Electromechanical resonators based on metal-chalcogenide nanotubes

US11757428B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11757428-B2
Application numberUS-202217853987-A
CountryUS
Kind codeB2
Filing dateJun 30, 2022
Priority dateDec 27, 2016
Publication dateSep 12, 2023
Grant dateSep 12, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of fabrication of an electromechanical resonator, said method comprising: providing a substrate; applying at least a first pad and a second pad onto said substrate such that said pads are not in contact with each other; applying at least one metal-chalcogenide nanotube onto said pads such that a first region of said nanotube is in contact with said first pad and a second region of said nanotube is in contact with said second pad; applying a pedal on top of said nanotube, such that said pedal is in contact with said nanotube, wherein said pedal is of a rectangular shape and is attached to said nanotube such that the longer dimension of said rectangle is positioned perpendicular to the longer dimension of said nanotube; and wherein said rectangular pedal is positioned asymmetrically with respect to said nanotube; and removing a substrate surface layer underneath said nanotube, thus suspending said nanotube over said substrate. 2. The method of claim 1 , wherein said substrate comprises Si coated by SiO 2 . 3. The method of claim 1 , wherein said pads comprise chromium layer coated by gold layer. 4. The method of claim 1 , wherein the step of applying said pads comprises photolithography and metal deposition. 5. The method of claim 1 , wherein the step of applying at least one metal-chalcogenide nanotube, comprises dry dispersion of said nanotube. 6. The method of claim 1 , wherein the step of removing a substrate surface layer underneath said nanotube comprises etching said substrate layer using hydrofluoric acid (HF). 7. The method of claim 6 , wherein said etching is followed by critical point drying (CPD). 8. The method of claim 1 , wherein following said step of removing a substrate surface layer, said pedal is suspended over said substrate. 9. The method of claim 1 , further comprising fabricating at least one electrode on said substrate.

Assignees

Inventors

Classifications

  • B82B1/002Primary

    Devices comprising flexible or deformable elements · CPC title

  • H03H3/0072Primary

    of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C) · CPC title

  • H03H9/2463Primary

    Clamped-clamped beam resonators · CPC title

  • Resonators; ultrasonic resonators · CPC title

  • Torsional · CPC title

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Frequently asked questions

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What does patent US11757428B2 cover?
This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.
Who is the assignee on this patent?
Yeda Res & Dev, B G Negev Technologies And Applications Ltd At Ben Gurion Univ
What technology area does this patent fall under?
Primary CPC classification B82B1/002. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Sep 12 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).