P active materials for organic photoelectric conversion layers in organic photodiodes

Patent metadata

Field	Value
Publication number	US-11770974-B2
Application number	US-201816756745-A
Country	US
Kind code	B2
Filing date	Oct 22, 2018
Priority date	Oct 23, 2017
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

The present disclosure relates to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis.

First claim

The invention claimed is:

1. A transparent p-type material, comprising:
a thiophene-based material comprising BDT3,

BDT3.

2. A p:n heterojunction, comprising:
the transparent p-type material of claim 1 ; and
an n-type material and/or a second p-type material.

3. A p:n1:n2 heterojunction, comprising:
the transparent p-type material of claim 1 ; and
an n-type material and/or a second p-type material.

4. The p:n heterojunction according to claim 2 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

5. The p:n1:n2 heterojunction according to claim 3 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

6. An absorption layer, comprising:
the transparent p-type material of claim 1 ; and
an n-type material and/or a second p-type material.

7. A photoelectric conversion layer, comprising:
the transparent p-type material of claim 1 ; and
an n-type material and/or a second p-type material.

8. An organic and/or hybrid module for optoelectronic application, comprising:
the transparent p-type material of claim 1 ; and
an n-type material and/or a second p-type material.

9. The absorption layer according to claim 6 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

10. The photoelectric conversion layer according to claim 7 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

11. The organic and/or hybrid module according to claim 8 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

12. A device, comprising:
the transparent p-type material of claim 1 .

13. A device, comprising:
the photoelectric conversion layer of claim 7 .

14. The device according to claim 13 , wherein the photoelectric conversion layer exhibits photo response in a visible absorption range, and/or the device is an organic image sensor, a hybrid image sensor, photodiode, organic photovoltaics, an organic light-emitting diode, an organic thin-film transistor.

15. The device according to claim 12 , further comprising:
an n-type material and/or a second p-type material.

16. The device of claim 15 , wherein the n-type and/or second p-type material exhibits absorption in a visible wavelength range.

17. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 7 ;
an electrode; and
a substrate.

18. The organic image sensor according to claim 17 , further comprising:
a second electrode on the photoelectric conversion layer.

19. A hybrid silicon-organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 7 ;
metal wiring;
a CMOS substrate; and
an insulating layer.

20. The hybrid silicon-organic image sensor according to claim 19 , further comprising:
a Si based photoelectric conversion unit.

21. The hybrid silicon-organic image sensor according to claim 19 , wherein the organic photoelectric conversion unit comprises an n-type material layer, a p-type material layer, an n-buffer layer and/or a p-buffer layer.

22. The hybrid silicon-organic image sensor according to claim 20 , wherein the organic photoelectric conversion unit comprises an n-type material layer, a p-type material layer, an n-buffer layer and/or a p-buffer layer.

23. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 7 ;
metal wiring;
a CMOS substrate; and
an insulating layer.

24. The organic image sensor according to claim 23 , further comprising:
a Si based photoelectric conversion unit.

25. The organic image sensor according to claim 24 , wherein the organic photoelectric conversion unit comprises an n-type material layer, a p-type material layer, an n-buffer layer and/or a p-buffer layer.

26. The organic image sensor according to claim 17 , wherein the organic photoelectric conversion unit comprises an n-type material layer, a p-type material layer, an n-buffer layer and/or a p-buffer layer.

27. The organic image sensor according to claim 18 , wherein the organic photoelectric conversion unit comprises an n-type material layer, a p-type material layer, an n-buffer layer and/or a p-buffer layer.

Assignees

• Sony Corp

Inventors

• Rosselli Silvia
• Knorr Nikolaus
• Roberts Anthony
• Miteva Tzenka
• Nelles Gabriele
• Deichmann Vitor
• Danner David
• Ford William E
• Chercka Dennis
• Yakutkin Vladimir
• Scheller Lars Peter

Classifications

• H10K85/6576 Primary

  comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene · CPC title

• C07D495/04

  Ortho-condensed systems · CPC title

• H10K85/615

  Polycyclic condensed aromatic hydrocarbons, e.g. anthracene · CPC title

• H10K19/20

  comprising components having an active region that includes an inorganic semiconductor · CPC title

• H10K30/30

  comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title