Dielectric material, method of preparing the same, and device comprising the same

Patent metadata

Field	Value
Publication number	US-11769630-B2
Application number	US-202117165300-A
Country	US
Kind code	B2
Filing date	Feb 2, 2021
Priority date	Jul 21, 2020
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:

(1− x )K a Na b NbO 3 .x M(A c Sb d )O 3   [Formula 1]
wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.

First claim

What is claimed is:

1. A dielectric material comprising a compound represented by Formula 1:
(1− x )K a Na b NbO 3 .x M(A c Sb d )O 3   [Formula 1]

wherein, in Formula 1, K is potassium, Na is sodium, Nb is niobium, Sb is antimony, O is oxygen,
M is a Group 2 element,
A is a trivalent element, and
0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.

2. The dielectric material of claim 1 , wherein M is strontium (Sr), calcium (Ca), barium (Ba), magnesium (Mg), or a combination thereof.

3. The dielectric material of claim 1 , wherein A is boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), or a combination thereof.

4. The dielectric material of claim 1 , wherein, in Formula 1, x is 0.01 to 0.3.

5. The dielectric material of claim 1 , wherein, in Formula 1, x is 0.05 to 0.2.

6. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 2:
(1− x )K a Na b NbO 3 .x Sr(A c Sb d )O 3   [Formula 2]

wherein, in Formula 2, A is boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), or a combination thereof.

7. The dielectric material of claim 6 , wherein, in Formula 2, x is 0.01 to 0.3.

8. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 3:
(1− x )K a Na b NbO 3 - x Sr(B c Sb d )O 3 .  [Formula 3]

9. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 4:
(1− x )K a Na b NbO 3 - x Sr(Ga b Sb d )O 3 .  [Formula 4]

10. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 5:
(1− x )K a Na b NbO 3 - x Sr(Sc b Sb d )O 3 .  [Formula 5]

11. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 6:
(1− x )K a Na b NbO 3 - x Sr(La b Sb d )O 3 .  [Formula 6]

12. The dielectric material of claim 1 , wherein the compound represented by Formula 1 exhibits a main peak including a singlet form in a diffraction angle (2θ) region of 45° to 47°, as obtained by an X-ray diffraction analysis.

13. The dielectric material of claim 1 , wherein the compound represented by Formula 1 includes a composite-phase crystalline structure including one or more selected from among orthorhombic, cubic, and tetragonal crystalline structures.

14. The dielectric material of claim 13 , wherein the composite-phase crystalline structure includes a pseudo-cubic crystalline structure.

15. The dielectric material of claim 1 , wherein an electric field-polarization plot for the compound represented by Formula 1 appears as a linear curve proportional to electric field, in which a maximum polarization (Pmax) and a polarization (Pr) are decrease as x increases.

16. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is at least one of (1−x)(K a Na b )NbO 3 .xSr(Ga c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Sc c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(La c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(B c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Al c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(In c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Y c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Ce c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Nd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Gd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Sm c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Eu c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xSr(Tb c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Ga c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Sc c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(La c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(B c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Al c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(In c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Y c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Ce c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Nd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Gd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Sm c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Eu c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xCa(Tb c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Ga c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Sc c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(La c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(B c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Al c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(In c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Y c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Ce c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Nd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Gd c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Sm c Sb d )O 3 , (1−x)(K a Na b )NbO 3 .xBa(Eu c Sb d )O 3 , and (1−x)(K a Na b )NbO 3 .xBa(Tb c Sb d )O 3 ,
wherein, in the formulae, x is 0.01 to 0.3, a and b are each independently 0.4 to 0.6, c and d are each independently 0.4 to 0.6, the sum of a and b is 1, and the sum of c and d is 1.

17. The dielectric material of claim 1 , wherein the compound represented by Formula 1 is at least one of (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Ga 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Sc 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(La 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(B 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Al 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(In 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Y 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Ce 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Nd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Gd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Sm 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Eu 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xSr(Tb 0.5 Sb 0.5 )O 3 (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Ga 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Sc 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(La 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(B 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Al 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(In 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Y 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Ce 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Nd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Gd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Sm 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Eu 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xCa(Tb 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Ga 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Sc 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(La 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(B 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Al 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(In 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Y 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Ce 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Nd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Gd 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Sm 0.5 Sb 0.5 )O 3 , (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Eu 0.5 Sb 0.5 )O 3 , and (1−x)(K 0.5 Na 0.5 )NbO 3 .xBa(Tb 0.5 Sb 0.5 )O 3 ,
wherein, x is 0.01 to 0.3.

18. The dielectric material of claim 1 , wherein the compound represented by Formula 1 has a permittivity of 610 or gre

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jeong Taewon
• Park Hyeon Cheol
• Yang Daejin
• Jung Doh Won
• Jo Giyoung

Classifications

• H10D1/692

  Electrodes · CPC title

• H10D1/68

  Capacitors having no potential barriers · CPC title

• H01G4/1254 Primary

  based on niobium or tungsteen, tantalum oxides or niobates, tantalates · CPC title

• C04B35/497

  based on solid solutions with lead oxides · CPC title

• G11C11/221 Primary

  using ferroelectric capacitors · CPC title