High-sensitivity sensor having crack-containing transparent conductive thin film and method for preparing same

US11796403B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11796403-B2
Application numberUS-201716305179-A
CountryUS
Kind codeB2
Filing dateMay 24, 2017
Priority dateMay 30, 2016
Publication dateOct 24, 2023
Grant dateOct 24, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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Provided is a highly sensitive sensor comprising a cracked transparent conductive thin film. The highly sensitive sensor relates to a sensor which is acquired by means of forming a fine crack in a transparent conductive thin film formed on a substrate and is for measuring external tension and pressure by means of measuring the change of electrical resistance due to changes, shorting or opening in a fine interconnection structure formed by the fine crack. Such highly sensitive transparent conductive crack sensor can be applied to high-precision measurement or an artificial skin, can also be utilized as a positioning detecting sensor by means of pixelating the sensor, and can be utilized in fields of precise measurements, biometric devices used on the human skin and the like, human motion measurement sensors, display panel sensors and the like.

First claim

Opening claim text (preview).

The invention claimed is: 1. A transparent highly sensitive sensor, which comprises: a transparent substrate; and a transparent conductive thin film formed on at least one side of the substrate, wherein the transparent conductive thin film is in an amorphous state and has a thickness in the range of 450 nm to 1 μm, wherein the transparent conductive thin film comprises a crack with crack faces facing each other and at least some of the faces contacting each other, wherein the sensor measures an external stimulus by measuring an electrical change caused by a change of contact area or short or re-contact as the crack faces move according to the external stimulus. 2. The transparent highly sensitive sensor according to claim 1 , wherein Young's modulus of the substrate is lower than Young's modulus of the transparent conductive thin film. 3. The transparent highly sensitive sensor according to claim 2 , wherein the substrate is any one selected from the group consisting of polyethylene terephthalate (PET), polypropylene (PP) and polyethylene (PE), or a combination thereof. 4. The transparent highly sensitive sensor according to claim 1 , wherein the transparent conductive thin film is any one selected from the group consisting of ZnO, ZnO:B, ZnO:Al, ZnO:H, SnO, SnO 2 , SnO 2 :F, ITO and fluorinated SnO (FTO), or a combination thereof. 5. The transparent highly sensitive sensor according to claim 1 , wherein the crack is formed by difference in Young's modulus between the substrate and the transparent conductive thin film. 6. The transparent highly sensitive sensor according to claim 5 , wherein the crack is a nano-level fine crack. 7. The transparent highly sensitive sensor according to claim 1 , wherein electrical resistance value of the conductive thin film is changed due to electrical short or opening of the crack caused by the external stimulus. 8. The transparent highly sensitive sensor according to claim 7 , wherein the external stimulus is any one of tension and pressure, or a combination thereof. 9. The transparent highly sensitive sensor according to claim 1 wherein the substrate has a Young's modulus from about 3 GPa to about 5 GPa and the transparent conductive thin film has a Young's modulus from about 100 GPa to about 120 GPa. 10. The transparent highly sensitive sensor according to claim 1 , wherein gauge factor of the transparent highly sensitive sensor is 1 to 1×10 5 . 11. The transparent highly sensitive sensor according to claim 1 , wherein the highly sensitive sensor has flexibility of 1 mm radius or more and transmittance of 80% or higher. 12. A pressure sensor comprising the transparent highly sensitive sensor according to claim 1 . 13. A tension sensor comprising the transparent highly sensitive sensor according to claim 1 . 14. An artificial skin comprising the transparent highly sensitive sensor according to claim 1 . 15. A transparent display panel comprising the transparent highly sensitive sensor according to claim 1 . 16. A process for preparing the transparent highly sensitive sensor of claim 1 , which comprises the following steps of: forming a transparent conductive thin film on at least one side of the substrate; and inducing a crack on the conductive thin film. 17. The process according to claim 16 wherein Young's modulus of the substrate is lower than Young's modulus of the transparent conductive thin film by about 95 GPa to about 120 GPa. 18. The process according to claim 16 wherein inducing a crack is performed by stretching or bending. 19. The process according to claim 16 further comprising pixelating the transparent highly sensitive sensor to form a transparent position detecting sensor.

Assignees

Inventors

Classifications

  • G01L1/2287Primary

    constructional details of the strain gauges (adjustable resistors H01C10/00) · CPC title

  • of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

  • Sputtering · CPC title

  • H01B3/441Primary

    from alkenes · CPC title

  • comprising conductive layers or films on insulating-supports · CPC title

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What does patent US11796403B2 cover?
Provided is a highly sensitive sensor comprising a cracked transparent conductive thin film. The highly sensitive sensor relates to a sensor which is acquired by means of forming a fine crack in a transparent conductive thin film formed on a substrate and is for measuring external tension and pressure by means of measuring the change of electrical resistance due to changes, shorting or opening …
Who is the assignee on this patent?
Seoul Nat Univ R&Db Foundation
What technology area does this patent fall under?
Primary CPC classification G01L1/2287. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).