Solid state lighting devices with dielectric insulation and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-11769854-B2
Application number	US-202217568877-A
Country	US
Kind code	B2
Filing date	Jan 5, 2022
Priority date	Aug 9, 2010
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

First claim

I claim:

1. A semiconductor lighting device, comprising:
a first semiconductor material;
a second semiconductor material;
an active region disposed between the first and second semiconductor materials;
a V-shaped indentation defined by sidewalls and extending at least partially through the active region and the first semiconductor material;
a conductive material over and in contact with the second semiconductor material; and
an insulating material in the indentation and electrically insulating (1) at least a portion of the first semiconductor material from the second semiconductor material and/or (2) the conductive material from at least one of the active region and the first semiconductor material.

2. The semiconductor lighting device of claim 1 , wherein:
the sidewalls are surrounded by at least one of the first semiconductor material, the second semiconductor material, and the active region; and
the indentation has the sidewalls extending from a surface of the second semiconductor material into the active region.

3. The semiconductor lighting device of claim 2 , wherein the conductive material includes an electrical contact on the surface of the second semiconductor material and on the insulating material.

4. The semiconductor lighting device of claim 2 , wherein the surface of the second semiconductor material faces away from the active region.

5. The semiconductor lighting device of claim 2 , wherein the insulating material is interposed between the conductive material and the active region and between the conductive material and the first semiconductor material.

6. The semiconductor lighting device of claim 1 , wherein the conductive material includes (a) a first conductive portion over the second semiconductor material and (b) a second conductive portion between the sidewalls of the indentation and below an upper surface of the insulating material.

7. The semiconductor lighting device of claim 1 , wherein the active region includes at least one of an indium gallium nitride single quantum well, gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and an InGaN bulk material.

8. The semiconductor lighting device of claim 1 , wherein the conductive material is different from the first and second semiconductor materials.

9. The semiconductor lighting device of claim 1 , wherein the second semiconductor material includes a first portion in contact with a topmost surface of the active region and a second portion between the side walls of the indentation and separated from the active region.

10. A solid state lighting device, comprising:
a first semiconductor;
a second semiconductor;
an active region disposed between the first and second semiconductors;
a V-shaped indentation defined by sidewalls and extending at least partially through the active region and the first semiconductor;
a conductive material over and in contact with the second semiconductor; and
an insulating material in the indentation and electrically insulating (1) at least a portion of the first semiconductor from the second semiconductor and/or (2) the conductive material from at least one of the active region and the first semiconductor.

11. The solid state lighting device of claim 10 , wherein:
a topmost surface of the active region faces away from the first semiconductor and toward the conductive material; and
the insulating material is between at least a portion of the first semiconductor and the second semiconductor and between the active region and at least a portion of the second semiconductor.

12. The solid state lighting device of claim 10 , wherein a topmost surface of the active region contacts the second semiconductor.

13. The solid state lighting device of claim 10 , wherein the first semiconductor, the second semiconductor, the active region, and the indentation comprise a solid state lighting structure.

14. The solid state lighting device of claim 10 , wherein the insulating material includes a continuous upper surface having a portion above or generally coplanar with the topmost surface of the active region.

Assignees

• Micron Technology Inc

Inventors

• Schellhammer Scott D

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/821 Primary

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/8215 Primary

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title