Solid-state imaging device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-11765483-B2
Application number	US-202217656584-A
Country	US
Kind code	B2
Filing date	Mar 25, 2022
Priority date	Apr 11, 2017
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

First claim

The invention claimed is:

1. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, and
wherein the voltage of the third electrode during exposure is feedback-controlled according to an output of a frame image obtained before exposure.

2. The solid-state imaging device according to claim 1 , wherein
in a case in which a level corresponding to the output of the frame image is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the output of the frame image is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.

3. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein the voltage of the third electrode during a signal level output is controlled according to a reset level output of a pixel including the first electrode and the photoelectric conversion layer.

4. The solid-state imaging device according to claim 3 , wherein
in a case in which a level corresponding to the reset level output is higher than a predetermined threshold value, the voltage of the third electrode during the signal level output is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the reset level output is lower than the predetermined threshold value, the voltage of the third electrode during the signal level output is increased to assist the transfer of charges.

5. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, the solid-state imaging device further comprising:
a temperature sensor configured to detect a temperature of the solid-state imaging device, wherein the voltage of the third electrode during imaging is controlled according to the detected temperature.

6. The solid-state imaging device according to claim 5 , wherein
in a case in which a level corresponding to the temperature detection result is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the temperature detection result is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.

7. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein, according to an output of a light-shielding pixel disposed in a vicinity of a valid pixel including the first electrode and the photoelectric conversion layer, the voltage of the third electrode disposed for the valid pixel during imaging is feedback-controlled.

8. The solid-state imaging device according to claim 7 , wherein
in a case in which a level corresponding to the detection result is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the detection result is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the charge transfer.

9. The solid-state imaging device according to claim 7 , wherein
in a case in which a level corresponding to the output of the light-shielding pixel is higher than a predetermined threshold value, the voltage of the third electrode of the valid pixel is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the output of the light-shielding pixel is lower than the predetermined threshold value, the voltage of the third electrode of the valid pixel is increased to assist the transfer of charges.

10. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein the voltage of the third electrode during imaging is controlled according to a preset gain, and wherein
in a case in which a level corresponding to the preset gain is lower than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and
in a case in which the level corresponding to the preset gain is higher than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.

11. A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and
a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or
a transfer of charges to the third electrode,
wherein the detection result corresponds to at least one of detection results regarding a

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Uesugi Yuji
• Koga Fumihiko
• Hatano Keisuke

Classifications

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/802 Primary

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• H10F39/803 Primary

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F39/8023

  Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery · CPC title