Cadmium-free quantum dot, quantum dot-polymer composite, and electronic device including the same

US11795392B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11795392-B2
Application numberUS-202117234845-A
CountryUS
Kind codeB2
Filing dateApr 20, 2021
Priority dateApr 20, 2020
Publication dateOct 24, 2023
Grant dateOct 24, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.

First claim

Opening claim text (preview).

What is claimed is: 1. A quantum dot, comprising a core comprising a first semiconductor nanocrystal comprising indium and phosphorus, a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus, a first shell disposed between the core and the light emitting layer, the first shell comprising a semiconductor nanocrystal comprising zinc, and selenium, and a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not comprise cadmium, and the quantum dot is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers. 2. The quantum dot of claim 1 , wherein the core has a size of about 1.5 nanometers to about 3 nanometers. 3. The quantum dot of claim 1 , wherein the light emitting layer has a thickness of less than or equal to about 0.5 nanometers. 4. The quantum dot of claim 1 , wherein the first shell has a thickness of about 0.3 nanometers to about 1.2 nanometers. 5. The quantum dot of claim 1 , wherein the second shell has a thickness of greater than or equal to about 0.3 nanometers. 6. The quantum dot of claim 1 , wherein the first shell of the quantum dot is disposed directly on the core, and the first shell of the quantum dot comprises a first layer comprising a third semiconductor nanocrystal, and a second layer disposed on the first layer, the second layer comprising a fourth semiconductor nanocrystal, wherein the third semiconductor nanocrystal and the fourth semiconductor nanocrystal have different compositions. 7. The quantum dot of claim 6 , wherein the first layer of the first shell has a thickness of about 0.1 nanometers to about 1.0 nanometers, and the second layer has a thickness of about 0.2 nanometers to about 1.1 nanometers. 8. The quantum dot of claim 1 , wherein the second shell comprises a first layer disposed directly on the light emitting layer, the first layer comprising a fifth semiconductor nanocrystal, and a second layer disposed on the first layer, the second layer comprising a sixth semiconductor nanocrystal, wherein the fifth semiconductor nanocrystal and the sixth semiconductor nanocrystal have different compositions. 9. The quantum dot of claim 8 , wherein the fifth semiconductor nanocrystal comprises zinc and selenium, and the sixth semiconductor nanocrystal comprises zinc and sulfur. 10. The quantum dot of claim 9 , wherein the sixth semiconductor nanocrystal does not comprise selenium. 11. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal further comprises zinc. 12. The quantum dot of claim 1 , wherein the quantum dot has a first absorption peak in the ultraviolet-visible absorption spectrum between about 390 nanometers and about 500 nanometers. 13. The quantum dot of claim 1 , wherein the light absorbance per particle of the quantum dot is greater than or equal to about 1.0E-17. 14. The quantum dot of claim 1 , wherein the quantum dot comprises RCOOH, RCOOCOR, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RPO(OH) 2 , R 2 POOH, wherein, R and R′ are independently a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C30 substituted or unsubstituted aromatic hydrocarbon group, or a combination thereof, or a combination thereof, on a surface thereof. 15. A quantum dot, comprising a core comprising a first semiconductor nanocrystal comprising indium and phosphorus, a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus, a first shell disposed between the core and the light emitting layer, the first shell being disposed directly on the core, the first shell of the quantum dot comprising a first layer comprising a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising zinc, and selenium, and a second layer disposed on the first layer, the second layer comprising a fourth semiconductor nanocrystal, the fourth semiconductor nanocrystal comprising zinc, and sulfur, and a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not comprise cadmium, and wherein the quantum dot is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers, and wherein the third semiconductor nanocrystal and the fourth semiconductor nanocrystal have different compositions. 16. The quantum dot of claim 15 , wherein the fourth semiconductor nanocrystal does not comprise selenium. 17. A quantum dot-polymer composite comprising a polymer matrix; and quantum dots of claim 1 dispersed in the polymer matrix. 18. The quantum dot-polymer composite of claim 17 , wherein the polymer matrix comprises a thiolene resin, a (meth)acrylate polymer, a urethane resin, an epoxy polymer, vinyl polymer, a silicone resin, or a combination thereof. 19. A display device comprising a light source and a luminescent element, wherein the luminescent element comprises the quantum dot-polymer composite of claim 17 , the light source is configured to provide the luminescent element, with incident light. 20. An electroluminescent device, comprising a first electrode and a second electrode facing each other; and a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer comprising a plurality of quantum dots, wherein each of the plurality of quantum dots comprises: a core comprising a first semiconductor nanocrystal comprising indium and phosphorus, a light emitting layer surrounding the core, the light emitting layer comprising a second semiconductor nanocrystal comprising indium and phosphorus, a first shell disposed between the core and the light emitting layer, the first shell comprising a semiconductor nanocrystal comprising zinc, and selenium, sulfur, or a combination thereof, and a second shell disposed on the light emitting layer, the second shell comprising a semiconductor nanocrystal comprising zinc, and selenium, sulfur, or a combination thereof, wherein the plurality of quantum dots do not comprise cadmium, and wherein the plurality of quantum dots are single light emitting quantum dots having an emission peak wavelength in a range of about 500 nanometers to about 550 nanometers.

Assignees

Inventors

Classifications

  • C09K11/883Primary

    with zinc or cadmium · CPC title

  • non-luminescent particle coatings or suspension media · CPC title

  • Arsenides; Nitrides; Phosphides · CPC title

  • provided by one optical element, or plurality thereof, placed on the light output side of the light guide · CPC title

  • comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

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What does patent US11795392B2 cover?
A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting l…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification C09K11/883. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).