Acoustic wave device, multiplexer, high-frequency front end circuit, and communication device

Patent metadata

Field	Value
Publication number	US-11764880-B2
Application number	US-202016914521-A
Country	US
Kind code	B2
Filing date	Jun 29, 2020
Priority date	Jan 12, 2018
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.

First claim

What is claimed is:

1. An acoustic wave device provided between a first terminal which is an antenna terminal and a second terminal which is different from the first terminal, the acoustic wave device comprising:
a plurality of acoustic wave resonators; wherein
the plurality of acoustic wave resonators include:
a plurality of series arm resonators provided on a first path electrically connecting the first terminal and the second terminal; and
a plurality of parallel arm resonators provided on a plurality of second paths electrically connecting each of a plurality of nodes on the first path and ground;

when an acoustic wave resonator electrically closest to the first terminal among the plurality of series arm resonators is a first antenna end resonator and an acoustic wave resonator electrically closest to the first terminal among the plurality of parallel arm resonators is a second antenna end resonator, each of the first and second antenna end resonators is a SAW resonator or a BAW resonator, and at least one acoustic wave resonator other than the first and second antenna end resonators among the plurality of acoustic wave resonators is a first acoustic wave resonator;
the SAW resonator includes:
a piezoelectric substrate; and
an interdigital transducer (IDT) electrode provided on the piezoelectric substrate and having a plurality of electrode fingers;

the first acoustic wave resonator includes:
a piezoelectric layer;
an IDT electrode provided on the piezoelectric layer and including a plurality of electrode fingers; and
a high acoustic velocity member which is located on a side opposite to the IDT electrode with the piezoelectric layer provided between the high acoustic velocity member and the IDT electrode and in which an acoustic velocity of a bulk wave propagating through is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer; and

a thickness of the piezoelectric layer is about 3.5λ or less when a wavelength of an acoustic wave determined by an electrode finger period of the IDT electrode is λ.

2. The acoustic wave device according to claim 1 , wherein the BAW resonator includes:
a first electrode;
a piezoelectric film provided on the first electrode; and
a second electrode provided on the piezoelectric film.

3. The acoustic wave device according to claim 1 , wherein a stopband ripple of at least one of the first and second antenna end resonators is smaller than a stopband ripple of the first acoustic wave resonator.

4. The acoustic wave device according to claim 3 , wherein only the stopband ripple of the at least one of the first and second antenna end resonators is smaller than the stopband ripple of the first acoustic wave resonator.

5. The acoustic wave device according to claim 1 , wherein
the first antenna end resonator is electrically closer to the first terminal than the plurality of parallel arm resonators.

6. The acoustic wave device according to claim 1 , wherein
at least one of the first and second antenna end resonators is directly connected to the first terminal.

7. The acoustic wave device according to claim 1 , wherein
at least one acoustic wave resonator including the first and second antenna end resonators among the plurality of acoustic wave resonators is the SAW resonator or the BAW resonator;
an acoustic wave resonator other than the at least one acoustic wave resonator among the plurality of acoustic wave resonators is the first acoustic wave resonator; and
the SAW resonator or the BAW resonator is provided on a chip different from a chip on which the first acoustic wave resonator is provided.

8. The acoustic wave device according to claim 1 , wherein
the high acoustic velocity member includes:
a high acoustic velocity film in which an acoustic velocity of a bulk wave propagating through is higher than the acoustic velocity of the acoustic wave propagating through the piezoelectric layer; and
a support substrate that supports the high acoustic velocity film; and

the first acoustic wave resonator further includes a low acoustic velocity film provided on the high acoustic velocity film.

9. The acoustic wave device according to claim 8 , wherein a thickness of the low acoustic velocity film is about 2.0 λ or less.

10. The acoustic wave device according to claim 1 , wherein
the first acoustic wave resonator further includes: a low acoustic velocity film which is provided between the high acoustic velocity member and the piezoelectric layer and in which an acoustic velocity of a bulk wave propagating through is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer; and
the high acoustic velocity member is a high acoustic velocity support substrate in which an acoustic velocity of a bulk wave propagating through is higher than the acoustic velocity of the acoustic wave propagating through the piezoelectric layer.

11. A multiplexer comprising:
a filter including the acoustic wave device according to claim 1 ; and
a second filter provided between the first terminal and a third terminal that is different from the first terminal; wherein
a pass band of the first filter is a lower frequency band than a pass band of the second filter.

12. The multiplexer according to claim 11 , wherein
the multiplexer includes a plurality of resonator groups each including the plurality of acoustic wave resonators;
the first terminal is a common terminal and the second terminal is an individual terminal in the plurality of resonator groups; and
the antenna end resonators of the plurality of resonator groups are integrated in one chip.

13. The multiplexer according to claim 11 , wherein a highest frequency of the pass band of the first filter is lower than a lowest frequency of the pass band of the second filter.

14. A high-frequency front end circuit comprising:
the multiplexer according to claim 11 ; and
an amplifier circuit electrically connected to the multiplexer.

15. A communication device comprising:
the high-frequency front end circuit according to claim 14 ; and
a signal processing circuit that processes high-frequency signals transmitted and received by an antenna; wherein
the high-frequency front end circuit communicates the high-frequency signals between the antenna and the signal processing circuit.

16. The multiplexer according to claim 11 , further comprising a third filter provided between the first terminal and a fourth terminal that is different from the first terminal.

17. The acoustic wave device according to claim 1 , wherein the first acoustic wave resonator is a one-port acoustic wave resonator including a reflector provided on each side of the IDT electrode in an acoustic wave propagation direction.

18. The acoustic wave device according to claim 1 , wherein the high acoustic velocity is a crystal substrate.

Assignees

• Murata Manufacturing Co

Inventors

• Nakagawa Ryo
• Daimon Katsuya
• Iwamoto Hideki
• Takai Tsutomu

Classifications

• H03F3/195 Primary

  in integrated circuits · CPC title

• H04B11/00 Primary

  Transmission systems employing ultrasonic, sonic or infrasonic waves · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03F1/56

  Modifications of input or output impedances, not otherwise provided for · CPC title