Narrow-bandgap perovskites using quasi-2d cation engineering
US-2023157039-A1 · May 18, 2023 · US
US11765964B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11765964-B2 |
| Application number | US-202117388235-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2021 |
| Priority date | Jul 31, 2020 |
| Publication date | Sep 19, 2023 |
| Grant date | Sep 19, 2023 |
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The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX 3 and a second layer that includes a perovskite-like material defined by at least one of A′ 2 B′X′ 4 , A′ 3 B′ 2 X′ 9 , A′B′X′ 4 , A′ 2 B′X′ 6 , and/or A′ 2 AB′ 2 X′ 7 , where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.
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What is claimed is: 1. A composition comprising: a first layer comprising a perovskite defined by ABX 3 ; and a second layer comprising a perovskite-like material defined by at least one of A′ 2 B′X′ 4 , A′ 3 B′ 2 X′ 9 , A′B′X′ 4 , A′ 2 B′X′ 6 , or A′ 2 AB′ 2 X′ 7 , wherein: the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A. 2. The composition of claim 1 , wherein A′ comprises an ammonium functional group. 3. The composition of claim 2 , wherein A′ comprises at least one of butylammonium (BA), phenylethylammonium (PEA), 4-flouorophenethylammonium (F-PEA), N-methyl-1,3-propane diammonium (ME-PDA), 1,4-butane diammonium (BDA), or N,N-dimethyl-1,3-propane diammonium (DMePDA), dipropylammonium, or diethylammonium. 4. The composition of claim 1 , wherein the second layer has a thickness between about 1 nm and about 1 μm. 5. The composition of claim 4 , wherein the thickness is between about 10 nm and about 100 nm. 6. The composition of claim 1 , wherein the first layer has a thickness between about 200 nm and about 1000 nm. 7. The composition of claim 1 , wherein X comprises a halide. 8. The composition of claim 7 , wherein X comprises at least one of iodide, bromide, or chloride. 9. The composition of claim 1 , wherein B comprises at least one of tin or lead. 10. The composition of claim 1 , wherein A comprises at least one of methylammonium (MA), formamidinium (FA), dimethylammonium, or cesium. 11. The composition of claim 10 , wherein the perovskite comprises FA (1-x-y) MA x Cs y PbI (3-z) Br z . 12. The composition of claim 1 , wherein X′ comprises a halide. 13. The composition of claim 12 , wherein X′ comprises at least one of iodide, bromide, or chloride. 14. The composition of claim 1 , wherein B′ comprises at least one of tin or lead. 15. The composition of claim 1 , wherein the perovskite-like material comprises BA 2 (MA x FA 1-x )Pb 2 (I 1-y Br y ) 7 . 16. The composition of claim 1 , wherein the perovskite-like material comprises at least one of BA 2 PbI 4 , BA 2 PbBr 4 , BA 2 MAPb 2 I 7 , BA 2 FAPb 2 I 7 , BA 2 MAPb 2 Br 7 , or BA 2 FAPb 2 Br 7 . 17. A device comprising: a first layer comprising: a perovskite; a surface that is substantially planar; the surface comprises a cut into the surface; and the cut penetrates the surface and the first layer and comprises a width, a depth, a length, and an internal surface; a second layer comprising a perovskite-like material, wherein: the second layer covers at least a portion of the internal surface. 18. A method comprising: depositing a second layer onto a first layer, wherein: the first layer comprises a perovskite, the second layer comprises a perovskite-like layer, and the depositing is performed using at least one of a solution method or a vapor-phase method. 19. The method of claim 18 , wherein the depositing is performed using the vapor-phase method while simultaneously heating at least a portion of the first layer. 20. The method of claim 19 , wherein the depositing is performed using an atomic layer deposition (ALD) technique.
Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title
Electrical configurations of PV cells, e.g. series connections or parallel connections · CPC title
comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title
Photovoltaic [PV] devices · CPC title
Coordination compounds · CPC title
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