Piezoelectric device

Patent metadata

Field	Value
Publication number	US-11784629-B2
Application number	US-202117161727-A
Country	US
Kind code	B2
Filing date	Jan 29, 2021
Priority date	Jul 30, 2018
Publication date	Oct 10, 2023
Grant date	Oct 10, 2023

Abstract

A piezoelectric device includes a membrane portion and a piezoelectric layer made of single crystal of a piezoelectric body. At least a portion of the piezoelectric layer is included in the membrane portion. An electrode is provided on a surface of the piezoelectric layer in the membrane portion. The piezoelectric layer includes a first polarization region in a first polarization state and a second polarization region in a second polarization state, and the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.

First claim

What is claimed is:

1. A piezoelectric device comprising:
a membrane portion; and
a piezoelectric layer; wherein
at least a portion of the piezoelectric layer is included in the membrane portion;
an electrode is provided on a surface of the piezoelectric layer in the membrane portion;
the piezoelectric layer is a single layer that includes a first polarization region in a first polarization state and a second polarization region in a second polarization state; and
the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.

2. The piezoelectric device according to claim 1 , wherein directions of polarization in the first polarization state and the second polarization state are opposite to each other.

3. The piezoelectric device according to claim 1 , wherein the first polarization region and the second polarization region are spaced apart from each other in the thickness direction of the piezoelectric layer and an interface between the first polarization region and the second polarization region is close to the electrode.

4. The piezoelectric device according to claim 1 , wherein the piezoelectric body is LiTaO 3 or LiNbO 3 .

5. The piezoelectric device according to claim 1 , wherein the membrane portion is structured to perform flexural vibration.

6. The piezoelectric device according to claim 1 , wherein the membrane portion utilizes a plate wave or a bulk wave.

7. The piezoelectric device according to claim 5 , wherein the membrane portion includes a supporting film covering one surface of the piezoelectric layer, and the supporting film and the piezoelectric layer integrally vibrate in the membrane portion.

8. The piezoelectric device according to claim 7 , wherein the first polarization region and the second polarization region are spaced apart from each other in the thickness direction and a boundary between the first polarization region and the second polarization region is closer to the one surface of the piezoelectric layer covered by the supporting film than to another surface of the piezoelectric layer opposite to the one surface in the thickness direction inside the piezoelectric layer included in the membrane portion.

9. The piezoelectric device according to claim 1 , wherein the first polarization region and the second polarization region are provided in a same piezoelectric layer.

10. The piezoelectric device according to claim 1 , wherein the piezoelectric layer is made of a single crystal of a piezoelectric body.

11. The piezoelectric device according to claim 1 , further comprising a third polarization region spaced apart from the first and second polarization regions in the thickness direction or the in-plane direction.

12. The piezoelectric device according to claim 3 , wherein the interface is on a same or substantially on a same plane.

13. The piezoelectric device according to claim 1 , further comprising a substrate on which the piezoelectric layer is disposed.

14. The piezoelectric device according to claim 1 , wherein
the substrate includes a thin portion and a thick portion; and
the membrane portion includes the thin portion.

15. The piezoelectric device according to claim 14 , wherein the thin portion is surrounded by the thick portion.

16. The piezoelectric device according to claim 13 , further comprising an intermediate layer between the substrate and the piezoelectric layer.

17. The piezoelectric device according to claim 16 , wherein the intermediate layer is made of SiO 2 .

18. The piezoelectric device according to claim 1 , wherein the membrane portion has a circular or substantially circular shape.

Assignees

• Murata Manufacturing Co

Inventors

• Kishimoto Yutaka
• Ikeuchi Shinsuke
• Fujimoto Katsumi
• Kimura Tetsuya
• Kurokawa Fumiya

Classifications

• H03H9/174 Primary

  Membranes · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/02031

  consisting of ceramic · CPC title

• H03H9/02228

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H9/13

  for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title