Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11749510-B2
Application number	US-202117200414-A
Country	US
Kind code	B2
Filing date	Mar 12, 2021
Priority date	Jul 21, 2016
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

First claim

What is claimed is:

1. A plasma generating device, comprising:
a plurality of first rod-shaped electrodes connected to a high-frequency power supply;
a second rod-shaped electrode that is installed between the plurality of first rod-shaped electrodes, and is grounded; and
a buffer structure configured to form a buffer chamber that accommodates the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein high-frequency power is applied from the high-frequency power supply to one of the plurality of first rod-shaped electrodes to convert gas into plasma in a plasma generation region between the one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein high-frequency power is applied from the high-frequency power supply to another one of the plurality of first rod-shaped electrodes to convert gas into plasma in a plasma generation region between the another one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein the buffer structure includes, on a side wall surface of the buffer structure facing one or more side surfaces of one or more substrates:
at least one first gas supply port located between the one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode; and
at least one second gas supply port located between the another one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode.

2. The plasma generating device of claim 1 , wherein the at least one first gas supply port and the at least one second gas supply port are opened to face a center of the one or more substrates.

3. The plasma generating device of claim 1 , wherein the buffer structure is installed along a stacking direction of the one or more substrates from a lower portion to an upper portion of a process chamber where the one or more substrates are processed.

4. The plasma generating device of claim 3 , wherein the at least one first gas supply port includes a plurality of first gas supply ports, and the at least one second gas supply port includes a plurality of second gas supply ports,
wherein the plurality of first gas supply ports is installed from the lower portion of the process chamber to the upper portion of the process chamber, and
wherein the plurality of second gas supply ports is installed from the lower portion of the process chamber to the upper portion of the process chamber.

5. The plasma generating device of claim 1 , wherein the buffer structure is installed in a process chamber.

6. A substrate processing apparatus, comprising:
a process chamber in which one or more substrates are processed; and
a plasma generator configured to activate gas by converting the gas into plasma
wherein the plasma generator includes:
a plurality of first rod-shaped electrodes connected to a high-frequency power supply;
one or more second rod-shaped electrodes that are installed between the plurality of first rod-shaped electrodes, and are grounded; and
one or more buffer structures configured to form one or more buffer chambers that accommodate the plurality of first rod-shaped electrodes and the one or more second rod-shaped electrodes,

wherein the plasma generator is configured to:
apply high-frequency power to one of the plurality of first rod-shaped electrodes from the high-frequency power supply to convert the gas into the plasma in a plasma generation region between the one of the plurality of first rod-shaped electrodes and one of the one or more second rod-shaped electrodes; and
apply high-frequency power to another one of the plurality of first rod-shaped electrodes from the high-frequency power supply to convert the gas into the plasma in a plasma generation region between the another one of the plurality of first rod-shaped electrodes and the one of the one or more second rod-shaped electrodes, and

wherein the one or more buffer structures include, on one or more side wall surfaces of the one or more buffer structures facing one or more side surfaces of the one or more substrates:
at least one first gas supply port located between the one of the plurality of first rod-shaped electrodes and the one of the one or more second rod-shaped electrodes; and
at least one second gas supply port located between the another one of the plurality of first rod-shaped electrodes and the one of the one or more second rod-shaped electrodes.

7. The substrate processing apparatus of claim 6 , wherein the at least one first gas supply port and the at least one second gas supply port are opened to face a center of the one or more substrates.

8. The substrate processing apparatus of claim 6 , wherein a number of the plurality of first rod-shaped electrodes is larger than a number of the one or more second rod-shaped electrodes.

9. The substrate processing apparatus of claim 6 , further comprising:
a controller configured to control the high-frequency power supply,
wherein the controller controls the high-frequency power supply by monitoring an impedance of the plasma generator.

10. The substrate processing apparatus of claim 6 , wherein the one or more buffer structures include a plurality of buffer structures, and different reaction gases are supplied to the plurality of buffer structures, respectively.

11. The substrate processing apparatus of claim 6 , wherein the one or more buffer structures include a plurality of buffer structures, and the same reaction gas is supplied to the plurality of buffer structures.

12. The substrate processing apparatus of claim 6 , wherein the one or more buffer structures include a plurality of buffer structures, and the plurality of buffer structures are installed, with an exhaust system interposed between the plurality of buffer structures, in a line-symmetrical manner with respect to a line passing through the exhaust system and a center of the process chamber.

13. The substrate processing apparatus of claim 6 , wherein the one or more buffer structures are installed along a stacking direction of the one or more substrates from a lower portion to an upper portion of the process chamber.

14. The substrate processing apparatus of claim 13 , wherein the at least one first gas supply port includes a plurality of first gas supply ports, and the at least one second gas supply port includes a plurality of second gas supply ports,
wherein the plurality of first gas supply ports is installed from the lower portion of the process chamber to the upper portion of the process chamber, and
wherein the plurality of second gas supply ports is installed from the lower portion of the process chamber to the upper portion of the process chamber.

15. The substrate processing apparatus of claim 6 , wherein the one or more buffer structures are installed in the process chamber.

16. A method of manufacturing a semiconductor device, comprising:
accommodating a substrate in a process chamber;
converting gas into plasma by a plasma generator including:
a plurality of first rod-shaped electrodes connected to a high-frequency power supply,
a second rod-shaped electrode that is installed between the plurality of first rod-shaped electrodes, and is grounded, and
a buffer structure configured to form a buffer chamber that accommodates the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and including, on a side wall surface of the buffer structure facing a side surface of the substrate:
a first gas supply port located between one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode;

Assignees

• Kokusai Electric Corp

Inventors

• Sato Akihiro
• Takeda Tsuyoshi
• Hirochi Yukitomo

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title