Photoacoustic sensor valve

US11788990B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11788990-B2
Application numberUS-202217647403-A
CountryUS
Kind codeB2
Filing dateJan 7, 2022
Priority dateApr 3, 2019
Publication dateOct 17, 2023
Grant dateOct 17, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A system for measuring gas concentration includes a package having a cavity and a port, a photoacoustic gas sensor device within the package, and a Micro Electro Mechanical System (“MEMS”) valve separate from the photoacoustic gas sensor device placed over the port of the package and to allow ambient gas diffusion into the cavity in a first mode of operation, and to prevent ambient gas diffusion into the cavity and to acoustically isolate the cavity in a second mode of operation.

First claim

Opening claim text (preview).

What is claimed is: 1. A Micro Electro Mechanical System (“MEMS”) valve comprising a first perforated backplate and a perforated membrane, wherein perforations in the first perforated backplate and perforations in the perforated membrane are non-overlapping in a plan view, and wherein the perforated membrane and the first perforated backplate are in an open configuration in a first mode of operation and in a closed configuration in a second mode of operation; and a second perforated backplate, and wherein the perforated membrane is between the first perforated backplate and the second perforated backplate. 2. The MEMS valve of claim 1 , wherein a gap length between the first perforated backplate and the perforated membrane is different from a gap length between the second perforated backplate and the perforated membrane. 3. The MEMS valve of claim 1 , wherein the first perforated backplate comprises a perforated insulated silicon layer, and wherein the perforated membrane comprises a perforated silicon layer. 4. The MEMS valve of claim 1 , further comprising a cantilevered silicon substrate under the first perforated backplate and the perforated membrane. 5. The MEMS valve of claim 1 , wherein the perforations in the first perforated backplate are arranged in a hexagonal or circular radial concentric pattern, and the perforations in the perforated membrane are arranged in a non-overlapping hexagonal or circular radial concentric pattern. 6. A PhotoAcoustic Sensor (“PAS”) valve comprising: a first membrane comprising an inner concentric pattern of perforations and an outer circular ring without perforations; and a second membrane comprising a circular inner portion without perforations, a first outer circular ring having a concentric pattern of perforations, and a second outer circular ring without perforations, wherein the inner concentric pattern of perforations of the first membrane and the concentric pattern of perforations of the second membrane are nonoverlaping in a plan view. 7. The PAS valve of claim 6 , wherein the first membrane comprises a rigid backplate and the second membrane comprises a flexible membrane. 8. The PAS valve of claim 6 , wherein the first membrane comprises a flexible membrane and the second membrane comprises a rigid backplate. 9. The PAS valve of claim 6 , wherein the inner concentric pattern of perforations of the first membrane comprises a circular radial concentric pattern of perforations. 10. The PAS valve of claim 6 , wherein the inner concentric pattern of perforations of the first membrane comprises a hexagonal radial concentric pattern of perforations. 11. The PAS valve of claim 6 , wherein the first membrane comprises a circular bumpring. 12. The PAS valve of claim 11 , wherein the circular bumpring is not in contact with the second membrane in a first mode of operation of the PAS valve. 13. The PAS valve of claim 12 , wherein the circular bumpring is in contact with the second membrane in a second mode of operation of the PAS valve. 14. A monolithic acoustic valve comprising: a perforated insulated silicon backplate coupled to a substrate; and a perforated silicon membrane coupled to the substrate, wherein perforations in the perforated insulated silicon backplate and non-overlapping perforations in the perforated silicon membrane comprise a radial pattern emanating from a center portion of the monolithic acoustic valve to a peripheral portion of the monolithic acoustic valve in a plan view, and wherein the radial pattern comprises an inner pattern and a non-overlapping outer ringed pattern. 15. The monolithic acoustic valve of claim 14 , further comprising an additional perforated insulated silicon backplate coupled to the substrate and adjacent to the perforated silicon membrane. 16. The monolithic acoustic valve of claim 14 , wherein the inner pattern comprises a circular or hexagonal pattern on the perforated insulated silicon backplate. 17. The monolithic acoustic valve of claim 14 , wherein the inner pattern comprises a circular or hexagonal pattern on the perforated silicon membrane. 18. The monolithic acoustic valve of claim 14 , wherein the perforated insulated silicon backplate comprises an insulated anti-sticking bump ring and/or a plurality of insulated anti-sticking bumps. 19. The monolithic acoustic valve of claim 14 , wherein the substrate comprises a cantilevered silicon substrate.

Assignees

Inventors

Classifications

  • optoacoustic fluid cells therefor · CPC title

  • in the gaseous state {(specially adapted for biological material G01N33/497; measuring breath flow A61B5/087)} · CPC title

  • with opto-acoustic detection, e.g. for gases or analysing solids · CPC title

  • Atmospheric sampling · CPC title

  • in gases · CPC title

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Frequently asked questions

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What does patent US11788990B2 cover?
A system for measuring gas concentration includes a package having a cavity and a port, a photoacoustic gas sensor device within the package, and a Micro Electro Mechanical System (“MEMS”) valve separate from the photoacoustic gas sensor device placed over the port of the package and to allow ambient gas diffusion into the cavity in a first mode of operation, and to prevent ambient gas diffusio…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification G01N29/2425. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).