Composition comprising block copolymer, and method for producing siliceous film using the same

Patent metadata

Field	Value
Publication number	US-11760842-B2
Application number	US-202017602416-A
Country	US
Kind code	B2
Filing date	Apr 6, 2020
Priority date	Apr 8, 2019
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

To provide a siliceous film manufacturing composition that can fill a narrow and a high aspect ratio trench and can produce a thick siliceous film. [Means for Solution] The present invention provides a siliceous film manufacturing composition that comprises, (a) a block copolymer having a linear and/or cyclic polysilane backbone block with or more silicon atoms and a polycarbosilane backbone block with or more silicon atoms, and (b) a solvent.

First claim

The invention claimed is:

1. A siliceous film manufacturing composition comprising, (a) a block copolymer having a linear and/or cyclic polysilane backbone Block A with 5 or more silicon atoms and a polycarbosilane backbone Block B with 15 or more silicon atoms, wherein at least one silicon atom of Block A is bound to at least one silicon atom of Block B with a single bond and/or a cross-linker containing silicon atom, and (b) a solvent.

2. The siliceous film manufacturing composition according to claim 1 , wherein Block A comprises 5 or more repeating units selected from at least one of the groups consisting of units represented by the following formulae (I-1) to (I-3), and Block B comprises 15 or more repeating units selected from at least one of the groups consisting of units represented by the following formulae (II-1) to (II-4).

in which
each R Ia , R Ib and R Ic is independently hydrogen, halogen, C 1 -C 6 alkyl, or C 6 -C 10 aryl,

in which
each R IIa -R IIf is independently hydrogen, C 1 -C 6 alkyl, or C 6 -C 10 aryl.

3. The siliceous film manufacturing composition according to claim 1 , wherein the mass average molecular weight of the block copolymer is 1,200 to 25,000.

4. The siliceous film manufacturing composition according to claim 1 , wherein a ratio of total number of repeating units of Block A to total number of repeating units of Block B is 20-230%.

5. The siliceous film manufacturing composition according to claim 1 , wherein at least one of R Ia , R Ib and R Ic of Block A is a single bond and the remaining is hydrogen.

6. The siliceous film manufacturing composition according to claim 1 , wherein at least one of R IIa -R IIf of Block B is a single bond and the remaining is hydrogen.

7. The siliceous film manufacturing composition according to claim 1 , wherein the block copolymer constituted by a main chain comprising Block B and a side chain comprising Block A.

8. The siliceous film manufacturing composition according to claim 1 , wherein at least one of Block A is (I-4).

in which
each R Id and R Ie is independently hydrogen, halogen, C 1 -C 6 alkyl, C 6 -C 10 aryl, or a single bond, provided that at least one of R Id or R Ie is a single bond, p is an integer of 5 or more.

9. The siliceous film manufacturing composition according to claim 1 , wherein the block copolymer comprising Block A bound to another Block A, Block B bound to another Block B, and/or Block A bound to Block B with a cross-linker containing silicon atom.

10. The siliceous film manufacturing composition according to claim 1 , wherein the solvent having a relative dielectric constant of 3.0 or less.

11. A method for manufacturing a siliceous film comprising;
applying the siliceous film manufacturing composition according to claim 1 on a substrate to form a coating, and
curing the coating under an oxidizing atmosphere.

12. The method according to claim 11 , wherein the oxidizing atmosphere is oxygen partial pressure of 20-101 kPa and/or water vapor partial pressure of 0.5-101 kPa.

13. The method according to claim 11 , further comprises photoirradiation with wavelength of 245-438 nm on the coating prior to the curing.

14. The method according to any one of claim 11 , wherein the curing is carried out at 200-1000° C.

15. A siliceous film obtainable by the method for manufacturing a siliceous film according to claim 11 .

16. A method for manufacturing an electronic device comprising the method for manufacturing the siliceous film according to claim 11 .

Assignees

• Merck Patent Gmbh

Inventors

• Fujiwara Takashi
• Sato Atsuhiko

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• C09D183/16 Primary

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08G77/60 Primary

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title