Copper alloy plate, copper alloy plate with plating film, and manufacturing method thereof

US11795525B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11795525-B2
Application numberUS-202017438954-A
CountryUS
Kind codeB2
Filing dateMar 25, 2020
Priority dateMar 29, 2019
Publication dateOct 24, 2023
Grant dateOct 24, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

First claim

Opening claim text (preview).

The invention claimed is: 1. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, wherein a surface Mg concentration at a surface is 0% or more and 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less. 2. The copper alloy plate according to claim 1 wherein a thickness of the surface layer portion is 0 μm or more and 9 μm or less. 3. The copper alloy plate according to claim 1 , wherein P is contained 0.001% by mass or more and 0.2% by mass or less. 4. A copper alloy plate with a plating film comprising a copper alloy plate containing more than 1.2% by mass and 2% by mass or less of Mg in a center portion of a plate thickness direction and the balance of Cu and inevitable impurities, and a plating film formed on a surface layer portion of the copper alloy plate, wherein a surface Mg concentration at a surface of the copper alloy plate is 30% or less of a center Mg concentration at the center portion of the plate thickness direction, and the surface layer portion has a concentration gradient where a Mg concentration increases from the surface toward the center portion of the plate thickness direction with 0.2% by mass/μm or more and 50% by mass/μm or less, and has a depth from the surface to where the Mg concentration is 90% of the center Mg concentration. 5. The copper alloy plate with a plating film according to claim 4 , wherein an average concentration of Mg in the plating film is 10% or less of the center Mg concentration. 6. The copper alloy plate with a plating film according to claim 4 , wherein the plating film is formed from one or more layer selected from tin, copper, zinc, nickel, gold, silver, and palladium and alloys thereof. 7. The copper alloy plate with a plating film according to claim 4 , wherein a thickness of the surface layer portion is 9 μm or less. 8. The copper alloy plate with a plating film according to claim 4 , wherein the copper alloy plate contains P of 0.001% by mass or more and 0.2% by mass or less. 9. A manufacturing method of a copper alloy plate comprising an Mg enrichment treatment forming a surface portion in which Mg is concentrated by diffusing and concentrating Mg on a surface of a copper alloy plate, and a surface portion removal treatment forming a surface layer portion by removing the surface portion, wherein the copper alloy plate after the Mg enrichment treatment and the surface portion removal treatment contains Mg more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities at a center portion of a plate thickness direction; a surface Mg concentration at a surface of the surface layer portion is 30% or less of a center Mg concentration at the center portion of the plate thickness direction; and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less, and the surface layer portion has a depth from the surface to where a Mg concentration is 90% of the center Mg concentration. 10. The manufacturing method of a copper alloy plate according to claim 9 wherein a thickness of the surface layer portion is 9 μm or less. 11. The manufacturing method of a copper alloy plate according to claim 9 , wherein the copper alloy plate containing 0.001% by mass or more and 0.2% by mass or less of P. 12. A method of forming the copper alloy plate with a plating film according to claim 4 , wherein the plating film is formed on the copper alloy plate by an electrolytic plating treatment with a current density of 0.1 A/dm 2 or more and 60 A/dm 2 or less. 13. The method of forming a copper alloy plate with a plating film according to claim 12 , wherein the plating film contains tin; and after the electrolytic plating treatment, a reflow treatment is performed at 230° C. or more and 330° C. or less of heating peak temperature, for 0.5 seconds or more and 30 seconds or less of heating time at the heating peak temperature.

Assignees

Inventors

Classifications

  • C22C9/00Primary

    Alloys based on copper · CPC title

  • one layer being formed of a noble metal or a noble metal alloy · CPC title

  • comprising aluminium or copper {(B32B15/016 and B32B15/017 take precedence)} · CPC title

  • Pretreatment of metallic surfaces to be electroplated · CPC title

  • by heat-treatment · CPC title

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What does patent US11795525B2 cover?
To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center …
Who is the assignee on this patent?
Mitsubishi Materials Corp
What technology area does this patent fall under?
Primary CPC classification C22C9/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).