Gas delivery system for high pressure processing chamber

Patent metadata

Field	Value
Publication number	US-11756803-B2
Application number	US-202218071085-A
Country	US
Kind code	B2
Filing date	Nov 29, 2022
Priority date	Nov 11, 2017
Publication date	Sep 12, 2023
Grant date	Sep 12, 2023

Abstract

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

First claim

What is claimed is:

1. A method of operating a high-pressure processing system, the method comprising:
bringing a first chamber and a second chamber to a first pressure that is less than one atmosphere;
while an isolation valve is closed, reducing the first chamber from the first pressure to a second pressure and reducing the second chamber from the first pressure to a third pressure;
pressurizing the first chamber to a fourth pressure that is above atmospheric pressure and less than 10 atmospheres with a gas delivery system;
pressurizing the first chamber to a fifth pressure that is above 10 atmospheres with the gas delivery system; and
processing a substrate while the first chamber is at the fifth pressure.

2. The method of claim 1 further comprising:
while the isolation valve between the first chamber and the second chamber is open, transporting the substrate from the second chamber into the first chamber;
evacuating the first chamber in response to completing the processing of the substrate; and
opening, in response to evacuating the first chamber, the isolation valve and removing the substrate from the first chamber.

3. The method of claim 2 , wherein evacuating the first chamber comprises lowering a pressure in the first chamber to a sixth pressure that is less than the first pressure.

4. The method of claim 3 , wherein the sixth pressure is greater than the third pressure.

5. The method of claim 1 , wherein pressurizing the first chamber to the fifth pressure comprises supplying a first gas to the first chamber, and wherein pressurizing the first chamber to the fourth pressure comprises supplying a second gas of a different composition than the first gas to the first chamber.

6. The method of claim 5 , wherein the first gas includes at least one of H2 or NH3.

7. The method of claim 1 , wherein pressurizing the first chamber to the fourth pressure comprises:
isolating a first gas delivery module of the gas delivery system from the first chamber; and
fluidically coupling a second gas delivery module of the gas delivery system with the first chamber.

8. The method of claim 7 , wherein pressurizing the first chamber to the fifth pressure comprises:
isolating the second gas delivery module from the first chamber; and
fluidically coupling the first gas delivery module with the first chamber.

9. The method of claim 1 wherein the third pressure is less than the second pressure.

10. The method of claim 1 further comprising:
comparing measurements from a first pressure sensor in the first chamber and a second pressure sensor in the second chamber; and
controlling a pressure in the first chamber and a pressure in the second chamber based on the comparison of the measurements.

11. A high-pressure processing system comprising:
a first chamber;
a second chamber;
an isolation valve disposed between the first chamber and the second chamber;
a gas delivery system configured to:
pressurize the first chamber and the second chamber to a first pressure that is less than one atmosphere;
pressurize the first chamber to a second pressure that is above atmospheric pressure and less than 10 atmospheres; and
pressurize the first chamber to a third pressure that is above 10 atmosphere; wherein a substrate is processed within the first chamber while the first chamber is at the third pressure; and

a foreline configured to reduce, while the isolation valve is closed, the first chamber from the first pressure to a fourth pressure, and reduce the second chamber from the first pressure to a fifth pressure.

12. The high-pressure processing system of claim 11 , wherein, while the isolation valve is open, the substrate is transported from the second chamber into the first chamber, wherein the first chamber is evacuated in response to completing the processing of the substrate, and, in response to evacuating the first chamber, the isolation valve is opened and the substrate is removed from the first chamber.

13. The high-pressure processing system of claim 12 , wherein evacuating the first chamber comprises lowering a pressure in the first chamber to a sixth pressure that is less than the first pressure.

14. The high-pressure processing system of claim 13 , wherein the sixth pressure is greater than the third pressure.

15. The high-pressure processing system of claim 11 , wherein the gas delivery system is configured to:
supply a first gas to the first chamber to pressurize the first chamber to the second pressure; and
supply a second gas of different composition than the first gas to the first chamber to pressurize the first chamber to the third pressure.

16. The high-pressure processing system of claim 15 , wherein the first gas includes at least one of H2 or NH3.

17. The high-pressure processing system of claim 11 , wherein pressurizing the first chamber to the second pressure comprises:
isolating a first gas delivery module of the gas delivery system from the first chamber; and
fluidically coupling a second gas delivery module of the gas delivery system with the first chamber.

18. The high-pressure processing system of claim 17 , wherein pressurizing the first chamber to the third pressure comprises:
isolating the second gas delivery module from the first chamber; and
fluidically coupling the first gas delivery module with the first chamber.

19. The high-pressure processing system of claim 11 wherein the fifth pressure is less than the fourth pressure.

20. The high-pressure processing system of claim 11 further comprising:
a first pressure sensor in the first chamber;
a second pressure sensor in the second chamber; and
a controller configured to:
compare measurements from the first pressure sensor and the second pressure sensor; and
control a pressure in the first chamber and a pressure in the second chamber based on the comparison of the measurements.

Assignees

• Micromaterials Llc
• Applied Materials Inc

Inventors

• Liang Qiwei
• Nemani Srinivas D
• Kang Sean S
• Khan Adib
• Yieh Ellie Y

Classifications

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title