Method for forming a sensor circuit

Patent metadata

Field	Value
Publication number	US-11768086-B2
Application number	US-201916456905-A
Country	US
Kind code	B2
Filing date	Jun 28, 2019
Priority date	Dec 23, 2014
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

A method for forming a sensor circuit. The method includes forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate; forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate; and forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.

First claim

What is claimed is:

1. A method for forming a sensor circuit, the method comprising:
forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate, wherein the forming the plurality of magnetoresistive structures having the first predefined reference magnetization direction comprises laser treatment of the first common area during a first time interval;
forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate, wherein the forming the plurality of magnetoresistive structures having the second predefined reference magnetization direction comprises laser treatment of the second common area during a subsequent second time interval; and
forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.

2. The method according to claim 1 , wherein the laser treatment is a fast laser magnetization process.

3. The method according to claim 1 , wherein the first time interval is different from the second time interval.

4. The method according to claim 1 , wherein at least two of the plurality of half-bridge sensor circuits are formed adjacent to one another.

5. The method according to claim 1 , wherein at least part of the forming the plurality of magnetoresistive structures having the first predefined reference magnetization direction, and the forming the plurality of magnetoresistive structures having the second predefined reference magnetization direction, are carried out simultaneously.

6. The method according to claim 1 , wherein the forming the plurality of magnetoresistive structures having the first and second predefined reference magnetization directions comprise forming exchange layers, pinned layers, non-magnetic spacer layers, and sensing layers simultaneously for both magnetoresistive structures having the first and second predefined reference magnetization directions.

7. The method of claim 6 , wherein the forming exchange layers, the pinned layers, the non-magnetic spacer layers, and the sensing layers are carried out by evaporation, sputter, or chemical vapor deposition.

8. The method according to claim 1 , wherein the electrically conductive structures are formed simultaneously.

9. The method according to claim 1 , wherein the forming the plurality of magnetoresistive structures having the first predefined reference magnetization direction comprises forming the plurality of magnetoresistive structures having the first predefined reference magnetization direction adjacent to each other.

10. The method according to claim 9 , wherein the forming the plurality of magnetoresistive structures having the second predefined reference magnetization direction comprises forming the plurality of magnetoresistive structures having the second predefined reference magnetization direction adjacent to each other.

11. The method according to claim 1 , wherein the forming the electrically conductive structures comprises electrically coupling the plurality of half-bridge sensor circuits to a sensor output value determination circuit, an error determination circuit, and a control circuit.

12. The method according to claim 11 , wherein the sensor output value determination circuit, the error determination circuit, and the control circuit are formed on the common semiconductor substrate.

13. The method according to claim 1 , wherein the forming the electrically conductive structures comprises electrically coupling the plurality of half-bridge sensor circuits to a sensor output value determiner, an error determiner, and a controller, and the sensor output value determiner, the error determiner, and the controller are implemented by a computer program.

14. The method according to claim 11 , wherein the sensor output value determination circuit, the error determination circuit, and the control circuit are formed on a different semiconductor substrate than the common semiconductor substrate.

15. The method according to claim 1 , wherein no magnetoresistive structure having the second predefined reference magnetization direction is formed in the first common area, and/or no magnetoresistive structure having the first predefined reference magnetization direction is formed in the second common area.

16. The method according to claim 1 , wherein at least one of the plurality of half-bridge sensor circuits is formed adjacent to an identical redundant half-bridge sensor circuit.

Assignees

• Infineon Technologies Ag

Inventors

• Jost Franz
• Witschnig Harald
• Zimmer Juergen

Classifications

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title

• G01D5/16 Primary

  by varying resistance · CPC title

• G01D3/08

  with provision for safeguarding the apparatus, e.g. against abnormal operation, against breakdown · CPC title

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• G01R33/09

  Magnetoresistive devices · CPC title