Micro light-emitting display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11776988-B2
Application number	US-202117227981-A
Country	US
Kind code	B2
Filing date	Apr 12, 2021
Priority date	Oct 5, 2020
Publication date	Oct 3, 2023
Grant date	Oct 3, 2023

Abstract

A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

First claim

What is claimed is:

1. A micro light-emitting display apparatus comprising:
a first semiconductor layer;
an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light;
a first light-emitting unit comprising a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, the first active layer having a quantum well structure provided directly on the first semiconductor layer; and
a second light-emitting unit comprising a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer,
wherein the first active layer is configured to emit blue light and the second active layer is configured to emit green light.

2. The micro light-emitting display apparatus of claim 1 , wherein the rod semiconductor layer comprises:
a first portion having a constant width viewed along a height direction and a second portion where the width changes viewed along the height direction, wherein the second portion comprises a first inclined surface, a second inclined surface facing the first inclined surface, and an upper surface between the first inclined surface and the second inclined surface.

3. The micro light-emitting display apparatus of claim 2 , wherein an angle between a surface extending from the first inclined surface and the upper surface ranges from about 47 degrees to about 57 degrees.

4. The micro light-emitting display apparatus of claim 2 , wherein the rod semiconductor layer includes a same material as the first semiconductor layer.

5. The micro light-emitting display apparatus of claim 2 , wherein a width D 1 of the upper surface satisfies the following equation: D 1 =D−2×(h 1 /tan β), where h 1 is a height of the second portion, β is an angle between the surface extending from the first inclined surface and the upper surface and D is a width of the first portion.

6. The micro light-emitting display apparatus of claim 2 , wherein an aspect ratio (H/D) of the first portion satisfies 0.05<H/D<20, where H is a height of the first portion and D is a width of the first portion.

7. The micro light-emitting display apparatus of claim 6 , wherein the height H of the first portion satisfies 0.5 μm<H<20 μm.

8. The micro light-emitting display apparatus of claim 6 , wherein the width D of the first portion satisfies 0.05 μm<D<2 μm.

9. The micro light-emitting display apparatus of claim 5 , wherein the height h 1 of the second portion is about 100 nm or less.

10. The micro light-emitting display apparatus of claim 1 , further comprising a third light-emitting unit configured to emit red light.

11. The micro light-emitting display apparatus of claim 10 , wherein the third light-emitting unit comprises a plurality of nanorod semiconductor layers arranged apart from each other on the first semiconductor layer, a third active layer, among a plurality of third active layers, provided on each of the plurality of nanorod semiconductor layers, and a fourth semiconductor layer, among a plurality of fourth semiconductor layer, provided on each of the third active layers.

12. The micro light-emitting display apparatus of claim 11 , wherein each of the nanorod semiconductor layers and each of the third active layers have a width in a range of about 10 nm to about 100 nm.

13. The micro light-emitting display apparatus of claim 11 , wherein a pitch between the nanorod semiconductor layers is in a range of about 20 nm to about 300 nm.

14. The micro light-emitting display apparatus of claim 11 , wherein each of the nanorod semiconductor layers include an inclined surface and a flat surface.

15. The micro light-emitting display apparatus of claim 1 , further comprising fourth light-emitting unit configured to emit blue light, and a color conversion layer configured to convert the blue light emitted from the fourth light-emitting unit into red light.

16. The micro light-emitting display apparatus of claim 1 , wherein the isolation structure comprises an ion implantation area.

17. A micro light-emitting display apparatus comprising:
a first semiconductor layer;
an isolation structure provided on the first semiconductor layer;
a first light-emitting unit provided on an upper surface of the first semiconductor to form a first sub-pixel, the first light-emitting unit including a first active layer and a second semiconductor layer provided on the first active layer, the first active layer having a quantum well structure provided directly on the first semiconductor layer;
a second light-emitting unit provided in a first area of the isolation structure to form a second sub-pixel, the second light-emitting unit including a rod semiconductor layer, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer,
wherein the first active layer is configured to emit first light and the second active layer is configured to emit second light.

18. The micro light-emitting display apparatus of claim 17 , further comprising:
a third light-emitting unit provided in a second area of the isolation structure to form a third sub-pixel, the third light-emitting unit including a plurality of nanorod semiconductor layers, a third active layer, among a plurality of third active layers, provided on each of the plurality of nanorod semiconductor layers, and a fourth semiconductor layer, among a plurality of fourth active layers, provided on each of the third active layers,
wherein the third active layer is configured to emit third light.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Junhee
• Kong Kiho
• Kim Nakhyun
• Kim Dongho
• Park Junghun
• Park Jinjoo
• Lee Eunsung
• Han Joohun

Classifications

• H10D86/40

  characterised by multiple TFTs · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H29/142 Primary

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title