Display panel and display device
US-2024423023-A1 · Dec 19, 2024 · US
US11765942B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11765942-B2 |
| Application number | US-202016972766-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2020 |
| Priority date | Sep 9, 2020 |
| Publication date | Sep 19, 2023 |
| Grant date | Sep 19, 2023 |
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A display device and a manufacturing method of the display device are provided. The display device includes a substrate; a pixel definition layer disposed on the substrate and having a plurality of pixel openings; a surface-active nanolayer disposed on a surface of the substrate and on a surface extending to the pixel definition layer, wherein the surface-active nanolayer covers a plurality of nanoparticles; and a light-emitting layer disposed in the plurality of pixel openings.
Opening claim text (preview).
What is claimed is: 1. A display device, comprising: a substrate; a pixel definition layer disposed on the substrate and having a plurality of pixel openings; a surface-active nanolayer disposed on a surface of the substrate and on a surface extending to the pixel definition layer, wherein the surface-active nanolayer covers a plurality of nanoparticles; and a light-emitting layer disposed in the plurality of pixel openings. 2. The display device as claimed in claim 1 , wherein the surface-active nanolayer comprises a plurality of discontinuous nanoparticles, a material of the nanoparticles comprises a conductive metal or conductive macromolecules, and the conductive metal comprises gold nanoparticles or silver nanoparticles. 3. The display device as claimed in claim 1 , wherein a material of the surface-active nanolayer comprises poly(3,4-ethylenedioxythiophene) and polystyrene sulfonate, a ratio of the poly(3,4-ethylenedioxythiophene) to the polystyrene sulfonate ranges from 1:5 to 8:1, and a mass fraction of the poly(3,4-ethylenedioxythiophene) ranges from 25% to 40%. 4. The display device as claimed in claim 1 , wherein a maximum height of the nanoparticles is less than a thickness of the surface-active nanolayer. 5. The display device as claimed in claim 1 , wherein a maximum height of the nanoparticles ranges from 20 nm to 50 nm, and a thickness of the surface-active nanolayer ranges from 20 nm to 80 nm. 6. The display device as claimed in claim 1 , wherein an energy level of the surface-active nanolayer matches an energy level of the light-emitting layer. 7. The display device as claimed in claim 1 , wherein a surface of the surface-active nanolayer away from the substrate is smooth. 8. The display device as claimed in claim 1 , wherein a plurality of anodes are disposed on the surface of the substrate, the pixel definition layer comprises a plurality of walls, and each of the walls is disposed between a gap of two adjacent anodes. 9. A manufacturing method of a display device, comprising: providing a substrate; manufacturing a pixel definition layer on the substrate, wherein the pixel definition layer has a plurality of pixel openings; manufacturing a surface-active nanolayer on a surface of the substrate and a surface extending to the pixel definition layer, wherein the surface-active nanolayer covers a plurality of nanoparticles; and manufacturing a light-emitting layer in the plurality of pixel openings to obtain the display device. 10. The manufacturing method as claimed in claim 9 , wherein a spin coating method, a coating method, a printing method, or an evaporation method is used for manufacturing the surface-active nanolayer, and the printing method, or the evaporation method is used for manufacturing the light-emitting layer. 11. The manufacturing method as claimed in claim 9 , wherein manufacturing the surface-active nanolayer comprises: manufacturing a first solution mixed with nanoparticles; spin coating the first solution on the surface of the substrate and the surface extending to the pixel definition layer; drying and baking the first solution to remove a solvent of the first solution to obtain the plurality of nanoparticles; manufacturing a second solution mixed with a surface-active agent; spin coating the second solution on the surface of the substrate and the surface extending to the pixel definition layer; and drying and baking the second solution to remove a solvent of the second solution to obtain the surface-active nanolayer, wherein the surface-active nanolayer covers the plurality of nanoparticles. 12. The manufacturing method as claimed in claim 9 , wherein manufacturing the surface-active nanolayer comprises: manufacturing a third solution mixed with nanoparticles and a surface-active agent; spin coating the third solution on the surface of the substrate and the surface extending to the pixel definition layer; drying and baking the third solution to remove a solvent of the third solution to obtain the surface-active nanolayer, wherein the surface-active nanolayer covers the plurality of nanoparticles. 13. The manufacturing method as claimed in claim 9 , wherein the surface-active nanolayer comprises a plurality of discontinuous nanoparticles. 14. The manufacturing method as claimed in claim 9 , wherein a material of manufacturing the nanoparticles comprises a conductive metal or conductive macromolecules, and the conductive metal comprises gold nanoparticles or silver nanoparticles. 15. The manufacturing method as claimed in claim 9 , wherein a material of manufacturing the surface-active nanolayer comprises poly(3,4-ethylenedioxythiophene) and polystyrene sulfonate, a ratio of the poly(3,4-ethylenedioxythiophene) to the polystyrene sulfonate ranges from 1:5 to 8:1, and a mass fraction of the poly(3,4-ethylenedioxythiophene) ranges from 25% to 40%. 16. The manufacturing method as claimed in claim 9 , wherein a maximum height of the nanoparticles is less than a thickness of the surface-active nanolayer. 17. The manufacturing method as claimed in claim 9 , wherein a maximum height of the nanoparticles ranges from 20 nm to 50 nm, and a thickness of the surface-active nanolayer ranges from 20 nm to 80 nm. 18. The manufacturing method as claimed in claim 9 , wherein an energy level of a material of manufacturing the surface-active nanolayer matches an energy level of a material of manufacturing the light-emitting layer. 19. The manufacturing method as claimed in claim 9 , wherein manufacturing the surface-active nanolayer comprises performing a planarizing process on a surface of the surface-active nanolayer away from the substrate. 20. The manufacturing method as claimed in claim 9 , wherein the manufacturing method comprises manufacturing a plurality of anodes on the surface of the substrate, the pixel definition layer comprises a plurality of walls, and each of the walls is disposed between a gap of two adjacent anodes.
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