Array of single-photon avalanche diode (SPAD) microcells and operating the same
US-11340109-B2 · May 24, 2022 · US
US11747194B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11747194-B2 |
| Application number | US-202117799804-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2021 |
| Priority date | Feb 14, 2020 |
| Publication date | Sep 5, 2023 |
| Grant date | Sep 5, 2023 |
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The photomultiplier includes a set of macrocells, each comprising at least two microcells, each being connected to an output node according to an OR diagram, and achieving great energy efficiency upon deactivating each of the microcells when these are activated almost simultaneously, and that otherwise would have been masked by the OR diagram. To this end, each of the microcells comprises an active quenching and recharge circuit; an avalanche diode; a first deactivation transistor with its gate connected to an external processor, and its drain and source associated with the active quenching and recharge circuit; a second deactivation transistor with its gate connected to an external processor, and its source associated with the active quenching and recharge circuit.
Opening claim text (preview).
The invention claimed is: 1. An OR pulse combination digital photomultiplier, comprising at least one macrocell, each of which comprises at least two microcells, each of the microcells being connected to an output node according to an OR diagram and each of the microcells comprising: an active quenching and recharge circuit, an active recharge activation point associated with the active quenching and recharge circuit, an avalanche diode sensitive to a single photon, with an anode connected to the active quenching and recharge circuit, a first deactivation transistor with a gate connected to an external processor, and a drain and source associated with the active quenching and recharge circuit, a second deactivation transistor with a gate connected to an external processor, a drain connected to the output node and a source associated with the active quenching and recharge circuit. 2. The photomultiplier of claim 1 , wherein the at least one macrocell further comprises a high-level attachment transistor with a drain connected to the output node. 3. The photomultiplier of claim 1 , wherein the active quenching and recharge circuit comprises: a first transistor with a gate connected to the source of the second deactivation transistor, a drain connected to the anode of the avalanche diode and a source connected to a junction node between microcells, a second transistor with a gate connected to the source of the second deactivation transistor, a drain connected to the drain of the first deactivation transistor and a source connected to an activation voltage, a third transistor with a gate connected to the active recharge activation point, a drain connected to the source of the first deactivation transistor and a source connected to the junction node between microcells, and a fourth transistor with a gate connected to the drain of the first and second transistors, a drain connected to the source of the second activation transistor and a source connected to earth. 4. The photomultiplier of claim 1 , wherein the at least one macrocell further comprises a monostable for generating an active recharge signal connected to the active recharge activation point.
for devices working in avalanche mode · CPC title
Electric circuits {(for command of an exposure part G03B7/02)} · CPC title
PMT · CPC title
Avalanche · CPC title
Single-photon detection or photon counting · CPC title
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