Laser etching apparatus and laser etching method using the same

US11786990B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11786990-B2
Application numberUS-202016747490-A
CountryUS
Kind codeB2
Filing dateJan 20, 2020
Priority dateJan 21, 2019
Publication dateOct 17, 2023
Grant dateOct 17, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A laser etching apparatus includes a light source to emit a first laser beam having a first energy profile; and a scanner to radiate a second laser beam upon an object along a circular path, the second laser beam having a second energy profile different from the first energy profile.

First claim

Opening claim text (preview).

What is claimed is: 1. A laser etching apparatus comprising: a light source to emit a first laser beam having a first energy profile; a beam expander to expand the first laser beam to have a Gaussian-profile; a diffraction optical device to convert the expanded first laser beam having the Gaussian-profile to a second laser beam having a linear beam profile; and a scanner to radiate the second laser beam upon an object along a circular path, wherein the Gaussian profile has a strength of the beam concentrated at a center of the expanded first laser beam, and the linear beam profile has a strength of a beam which is substantially even and planarized overall of the second laser beam. 2. The laser etching apparatus of claim 1 , wherein the diffraction optical device is arranged between the light source and the scanner. 3. The laser etching apparatus of claim 2 , wherein the second laser beam emanates from the diffraction optical device and is rotatable in the circular path defined by the scanner. 4. The laser etching apparatus of claim 3 , wherein the second laser beam is rotatable along the circular path in a direction generally parallel with a radius of the circular trace. 5. The laser etching apparatus of claim 2 , wherein the second laser beam has a rectangular shaped cross section. 6. The laser etching apparatus of claim 2 , wherein the second laser beam has a trapezoidal shaped cross section. 7. The laser etching apparatus of claim 1 , wherein the circular path comprises an annular shape. 8. The laser etching apparatus of claim 1 , wherein the scanner comprises a light-transmitting lens, and a size of the laser beam varies with a numerical aperture of the light-transmitting lens. 9. The laser etching apparatus of claim 1 , wherein the scanner comprises a pair of wedge lenses configured to rotate in a path of the laser beam and define the circular path. 10. The laser etching apparatus of claim 1 , wherein the object comprises a display area of the display panel. 11. A laser etching method comprising the steps of: preparing and drilling a hole in a display panel, wherein the drilling of a hole comprises: emitting a first laser beam having a first enemy profile from a light source; expanding the first laser beam to have a Gaussian-profile; converting the expanded first laser beam having the Gaussian-profile to a second laser beam having a linear beam profile; and radiating the second laser beam upon the display panel along a circular path by a scanner, wherein the Gaussian profile has a strength of the beam concentrated at a center of the expanded first laser beam, and the linear beam profile has a strength of a beam which is substantially even and planarized overall of the second laser beam. 12. The method of claim 11 , wherein the second laser beam, the second laser beam has the linear beam profile defined by a diffraction optical device. 13. The method of claim 12 , wherein the second laser beam is rotated in the circular path defined by the scanner. 14. The method of claim 13 , wherein the second laser beam is rotated along the circular path in a direction substantially parallel with a radius of the circular path. 15. The method of claim 12 , wherein the second laser beam has a rectangular shape cross section. 16. The method of claim 12 , wherein the second laser beam has a trapezoidal shape cross section. 17. The method of claim 11 , wherein the circular path comprises an annular path. 18. The method of claim 11 , wherein the scanner comprises a light-transmitting lens, and the size of the laser beam is adjusted by using a numerical aperture of the light-transmitting lens. 19. The method of claim 11 , wherein the scanner comprises a pair of wedge lenses configured to rotate in a path of the laser beam, and the circular path is defined by rotating the pair of wedge lenses. 20. The method of claim 11 , wherein the hole is drilled in a display area of the display panel.

Assignees

Inventors

Classifications

  • by a combination of beams · CPC title

  • comprising lenses · CPC title

  • into a rectangular shape · CPC title

  • Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head · CPC title

  • Laser etching · CPC title

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Frequently asked questions

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What does patent US11786990B2 cover?
A laser etching apparatus includes a light source to emit a first laser beam having a first energy profile; and a scanner to radiate a second laser beam upon an object along a circular path, the second laser beam having a second energy profile different from the first energy profile.
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification B23K26/0604. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Oct 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).