate with a precursor and a reactant to form the dielectric material on the first surface, and wherein passivation of the passivation layer on the second surface is removed during the at least one deposition cycle.

2. The method of claim 1 , further comprising depositing additional passivation over the passivation layer between two of the deposition cycles.

3. The method of claim 1 , wherein the cyclical deposition process is halted before the second surface is exposed by removal of the passivation of the passivation layer.

4. The method of claim 1 , wherein the passivation of the passivation layer on the second surface is removed in each of the deposition cycles of the cyclical deposition process that include contacting the substrate with the reactant.

5. The method of claim 1 , further comprising selectively depositing the passivation layer on the second surface relative to the first surface prior to beginning a first deposition cycle of the at least one deposition cycle.

6. The method of claim 1 , wherein the dielectric material comprises an oxide film.

7. The method of claim 6 , wherein the oxide film is a silicon oxide film.

8. The method of claim 6 , wherein the oxide film is a metal oxide film.

9. The method of claim 1 , wherein said contacting the substrate with the reactant comprises activating the reactant with plasma.

10. The method of claim 1 , wherein the cyclical deposition process is a plasma enhanced atomic layer deposition process.

11. The method of claim 1 , wherein the first surface is a dielectric surface and the second surface is a metal surface.

12. The method of claim 11 , wherein the metal surface comprises at least one of Co, Cu or W.

13. The method of claim 1 , wherein the reactant comprises oxygen.

14. The method of claim 1 , wherein the passivation layer comprises a polymer.

15. The method of claim 1 , wherein the passivation layer comprises an organic material.

16. The method of claim 1 , wherein the at least one deposition cycle begins with contacting the substrate with the reactant before contacting the substrate with the precursor.

17. A plasma enhanced method for selectively forming an oxide material on a dielectric surface of a substrate, the plasma enhanced method comprising:
providing a substrate comprising a dielectric surface and a metallic surface, wherein the metallic surface comprises a passivation layer thereover; and
conducting deposition cycles to selectively form an oxide material on the dielectric surface, at least one deposition cycle of the deposition cycles comprising separately contacting the substrate with a precursor and a reactant to form the oxide material on the dielectric surface, wherein the reactant comprises oxygen and plasma, and wherein passivation of the passivation layer on the metallic surface is removed by the reactant during the at least one deposition cycle.

18. The plasma enhanced method of claim 17 , further comprising depositing passivation material over the metallic surface between a first deposition cycle of the deposition cycles and a last deposition cycle of the deposition cycles.

19. The plasma enhanced method of claim 17 , wherein the passivation of the passivation layer is removed in each of the deposition cycles that comprises contacting the substrate with the reactant.

20. The plasma enhanced method of claim 17 , wherein the passivation layer comprises a polymer.

Assignees

• Asm Ip Holding Bv

Inventors

• Tois Eva E
• Pore Viljami J

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title