Guided SAW device

Patent metadata

Field	Value
Publication number	US-11750170-B2
Application number	US-202016952409-A
Country	US
Kind code	B2
Filing date	Nov 19, 2020
Priority date	Oct 14, 2016
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

A guided surface acoustic wave (SAW) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first Euler angle (ϕ), a second Euler angle (θ), and a third Euler angle (ψ). The first Euler angle (ϕ), the second Euler angle (θ), and the third Euler angle (ψ) are chosen such that a velocity of wave propagation within the substrate is less than 6,000 m/s.

First claim

What is claimed is:

1. A guided surface acoustic wave (SAW) device comprising:
a silicon substrate having a crystalline orientation defined by a first Euler angle (ϕ), a second Euler angle (θ), and a third Euler angle (ψ), wherein the first Euler angle (ϕ), the second Euler angle (θ), and the third Euler angle (ψ) such that a velocity of wave propagation within the substrate is less than 6,000 m/s;
a piezoelectric layer on the silicon substrate; and
a transducer on the piezoelectric layer.

2. The guided SAW device of claim 1 wherein a thickness of the piezoelectric layer in wavelengths is less than a maximum function which varies linearly and which is 25% when the velocity of wave propagation within the substrate is 6,000 m/s and 40% when the velocity of wave propagation within the substrate is 5,400 m/s.

3. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (100); and
the third Euler angle (ψ) is between 0°-180°.

4. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (110); and
the third Euler angle (ψ) is between 0°-180°.

5. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (111); and
the third Euler angle (ψ) is between 0°-180°.

6. The guided SAW device of claim 1 wherein the piezoelectric layer comprises lithium tantalate.

7. The guided SAW device of claim 6 wherein the transducer is an interdigital transducer comprising:
a first comb electrode comprising a first bus bar and a first plurality of electrode fingers extending transversely from the first bus bar; and
a second comb electrode comprising a second bus bar and a second plurality of electrode fingers extending transversely from the second bus bar such that:
the first bus bar is parallel to the second bus bar;
the first plurality of electrode fingers extend from the first bus bar towards the second bus bar;
the second plurality of electrode fingers extend from the second bus bar towards the first bus bar; and
the first plurality of electrode fingers are interleaved with the second plurality of electrode fingers.

8. The guided SAW device of claim 1 wherein the transducer is an interdigital transducer comprising:
a first comb electrode comprising a first bus bar and a first plurality of electrode fingers extending transversely from the first bus bar; and
a second comb electrode comprising a second bus bar and a second plurality of electrode fingers extending transversely from the second bus bar such that:
the first bus bar is parallel to the second bus bar;
the first plurality of electrode fingers extend from the first bus bar towards the second bus bar;
the second plurality of electrode fingers extend from the second bus bar towards the first bus bar; and
the first plurality of electrode fingers are interleaved with the second plurality of electrode fingers.

9. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (100); and
the third Euler angle (ψ) is between one of 0°-25°, 65°-115°, and 155°-180°.

10. The guided SAW device of claim 9 wherein the third Euler angle (ψ) is between one of 0°-7.5°, 82.5°-97.5°, and 172.5°-180°.

11. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (110); and
the third Euler angle (ψ) is between one of (30°-80°)+35.264° and (120°-170°)+35.264°.

12. The guided SAW device of claim 11 wherein the third Euler angle (ψ) is between one of (47.5°-62.5°)+35.264° and (137.5°-152.5°)+35.264°.

13. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (111); and
the third Euler angle (ψ) is between one of 15°-45°, 75°-105°, and 135°-165°.

14. The guided SAW device of claim 13 wherein the third Euler angle (ψ) is between one of 23°-43°, 77°-97°, and 143°-163°.

15. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (100); and
the third Euler angle (ψ) is between one of 0°-7.5°, 37.5°-52.5°, 82.5°-97.5°, 127.5°-142.5°, and 172.5°-180°.

16. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (110); and
the third Euler angle (ψ) is between one of (7.5° -22.5° +35.264°, (47.5°-62.5°)+35.264°, (87.5°-102.5°)+35.264°, and (137.5°-152.5°)+35.264°.

17. The guided SAW device of claim 1 wherein:
the first Euler angle (ϕ) and the second Euler angle (θ) are fixed according to Miller plane (111); and
the third Euler angle (ψ) is between one of 23°-43°, 77°-97°, and 143°-163°.

18. The guided SAW device of claim 1 wherein one or more layers are provided between the substrate and the piezoelectric layer.

19. The guided SAW device of claim 18 wherein a polysilicon layer is provided between the substrate and the piezoelectric layer to reduce carrier lifetimes in the substrate.

20. The guided SAW device of claim 18 wherein a layer of amorphous silicon is provided between the substrate and the piezoelectric layer to reduce carrier lifetimes in the substrate.

21. The guided SAW device of claim 1 wherein a surface of the substrate on which the piezoelectric layer is provided is modified to reduce carrier lifetimes in the substrate.

22. The guided SAW device of claim 21 wherein the surface of the substrate on which the piezoelectric layer is provided is subjected to ion implantation to reduce carrier lifetimes in the substrate.

Assignees

• Qorvo Us Inc

Inventors

• Inoue Shogo
• Solal Marc

Classifications

• H03H9/02566 Primary

  of semiconductor substrates · CPC title

• H03H9/02559

  of lithium niobate or lithium-tantalate substrates · CPC title

• H03H9/02574 Primary

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title

• H03H9/14564

  Shifted fingers transducers · CPC title

• H03H9/6433

  Coupled resonator filters · CPC title