Solid-state imaging element, reading device, image processing apparatus, and control method

Patent metadata

Field	Value
Publication number	US-11792539-B2
Application number	US-202117352379-A
Country	US
Kind code	B2
Filing date	Jun 21, 2021
Priority date	Jun 25, 2020
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

A solid-state imaging element includes a pixel section including a plurality of pixels that are arranged in a matrix and to perform photoelectric conversion, and circuitry to perform reading control on pixels in the pixel section, such that reading control is not performed on at least one pixel included in the pixel section.

First claim

The invention claimed is:

1. A solid-state imaging element comprising:
a pixel section including a plurality of pixels that are arranged in a matrix and configured to perform photoelectric conversion; and
circuitry configured to perform reading control on pixels in the pixel section,
wherein the circuitry is configured not to perform reading control on at least one pixel included in the pixel section by setting control signal lines of the at least one pixel to a predetermined constant level.

2. The solid-state imaging element according to claim 1 ,
wherein the pixel section includes a plurality of pixel groups provided with a plurality of color filters configured to transmit light in a plurality of different specific wavelength ranges, and
wherein the at least one pixel included in the pixel section on which the reading operation is not performed serves as a pixel group provided with a specific color filter among the plurality of pixel groups.

3. The solid-state imaging element according to claim 2 , wherein the specific color filter is a color filter configured to transmit light in a maximum wavelength band among the plurality of color filters for the plurality of pixel groups included in the pixel section.

4. The solid-state imaging element according to claim 2 , wherein the specific color filter is a color filter configured to transmit light in a near infrared region.

5. The solid-state imaging element according to claim 1 , wherein the circuitry discards a charge that is generated in the at least one pixel included in the pixel section on which the reading operation is not performed, to keep an output signal from a pixel group at a fixed level.

6. The solid-state imaging element according to claim 1 , further comprising:
at least one processing circuit configured to process a signal obtained from the pixel section,
wherein the circuitry is further configured to stop operation of the at least one processing circuit, so as not to perform processing of a signal obtained from the at least one pixel included in the pixel section.

7. The solid-state imaging element according to claim 1 , further comprising:
at least one processing circuit configured to process a signal obtained from the pixel section, so as not to perform processing of a signal obtained from the at least one pixel included in the pixel section.

8. The solid-state imaging element according to claim 7 , wherein the circuitry is configured to arbitrarily select control on the at least one pixel included in the pixel section and the at least one processing circuit configured to process the signal that is obtained from the at least one pixel included in the pixel section.

9. A reading device comprising:
a light source configured to emit light; and
the solid-state imaging element according to claim 1 .

10. An image processing apparatus comprising:
the reading device according to claim 9 ; and
an image forming section.

11. The solid-state imaging element according to claim 1 , wherein the at least one pixel is disposed in a different line of the matrix than the pixels on which the circuitry performs reading control.

12. The solid-state imaging element according to claim 1 , wherein the at least one pixel is disposed in a same line of the matrix as the pixels on which the circuitry performs reading control.

13. The solid-state imaging element according to claim 1 wherein the at least one pixel is configured to capture near infrared light.

14. The solid-state imaging element according to claim 13 , wherein the pixels on which the circuitry performs reading control are configured to capture visible light.

15. The solid-state imaging element according to claim 1 , wherein the control signal lines of the at least one pixel include a reset signal line.

16. The solid-state imaging element according to claim 15 , wherein the control signal lines of the at least one pixel include a charge transfer signal line.

17. The solid-state imaging element according to claim 15 , wherein the at least one pixel is in a reset state when the reset signal line is at the predetermined constant level.

18. The solid-state imaging element according to claim 1 , wherein the pixels section includes a plurality of lines, and each line including a different color filter to capture a different color.

19. A control method executable by a solid-state imaging element including a pixel section including a plurality of pixels that are arranged in a matrix and configured to perform photoelectric conversion, the method comprising:
performing reading control on pixels in the pixel section; and
not performing on at least one pixel included in the pixel section by setting control signal lines of the at least one pixel to a predetermined constant level.

Assignees

• Sakaguchi Shinji
• Nakazawa Masamoto
• Ricoh Co Ltd

Inventors

• Sakaguchi Shinji
• Nakazawa Masamoto

Classifications

• H04N25/78

  Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

• H04N25/42

  by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode · CPC title

• H04N25/00

  Circuitry of solid-state image sensors [SSIS]; Control thereof · CPC title

• H04N25/44 Primary

  by partially reading an SSIS array · CPC title

• H04N1/02805

  with photodetectors arranged in a two-dimensional array · CPC title