Driving backplane, manufacturing method thereof, and display apparatus

Patent metadata

Field	Value
Publication number	US-11798958-B2
Application number	US-202017059501-A
Country	US
Kind code	B2
Filing date	Mar 11, 2020
Priority date	Mar 20, 2019
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

The manufacturing method of the driving backplane includes following steps. A first flexible base is formed on a surface of a rigid substrate. At least one type of conductive pattern is formed on a surface of the first flexible base. At least one type of first via is provided in the rigid substrate. At least one type of second via is provided in the first flexible base by using the rigid substrate as a mask and a conductive pillar is formed in the at least one type of second via, so that the conductive pillars are connected to respective types of conductive pattern in one-to-one correspondence. At least one type of driving chip is correspondingly bonded to the conductive pillar formed in the at least one type of second via from a side of the first flexible base away from the at least one type of conductive pattern.

First claim

What is claimed is:

1. A manufacturing method of a driving backplane, comprising:
providing a rigid substrate;
forming a first flexible base on a surface of the rigid substrate;
forming at least one type of conductive pattern on a surface of the first flexible base away from the rigid substrate, the at least one type of conductive pattern being configured to transmit a driving signal;
providing at least one type of first via in the rigid substrate;
providing at least one type of second via in the first flexible base by using the rigid substrate as a mask, and forming a conductive pillar in the at least one type of second via, so that the conductive pillar formed in the at least one type of second via is connected to the at least one type of conductive pattern in one-to-one correspondence; and
bonding at least one type of driving chip to the conductive pillar formed in the at least one type of second via correspondingly from a side of the first flexible base away from the at least one type of conductive pattern.

2. The manufacturing method of the driving backplane according to claim 1 , wherein after forming the conductive pillar in the at least one type of second via, and before bonding the at least one type of driving chip to the conductive pillar formed in the at least one type of second via correspondingly, the manufacturing method of the driving backplane further comprises:
removing the rigid substrate from the first flexible base.

3. The manufacturing method of the driving backplane according to claim 1 , wherein
before forming the first flexible base on the surface of the rigid substrate, the manufacturing method of the driving backplane further comprises:
modifying the rigid substrate so that the rigid substrate includes at least one type of modified region; and
providing the at least one type of first via in the rigid substrate includes:
providing the at least one type of first via in the at least one type of modified region correspondingly, so that an orthographic projection of an area occupied by the at least one type of first via on the first flexible base is located within an orthographic projection of the at least one type of conductive pattern on the first flexible base in one-to-one correspondence.

4. The manufacturing method of the driving backplane according to claim 1 , wherein the at least one type of conductive pattern includes a first type of conductive pattern, a second type of conductive pattern, and a third type of conductive pattern; and
after forming the at least one type of conductive pattern on the surface of the first flexible base away from the rigid substrate, and before providing the at least one type of first via in the rigid substrate, the manufacturing method of the driving backplane further comprises:
forming a thin film transistor (TFT) array and a common lead on a side of the first flexible base away from the rigid substrate, so that a first type of electrode included in the TFT array is correspondingly connected to the first type of conductive pattern, a second type of electrode included in the TFT array is correspondingly connected to the second type of conductive pattern, and the common lead is correspondingly connected to the third type of conductive pattern; and
forming a light emitting device (LED) array on a side of the TFT array away from the rigid substrate, so that a common electrode included in the LED array is connected to the common lead, and a driving electrode included in the LED array is connected to a third type of electrode included in the TFT array.

5. The manufacturing method of the driving backplane according to claim 4 , wherein after forming the LED array on the side of the TFT away from the rigid substrate, and before providing the at least one type of first via in the rigid substrate, the manufacturing method of the driving backplane further comprises:
forming a backplane protective layer on a surface of the LED array away from the rigid substrate; and
after bonding the at least one type of driving chip to the conductive pillar formed in the at least one type of second via correspondingly, the manufacturing method of the driving backplane further comprises:
removing the backplane protective layer from the surface of the LED array away from the rigid substrate.

6. The manufacturing method of the driving backplane according to claim 4 , wherein
after forming the TFT array and the common lead on the surface of the first flexible base, and before forming the LED array on the side of the TFT array away from the rigid substrate, the manufacturing method of the driving backplane further comprises:
forming a planarization layer on a surface of the TFT array away from the rigid substrate, so that the planarization layer is located on surfaces of the second type of electrode and the third type of electrode away from the rigid substrate; and
forming a first type of bonding layer and a second type of bonding layer that are insulated from each other on a surface of the planarization layer away from the rigid substrate, so that the first type of bonding layer is electrically connected to the third type of electrode, and the second type of bonding layer is electrically connected to the common lead; and
forming the LED array on the side of the TFT array away from the rigid substrate includes:
forming the LED array on surfaces of the first type of bonding layer and the second type of bonding layer away from the rigid substrate, so that the first type of bonding layer is connected to the driving electrode, and the second type of bonding layer is connected to the common electrode.

7. The manufacturing method of the driving backplane according to claim 6 , wherein
forming the first type of bonding layer and the second type of bonding layer that are insulated from each other on the surface of the planarization layer away from the rigid substrate includes:
forming a bonding forming layer on the surface of the planarization layer away from the rigid substrate;
patterning the bonding forming layer to obtain the first type of bonding layer and the second type of bonding layer, with an insulating gap between the first type of bonding layer and the second type of bonding layer; and
forming a bonding insulating layer at least in the insulating gap, so that the first type of bonding layer and the second type of bonding layer are insulated from each other.

8. The manufacturing method of the driving backplane according to claim 1 , wherein after forming the at least one type of conductive pattern on the surface of the first flexible base away from the rigid substrate, and before providing the at least one type of first via in the rigid substrate, the manufacturing method of the driving backplane further comprises:
forming a second flexible base on the surface of the first flexible base away from the rigid substrate, so that the at least one type of conductive pattern is located between the first flexible base and the second flexible base; and
forming a buffer layer on a surface of the second flexible base away from the rigid substrate.

9. The manufacturing method of the driving backplane according to claim 4 , wherein
the first type of electrode is a gate, the second type of electrode is a source, and the third type of electrode is a drain; or,
the first type of electrode is a gate, the second type of electrode is a drain, and the third type of electrode is a source.

10. A driving backplane, manufactured by using the manufacturing method of the driving backplane according to claim 1 .

11. A display apparatus, comprising the driving backplane according to claim 10 .

Assignees

• Beijing Boe Display Tech Co
• Boe Technology Group Co Ltd

Inventors

• Luo Wenqian
• Li Xiang
• Bu Zhanchang

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10D86/0214

  using temporary substrates · CPC title