Copper alloy sheet, copper alloy sheet with plating film, and method for producing same
US-2023047984-A1 · Feb 16, 2023 · US
US11795525B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11795525-B2 |
| Application number | US-202017438954-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 25, 2020 |
| Priority date | Mar 29, 2019 |
| Publication date | Oct 24, 2023 |
| Grant date | Oct 24, 2023 |
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To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.
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The invention claimed is: 1. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, wherein a surface Mg concentration at a surface is 0% or more and 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less. 2. The copper alloy plate according to claim 1 wherein a thickness of the surface layer portion is 0 μm or more and 9 μm or less. 3. The copper alloy plate according to claim 1 , wherein P is contained 0.001% by mass or more and 0.2% by mass or less. 4. A copper alloy plate with a plating film comprising a copper alloy plate containing more than 1.2% by mass and 2% by mass or less of Mg in a center portion of a plate thickness direction and the balance of Cu and inevitable impurities, and a plating film formed on a surface layer portion of the copper alloy plate, wherein a surface Mg concentration at a surface of the copper alloy plate is 30% or less of a center Mg concentration at the center portion of the plate thickness direction, and the surface layer portion has a concentration gradient where a Mg concentration increases from the surface toward the center portion of the plate thickness direction with 0.2% by mass/μm or more and 50% by mass/μm or less, and has a depth from the surface to where the Mg concentration is 90% of the center Mg concentration. 5. The copper alloy plate with a plating film according to claim 4 , wherein an average concentration of Mg in the plating film is 10% or less of the center Mg concentration. 6. The copper alloy plate with a plating film according to claim 4 , wherein the plating film is formed from one or more layer selected from tin, copper, zinc, nickel, gold, silver, and palladium and alloys thereof. 7. The copper alloy plate with a plating film according to claim 4 , wherein a thickness of the surface layer portion is 9 μm or less. 8. The copper alloy plate with a plating film according to claim 4 , wherein the copper alloy plate contains P of 0.001% by mass or more and 0.2% by mass or less. 9. A manufacturing method of a copper alloy plate comprising an Mg enrichment treatment forming a surface portion in which Mg is concentrated by diffusing and concentrating Mg on a surface of a copper alloy plate, and a surface portion removal treatment forming a surface layer portion by removing the surface portion, wherein the copper alloy plate after the Mg enrichment treatment and the surface portion removal treatment contains Mg more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities at a center portion of a plate thickness direction; a surface Mg concentration at a surface of the surface layer portion is 30% or less of a center Mg concentration at the center portion of the plate thickness direction; and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less, and the surface layer portion has a depth from the surface to where a Mg concentration is 90% of the center Mg concentration. 10. The manufacturing method of a copper alloy plate according to claim 9 wherein a thickness of the surface layer portion is 9 μm or less. 11. The manufacturing method of a copper alloy plate according to claim 9 , wherein the copper alloy plate containing 0.001% by mass or more and 0.2% by mass or less of P. 12. A method of forming the copper alloy plate with a plating film according to claim 4 , wherein the plating film is formed on the copper alloy plate by an electrolytic plating treatment with a current density of 0.1 A/dm 2 or more and 60 A/dm 2 or less. 13. The method of forming a copper alloy plate with a plating film according to claim 12 , wherein the plating film contains tin; and after the electrolytic plating treatment, a reflow treatment is performed at 230° C. or more and 330° C. or less of heating peak temperature, for 0.5 seconds or more and 30 seconds or less of heating time at the heating peak temperature.
Alloys based on copper · CPC title
one layer being formed of a noble metal or a noble metal alloy · CPC title
comprising aluminium or copper {(B32B15/016 and B32B15/017 take precedence)} · CPC title
Pretreatment of metallic surfaces to be electroplated · CPC title
by heat-treatment · CPC title
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