Method for forming thin film

Patent metadata

Field	Value
Publication number	US-11746411-B2
Application number	US-202016734419-A
Country	US
Kind code	B2
Filing date	Jan 6, 2020
Priority date	Sep 25, 2019
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of:
i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed.

A n B m X o   [Chemical Formula 1]
wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.

According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.

First claim

What is claimed is:

1. A method for forming a thin film comprising steps of:
i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and

ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed:
A n B m X o   [Chemical Formula 1]

wherein A is carbon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1,
wherein the growth inhibitor comprises one or more selected from the group consisting of 2-chloro-2-methylbutane, n-butyl chloride, 2-chloropropane, 1,2,3-trichloropropane, 2-methyl-1-pentane and 1,2-dichlorobenzene.

2. The method for forming a thin film of claim 1 , wherein in the step of i) adsorbing the growth inhibitor for forming a thin film on the surface of the substrate, a feeding time for the growth inhibitor is 1 to 10 seconds.

3. The method for forming a thin film of claim 1 , wherein the step of i) adsorbing the growth inhibitor for forming a thin film on the surface of the substrate comprises a step of injecting the growth inhibitor for forming a thin film into an atomic layer deposition (ALD) chamber and adsorbing the growth inhibitor onto a surface of a loaded substrate.

4. The method for forming a thin film of claim 1 , wherein the step of i) adsorbing the growth inhibitor for forming a thin film on the surface of the substrate comprises a step of purging a remaining inhibitor unadsorbed on the surface of the substrate for forming the thin film with a purge gas.

5. The method for forming a thin film of claim 1 , wherein the step of ii) adsorbing a Ti-based thin film precursor comprises a step of purging the remaining unadsorbed Ti-based thin film precursor with a purge gas.

6. The method for forming a thin film of claim 1 , further comprising steps of supplying a reaction gas after adsorption of a Ti-based thin film precursor on the surface of the substrate, and purging reaction byproducts of the Ti-based thin film precursor and the reaction gas with a purge gas.

7. The method for forming a thin film of claim 6 , wherein the reaction gas comprises a reducing agent, a nitriding agent, or an oxidizing agent.

8. The method for forming a thin film of claim 1 , wherein the growth inhibitor for forming a thin film and the Ti-based thin film precursor are transferred into an ALD chamber by a vapor flow control (VFC) method, a delivery liquid injection (DLI) method, or a liquid delivery system (LDS) method.

9. The method for forming a thin film of claim 1 , wherein a ratio of a feeding amount (mg/cycle) between the growth inhibitor for forming a thin film and the Ti-based precursor in an ALD chamber is from 1:1.5 to 1:20.

10. The method for forming a thin film of claim 1 , wherein X is chlorine (Cl).

11. The method for forming a thin film of claim 1 , wherein o is an integer from 1 to 5.

12. The method for forming a thin film of claim 1 , wherein the compound represented by Chemical Formula 1 is a branched, cyclic or aromatic compound.

13. The method for forming a thin film of claim 1 , wherein the compound represented by Chemical Formula 1 is a liquid at room temperature, and has a density of 0.8 to 1.5 g/cm 3 , a vapor pressure at 20° C. of 1 to 300 mmHg, and solubility in water at 25° C. of 200 mg/L or less.

14. The method for forming a thin film of claim 1 , wherein a reduction rate of a thin film growth rate (Å/cycle) per cycle calculated by the following Equation 1 is −5% or less:
Reduction rate of thin film growth rate per cycle (%)=[(thin film growth rate per cycle when growth inhibitor for forming thin film is used−thin film growth rate per cycle when growth inhibitor for forming thin film is not used)/thin film growth rate per cycle when growth inhibitor for forming thin film is not used]×100  [Equation 1].

15. The method for forming a thin film of claim 1 , wherein a residual halogen intensity (c/s) of the thin film formed after 200 cycles, which is measured based on Secondary Ion Mass Spectrometry, is 10,000 or less.

Assignees

• Soulbrain Co Ltd

Inventors

• Yeon Changbong
• Jung Jaesun
• Byun Hyeran
• Song Taeho
• Kim Sojung
• Lee Seokjong

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/6512

  by exposure to a gas or vapour · CPC title