Quantum dot, method of preparing quantum dot, optical member including quantum dot, and electronic device including quantum dot

Patent metadata

Field	Value
Publication number	US-11802239-B2
Application number	US-202117203538-A
Country	US
Kind code	B2
Filing date	Mar 16, 2021
Priority date	Mar 21, 2020
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A 1 , and A 2 ; and a shell covering the core. A 1 is a Group V element, A 2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A 2 , and includes indium and A 1 , and the second region includes indium, A 1 , and A 2 , and indium and A 2 are alloyed with each other in the second region.

First claim

What is claimed is:

1. A quantum dot comprising:
a core including indium (In), A 1 , and A 2 ; and
a shell covering the core, wherein
A 1 is a Group V element,
A 2 is a Group III element other than indium,
the core includes a first region, and a second region covering the first region,
the first region does not include A 2 , and includes indium and A 1 ,
the second region includes indium, A 1 , and A 2 ,
indium and A 2 are alloyed with each other in the second region, and
the quantum dot emits blue light having a maximum emission wavelength in a range of about 400 nm to about 490 nm.

2. The quantum dot of claim 1 , wherein A 1 is nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), or a combination thereof.

3. The quantum dot of claim 1 , wherein A 2 is boron (B), aluminum (Al), gallium (Ga), thallium (Tl), or a combination thereof.

4. The quantum dot of claim 1 , wherein the first region includes InN, InP, InAs, InSb, InNP, InNAs, InNSb, InPAs, or InPSb.

5. The quantum dot of claim 1 , wherein the second region includes InGaN, InGaP, InGaAs, InGaSb, InGaNP, InGaNAs, InGaNSb, InGaPAs, InGaPSb, InAlN, InAlP, InAlAs, InAlSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAlN, InGaAlP, InGaAlAs, InGaAlSb, InGaAlNP, InGaAlNAs, InGaAlNSb, InGaAlPAs, or InGaAlPSb.

6. The quantum dot of claim 1 , wherein A 2 is introduced into the second region by a cation exchange reaction.

7. The quantum dot of claim 1 , wherein A 1 included in the first region is the same as A 1 included in the second region.

8. The quantum dot of claim 1 , wherein the concentration of A 2 included in the second region has a concentration gradient in which the concentration of A 2 gradually increases along a direction from an interface between the first region and the second region toward a surface of the core.

9. The quantum dot of claim 1 , wherein the shell includes a Group III-V semiconductor compound, a Group II-VI semiconductor compound, or a combination thereof.

10. The quantum dot of claim 9 , wherein
the Group III-V semiconductor compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combination thereof, and
the Group II-VI semiconductor compound includes ZnS, ZnSe, ZnTe, ZnO, MgS, MgSe, ZnSeS, ZnSeTe, ZnSTe, MgZnS, MgZnSe, or a combination thereof.

11. The quantum dot of claim 9 , wherein
the shell includes:
a first shell covering the core; and
a second shell covering the first shell,

the first shell includes GaP, ZnSe, ZnSeS, or a combination thereof, and
the second shell includes ZnS.

12. The quantum dot of claim 1 , wherein
the core further includes a third region covering the second region,
the third region does not include indium, and
the third region includes A 1 and A 2 .

13. A method of preparing a quantum dot, wherein
the quantum dot comprises:
a core including indium (In), A 1 , and A 2 ; and
a shell covering the core,

A 1 is a Group V element,
A 2 is a Group III element other than indium,
the core includes a first region and a second region covering the first region,
the first region does not include A 2 , and includes indium and A 1 ,
the second region includes indium, A 1 , and A 2 ,
indium and A 2 are alloyed with each other in the second region,
the quantum dot emits blue light having a maximum emission wavelength in a range of about 400 nm to about 490 nm, and
the method comprises:
providing a first particle including indium (In) and A 1 ;
forming the core by contacting the first particle with a composition including an A 2 -containing precursor at a temperature in a range of about 210° C. to about 340° C.; and
forming the shell covering the core.

14. The method of claim 13 , wherein the forming of the core includes forming a second region of the core by a cation exchange reaction in which at least indium cations of the first particle are substituted with A 2 cations by contacting the first particle with a composition including an A 2 -containing precursor.

15. The method of claim 13 , wherein the A 2 -containing precursor includes an A 2 -containing halogenide, an A 2 -containing oxide, an A 2 -containing nitride, an A 2 -containing antimonide, an A 2 -containing oxynitride, an A 2 -containing sulfide, an A 2 -containing oxyhalogenide, an A 2 -containing oxyhalogenide hydrate, an A 2 -containing nitrate, an A 2 -containing nitrate hydrate, an A 2 -containing sulfate, an A 2 -containing sulfate hydrate, an A 2 -containing amine derivative, an A 2 -containing hydrocarbon derivative, or a combination thereof.

16. An optical member comprising the quantum dot of claim 1 .

17. An electronic device comprising the quantum dot of claim 1 .

18. The electronic device of claim 17 , comprising:
a light source; and
a color conversion member disposed in a path of light emitted from the light source,
wherein the color conversion member includes the quantum dot.

19. The electronic device of claim 17 , comprising:
a light-emitting element including a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode,
wherein the light-emitting element includes the quantum dot.

Assignees

• Samsung Display Co Ltd
• Hongik Univ Industry Academia Cooperation Foundation

Inventors

• Ko Yunhyuk
• Yang Heesun
• Lee Changhee
• Kim Kyunghye
• Kim Sungwoon
• Jo Jungho

Classifications

• C09K11/626 Primary

  Halogenides (C09K11/621 takes precedence) · CPC title

• C01B19/04

  Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title

• C01G9/08

  Sulfides · CPC title

• C01G15/006

  Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title