Method for cleaning receptor layer of surface stress sensor

Patent metadata

Field	Value
Publication number	US-11796408-B2
Application number	US-201917267094-A
Country	US
Kind code	B2
Filing date	Aug 28, 2019
Priority date	Sep 3, 2018
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

A method for cleaning a receptor layer of a surface stress sensor according to an embodiment of the present invention includes, in a surface stress sensor that detects a change in surface stress of a thin film, the change being caused by a receptor layer disposed on a surface of the thin film, causing at least a part of a surface region of the thin film to generate heat or supplying heat to the receptor layer from the outside of the surface stress sensor. This makes it possible to easily perform efficient cleaning of a surface stress sensor such as a sensor that performs detection using a piezoresistor while avoiding structural complications as much as possible.

First claim

The invention claimed is:

1. A method for cleaning a receptor layer of a surface stress sensor,
wherein the surface stress sensor detects a change in surface stress of a silicon thin membrane, the change being caused by the receptor layer disposed on a surface of the silicon thin membrane, and
wherein the method comprises causing at least a part of a surface region of the silicon thin membrane to generate heat by causing a current to flow through at least a part of the silicon thin membrane.

2. The cleaning method according to claim 1 , wherein
the surface stress sensor detects the change in the surface stress by means of a piezoresistive portion disposed in a part of the silicon thin membrane.

3. The cleaning method according to claim 2 , wherein
the surface stress sensor further comprises a frame-shaped support member, and
the silicon thin membrane is connected to an inside of the frame shape of the support member via a plurality of narrowed portions provided along a periphery of the silicon thin membrane, and the piezoresistive portion is disposed in the narrowed portion.

4. The cleaning method according to claim 3 , wherein the support member is integrated with the silicon thin membrane.

5. The cleaning method according to claim 2 , wherein the current is flowed through the piezoresistive portion.

6. The cleaning method according to claim 2 , wherein the current is flowed through a region doped more heavily than surroundings thereof, the region being provided on a surface of the silicon thin membrane.

Assignees

• Nat Inst Materials Science

Inventors

• Yoshikawa Genki
• Nemoto Takahiro
• NAKATSU Makito
• Takeda Naoto
• SHIBA Kota
• Minami Kosuke

Classifications

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• G01L1/26 Primary

  Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload · CPC title

• B08B7/005

  by infrared radiation · CPC title

• B08B7/0071 Primary

  by heating (B08B7/0035 takes precedence) · CPC title

• G01L1/2268

  Arrangements for correcting or for compensating unwanted effects · CPC title