Chemical liquid, chemical liquid container, and method for treating substrate

Patent metadata

Field	Value
Publication number	US-11767595-B2
Application number	US-202318158061-A
Country	US
Kind code	B2
Filing date	Jan 23, 2023
Priority date	Jul 31, 2020
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.

First claim

What is claimed is:

1. A chemical liquid used for removing a ruthenium-containing substance on a substrate, comprising:
hypochlorous acid or a salt thereof; and
bromic acid or a salt thereof,
wherein a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and
a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.

2. The chemical liquid according to claim 1 ,
wherein a mass ratio of the content of the hypochlorous acid or a salt thereof to the content of the bromic acid or a salt thereof is 1.0×10 3 to 1.0×10 7 .

3. The chemical liquid according to claim 1 , further comprising:
chloric acid or a salt thereof,
wherein a content of the chloric acid or a salt thereof is 0.0001 to 500.0 ppm by mass with respect to the total mass of the chemical liquid.

4. The chemical liquid according to claim 1 ,
wherein the hypochlorous acid or a salt thereof includes a quaternary ammonium salt of the hypochlorous acid.

5. The chemical liquid according to claim 1 , further comprising:
a buffer,
wherein the buffer includes at least one buffer selected from the group consisting of a boric acid buffer, an amine buffer, a phosphoric acid buffer, and an organic buffer.

6. The chemical liquid according to claim 1 , further comprising:
a chelating agent,
wherein the chelating agent includes at least one chelating agent selected from the group consisting of a carboxylic acid, an aminopolycarboxylic acid, and phosphonic acid.

7. The chemical liquid according to claim 1 ,
wherein a pH of the chemical liquid is 7.0 to 13.0.

8. A chemical liquid container comprising:
a container that contains a coloring pigment; and
the chemical liquid according to claim 1 that is stored in the container.

9. A method for treating a substrate, comprising:
a step A of removing a ruthenium-containing substance on a substrate by using the chemical liquid according to claim 1 .

10. The method for treating a substrate according to claim 9 ,
wherein the step A is a step A1 of performing a recess etching treatment on a ruthenium-containing wiring line disposed on a substrate by using the chemical liquid, a step A2 of removing a ruthenium-containing film at an outer edge of a substrate, on which the ruthenium-containing film is disposed, by using the chemical liquid, a step A3 of removing a ruthenium-containing substance attached to a back surface of a substrate, on which a ruthenium-containing film is disposed, by using the chemical liquid, a step A4 of removing a ruthenium-containing substance on a substrate, which has undergone dry etching, by using the chemical liquid, or a step A5 of removing a ruthenium-containing substance on a substrate, which has undergone a chemical mechanical polishing treatment, by using the chemical liquid.

11. The chemical liquid according to claim 2 , further comprising:
chloric acid or a salt thereof,
wherein a content of the chloric acid or a salt thereof is 0.0001 to 500.0 ppm by mass with respect to the total mass of the chemical liquid.

12. The chemical liquid according to claim 2 ,
wherein the hypochlorous acid or a salt thereof includes a quaternary ammonium salt of the hypochlorous acid.

13. The chemical liquid according to claim 2 , further comprising:
a buffer,
wherein the buffer includes at least one buffer selected from the group consisting of a boric acid buffer, an amine buffer, a phosphoric acid buffer, and an organic buffer.

14. The chemical liquid according to claim 2 , further comprising:
a chelating agent,
wherein the chelating agent includes at least one chelating agent selected from the group consisting of a carboxylic acid, an aminopolycarboxylic acid, and phosphonic acid.

15. The chemical liquid according to claim 2 ,
wherein a pH of the chemical liquid is 7.0 to 13.0.

16. A chemical liquid container comprising:
a container that contains a coloring pigment; and
the chemical liquid according to claim 2 that is stored in the container.

17. A method for treating a substrate, comprising:
a step A of removing a ruthenium-containing substance on a substrate by using the chemical liquid according to claim 2 .

18. The method for treating a substrate according to claim 17 ,
wherein the step A is a step A1 of performing a recess etching treatment on a ruthenium-containing wiring line disposed on a substrate by using the chemical liquid, a step A2 of removing a ruthenium-containing film at an outer edge of a substrate, on which the ruthenium-containing film is disposed, by using the chemical liquid, a step A3 of removing a ruthenium-containing substance attached to a back surface of a substrate, on which a ruthenium-containing film is disposed, by using the chemical liquid, a step A4 of removing a ruthenium-containing substance on a substrate, which has undergone dry etching, by using the chemical liquid, or a step A5 of removing a ruthenium-containing substance on a substrate, which has undergone a chemical mechanical polishing treatment, by using the chemical liquid.

19. The chemical liquid according to claim 3 ,
wherein the hypochlorous acid or a salt thereof includes a quaternary ammonium salt of the hypochlorous acid.

20. The chemical liquid according to claim 3 , further comprising:
a buffer,
wherein the buffer includes at least one buffer selected from the group consisting of a boric acid buffer, an amine buffer, a phosphoric acid buffer, and an organic buffer.

Assignees

• Fujifilm Corp

Inventors

• Mizutani Atsushi

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• C11D3/362

  Phosphates or phosphites · CPC title

• C11D3/33

  Amino carboxylic acids · CPC title

• C11D3/2075

  Carboxylic acids-salts thereof · CPC title