Dielectric thin film, capacitor including the dielectric thin film, and method for manufacturing the dielectric thin film

Patent metadata

Field	Value
Publication number	US-11791373-B2
Application number	US-202117306310-A
Country	US
Kind code	B2
Filing date	May 3, 2021
Priority date	Nov 24, 2020
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by R A M B O C where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3<B/A<1.7, and 9.0≤C<10.0.

First claim

What is claimed is:

1. A dielectric having a three-dimensional nanoscale shape, the dielectric comprising:
an oxide including a nanoscale three-dimensional (3D) perovskite-type crystal structure, the oxide represented by R A M B O C where R is a divalent element, M is a pentavalent element, 1.3<B/A<1.7, and 9.0≤C<10.0,
wherein the dielectric is electrically neutral, and
wherein the oxide is electrically neutral.

2. The dielectric of claim 1 , wherein, the divalent element comprises at least one of calcium (Ca), strontium (Sr), barium (Ba), or a combination thereof.

3. The dielectric of claim 1 , wherein, the pentavalent element comprises at least one of niobium (Nb), vanadium (V), tantalum (Ta), or a combination thereof.

4. The dielectric of claim 1 , wherein the oxide has a lattice constant of about 3.85 Å to about 3.95 Å.

5. The dielectric of claim 1 , wherein the oxide has a thickness of about 1.5 nm to about 1000 nm.

6. A capacitor comprising:
a first electrode;
a second electrode; and
the dielectric of claim 1 between the first electrode and the second electrode.

7. The capacitor of claim 6 , further comprising:
a seed layer between the second electrode and the oxide, the seed layer having a lattice misfit of 1% or less with respect to the oxide.

8. The capacitor of claim 6 , wherein the second electrode is a seed layer for the oxide, and the second electrode has a lattice misfit of about 1% or less with respect to the oxide.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyungjun
• Lee Changsoo
• Kwak Chan
• Do Euncheol

Classifications

• H10D1/692

  Electrodes · CPC title

• H10D1/682 Primary

  having dielectrics comprising perovskite structures · CPC title

• H10D1/694 Primary

  comprising noble metals or noble metal oxides · CPC title

• H10D1/684 Primary

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title