Bulk acoustic wave resonators having doped piezoelectric material and an adhesion and diffusion barrier layer
US-2019326880-A1 · Oct 24, 2019 · US
Digitally tunable acoustic wave resonators
US11799448B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11799448-B2 |
| Application number | US-202117173919-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2021 |
| Priority date | Feb 14, 2020 |
| Publication date | Oct 24, 2023 |
| Grant date | Oct 24, 2023 |
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- Title
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Abstract
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A digitally tunable acoustic wave resonator includes, in part, a first electrode positioned above a substrate, a composite stack positioned above the first electrode, and a second electrode positioned above the composite stack. The composite stack may include one or more alternate layers of a ferroelectric layer and a transition-metal nitride layer. The transition-metal nitride layer can be positioned above the ferroelectric layer, except the ferroelectric layer at the top of the composite stack. The ferroelectric layer comprises an aluminum scandium nitride layer Al 1-x Sc x N, where 0<x<1.
First claim
Opening claim text (preview).
The invention claimed is: 1. A digitally tunable acoustic wave resonator comprising: a first electrode positioned above a substrate; a composite stack positioned above the first electrode, the composite stack comprising a plurality of alternate layers of a ferroelectric layer and a transition-metal nitride layer; and a second electrode positioned above the composite stack, wherein the ferroelectric layer comprises an aluminum scandium nitride layer (Al 1-x Sc x N), and wherein 0<x<1. 2. The digitally tunable acoustic wave resonator of claim 1 , wherein the transition-metal nitride layer comprises a Titanium nitride layer (TiN). 3. The digitally tunable acoustic wave resonator of claim 1 , wherein the transition-metal nitride layer comprises a Tantalum nitride layer (TaN). 4. The digitally tunable acoustic wave resonator of claim 1 , wherein the first electrode and the second electrode comprise Molybdenum (Mo). 5. The digitally tunable acoustic wave resonator of claim 1 , wherein the substrate comprises a Bragg mirror on single crystal silicon. 6. The digitally tunable acoustic wave resonator of claim 1 , wherein the substrate comprises silicon. 7. The digitally tunable acoustic wave resonator of claim 1 , wherein the ferroelectric layer has a thickness of about 20 nanometers to about 100 nanometers. 8. The digitally tunable acoustic wave resonator of claim 1 , wherein the transition-metal nitride layer has a thickness of about 5 nanometers to about 20 nanometers. 9. The digitally tunable acoustic wave resonator of claim 1 , wherein the composite stack has a thickness of about 500 nanometers to about 1000 nanometers. 10. The digitally tunable acoustic wave resonator of claim 1 , wherein the transition-metal nitride layer is positioned above a corresponding ferroelectric layer except the topmost ferroelectric layer in the composite stack. 11. The digitally tunable acoustic wave resonator of claim 1 , wherein 0.27<x<0.3. 12. A method of fabricating a digitally tunable acoustic wave resonator, comprising: forming a first electrode above a substrate; forming a composite stack above the first electrode, the composite stack comprising a plurality of alternate layers of a ferroelectric layer and a transition-metal nitride layer; and forming a second electrode above the composite stack, wherein the ferroelectric layer comprises an aluminum scandium nitride layer (Al 1-x Sc x N), and wherein 0<x<1. 13. The method of claim 12 , wherein the transition-metal nitride layer comprises a Titanium nitride layer (TiN). 14. The method of claim 12 , wherein the transition-metal nitride layer comprises a Tantalum nitride layer (TaN). 15. The method of claim 12 , wherein the first electrode and the second electrode comprise Molybdenum (Mo). 16. The method of claim 12 , wherein the substrate comprises a Bragg mirror on single crystal silicon. 17. The method of claim 12 , wherein 0.27<x<0.3. 18. The method of claim 12 , wherein the ferroelectric layer has a thickness of about 20 nanometers to about 100 nanometers. 19. The method of claim 12 , wherein the transition-metal nitride layer has a thickness of about 5 nanometers to about 20 nanometers. 20. The method of claim 12 , wherein the transition-metal nitride layer is positioned above a corresponding ferroelectric layer except the topmost ferroelectric layer in the composite stack.
Assignees
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Classifications
- H03H9/176Primary
consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title
for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title
consisting of ceramic · CPC title
for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title
Acoustic mirrors · CPC title
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Frequently asked questions
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- What does patent US11799448B2 cover?
- A digitally tunable acoustic wave resonator includes, in part, a first electrode positioned above a substrate, a composite stack positioned above the first electrode, and a second electrode positioned above the composite stack. The composite stack may include one or more alternate layers of a ferroelectric layer and a transition-metal nitride layer. The transition-metal nitride layer can be pos…
- Who is the assignee on this patent?
- Univ Florida
- What technology area does this patent fall under?
- Primary CPC classification H03H9/176. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).