Silicon-containing product forming apparatus

Patent metadata

Field	Value
Publication number	US-11795543-B2
Application number	US-202016751354-A
Country	US
Kind code	B2
Filing date	Jan 24, 2020
Priority date	Jan 25, 2019
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

According to one embodiment, a silicon-containing product forming apparatus includes a reaction chamber, an emission path, a process liquid tank, a supplier, and a flow path switcher. The emission path emits an emission material from the reaction chamber. The supplier includes a supply line configured to supply a process liquid to the emission path from the process liquid tank, and a byproduct generated by reaction is treated in the emission path by the supplied process liquid. The flow path switcher switches the communication state of the emission path with each of the reaction chamber and the supply line of the supplier.

First claim

What is claimed is:

1. A silicon-containing product forming apparatus, comprising:
a reaction chamber in which a raw material including silicon and a halogen element is reacted, or a raw material including silicon and a raw material including a halogen element are reacted;
an emission path configured to emit an emission material from the reaction chamber, the emission path being incorporated in an emitter, the emission path including a first extension, and the emission material from the reaction chamber being emitted toward a downstream side in the first extension;
a process liquid tank storing a process liquid including a basic aqueous solution;
a supplier including a supply line configured to supply the emission path with the process liquid from the process liquid tank, the supplier being configured to treat a byproduct generated by reaction, with the supplied process liquid in the emission path;
an exhauster including an exhaust line configured to exhaust a gas generated by reaction between the process liquid and the byproduct from the first extension of the emission path; and
a first flow path switcher which is disposed between the first extension and the reaction chamber in the emission path, and to which the supply line of the supplier and the exhaust line of the exhauster are connected, the first flow path switcher being switchable between a first operation state and a second operation state, the first extension of the emission path communicating with the reaction chamber and communication of the first extension with the supply line and the exhaust line being blocked in the first operation state of the first flow path switcher, and the first extension communicating with the supply line and the exhaust line and communication of the first extension with the reaction chamber being blocked in the second operation state of the first flow path switcher.

2. The silicon-containing product forming apparatus according to claim 1 , wherein a joint portion of the exhaust line of the exhauster to the first extension of the emission path is situated in a vertically upper site in the first extension of the emission path.

3. The silicon-containing product forming apparatus according to claim 1 , further comprising:
a liquid emitter including a liquid emission line configured to emit the process liquid having reacted with the byproduct in the first extension of the emission path from the first extension of the emission path; and
a second flow path switcher which switches a communication state of the first extension of the emission path with the liquid emission line of the liquid emitter.

4. The silicon-containing product forming apparatus according to claim 1 , further comprising a pressure control valve disposed in the first extension of the emission path, wherein
the pressure control valve is configured to increase a pressure of the first extension of the emission path in a region on a side opposite to the reaction chamber with respect to the pressure control valve, compared with a region on the reaction chamber side with respect to the pressure control valve in a state that reaction using the raw material is conducted in the reaction chamber, and
the process liquid supplied to the first extension of the emission path is injected from the supply line of the supplier toward the pressure control valve or a neighborhood of the pressure control valve in the first extension.

5. The silicon-containing product forming apparatus according to claim 1 , wherein the process liquid supplied to the first extension of the emission path is injected from the supply line of the supplier to the first extension at an injection pressure of 0.1 Pa or more.

6. The silicon-containing product forming apparatus according to claim 1 , wherein
the emission path includes a second extension which extends in parallel with the first extension, and which is capable of communicating with the reaction chamber that is identical for the first extension, and
the first flow path switcher switches a communication state of the second extension with each of the reaction chamber, the supply line of the supplier, and the exhaust line of the exhauster.

7. The silicon-containing product forming apparatus according to claim 6 , wherein
in the first operation state of the first flow path switcher, the second extension communicates with the supply line of the supplier and the exhaust line of the exhauster and communication of the second extension with the reaction chamber is blocked, and
in the second operation state of the first flow path switcher, the second extension communicates with the reaction chamber and communication of the second extension with the supply line and the exhaust line is blocked.

8. The silicon-containing product forming apparatus according to claim 1 , further comprising a sensor configured to detect a parameter relating to a state of progress of reaction between the process liquid and the byproduct in the first extension of the emission path.

Assignees

• Toshiba Kk
• Kioxia Corp

Inventors

• Uchida Kenya
• Fukui Hiroyuki
• Uematsu Ikuo

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• C23C16/4412 Primary

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• B01D53/68

  Halogens or halogen compounds · CPC title

• B01D53/79

  Injecting reactants · CPC title