High-resolution display device

Patent metadata

Field	Value
Publication number	US-11769788-B2
Application number	US-202117501996-A
Country	US
Kind code	B2
Filing date	Oct 14, 2021
Priority date	Sep 5, 2018
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

A high-resolution display device is provided. The high-resolution display device includes a light-emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of transparent electrodes respectively formed on the second semiconductor layer in sub-pixel regions, a first electrode connected to the first semiconductor layer, a plurality of second electrodes connected to the plurality of transparent electrodes, a color-converting layer arranged over the light-emitting layer and configured to emit light of a predetermined color based on light generated by the light-emitting layer, which are sequentially stacked on a substrate including a plurality of sub-pixel regions. One or more ion injection regions corresponding to current injection regions corresponding to the plurality of the sub-pixel regions is formed in the second semiconductor layer.

First claim

What is claimed is:

1. A display device comprising:
a substrate comprising a plurality of sub-pixel regions;
a light-emitting layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the substrate;
a plurality of transparent electrodes formed on the second semiconductor layer, each of the plurality of transparent electrodes formed in one of the plurality of sub-pixel regions;
a color-converting layer arranged over the light-emitting layer and configured to emit light of a specific color based on light generated by the light-emitting layer; and
one or more ion injection regions formed in the second semiconductor layer surrounding a plurality of current injection regions corresponding to the plurality of the sub-pixel regions, the one or more ion injection regions extending from the second semiconductor layer to the active layer.

2. The display device of claim 1 , wherein the active layer is continuously formed across the plurality of sub-pixel regions.

3. The display device of claim 1 , wherein the one or more ion injection regions vertically extends from an upper surface of the second semiconductor layer to the active layer.

4. The display device of claim 1 , wherein the active layer comprises the plurality of current injection regions surrounded by the one or more ion injection regions.

5. The display device of claim 1 , wherein a first electrode is connected to the first semiconductor layer through a via hole penetrating a plurality of second electrodes and the active layer.

6. The display device of claim 5 , wherein the first electrode corresponds to the plurality of second electrodes.

7. The display device of claim 1 , wherein the substrate is a conductive substrate, and a first electrode is located on a lower surface of the substrate to face a plurality of second electrodes.

8. The display device of claim 7 , further comprising a buffer layer between the substrate and the first semiconductor layer.

9. The display device of claim 8 , wherein the buffer layer comprises AlN or AlGaN doped with silicon or magnesium.

10. The display device of claim 1 , wherein the plurality of transparent electrodes comprise indium tin oxide (ITO), ZnO, indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO).

11. The display device of claim 1 , further comprising a current blocking layer arranged on the ion injection region to insulate the second semiconductor layer from the one or more ion injection regions.

12. The display device of claim 11 , wherein the current blocking layer comprises silicon oxide or silicon nitride.

13. The display device of claim 5 , further comprising:
a first insulating layer arranged on the substrate to cover the plurality of second electrodes; and
a barrier rib structure arranged on the first insulating layer with gaps to expose the plurality of current injection regions when viewed from a plan view,
wherein the color-converting layer fills the gaps in the barrier rib structure on the first insulating layer.

14. The display device of claim 13 , wherein the barrier rib structure comprises a metal thin film interposed between two insulating layers.

15. The display device of claim 1 , wherein
the light-emitting layer generates blue light, and
the color-converting layer comprises a red-converting layer that emits red light by being excited by the blue light, a green-converting layer that emits green light by being excited by the blue light, and a blue-transmitting layer that transmits the blue light.

16. The display device of claim 1 , wherein each of the one or more ion injection regions is formed between two adjacent current injections regions among the plurality of current injection regions.

17. The display device of claim 11 , wherein the transparent electrodes cover at least a portion of the current blocking layer in a plan view.

18. The display device of claim 1 , wherein the one or more ion injection regions vertically extends from an upper surface of the second semiconductor layer to an upper surface of the first semiconductor layer.

19. The display device of claim 1 , wherein the first semiconductor layer is directly formed on the active layer, and the active layer is directly formed on the second semiconductor layer sequentially stacked on the substrate.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jinjoo
• Ahn Hoyoung
• Choi Junhee
• Kang Sungjin
• Park Junghun

Classifications

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title