CMP slurry composition for copper films and method of polishing copper films using the same

Patent metadata

Field	Value
Publication number	US-11746258-B2
Application number	US-202017072385-A
Country	US
Kind code	B2
Filing date	Oct 16, 2020
Priority date	Oct 18, 2019
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,

First claim

What is claimed is:

1. A chemical mechanical polishing (CMP) slurry composition for copper films, the composition comprising:
a polar solvent or a non-polar solvent; and
polishing particles modified using a silicon-containing compound,
wherein the silicon-containing compound is represented by Formula 1,

wherein, in Formula 1,
R 1 , R 2 and R 3 are each independently a hydroxyl group, a substituted or unsubstituted alkoxy group, or a halogen;
R 4 is a substituted or unsubstituted bivalent organic group;
X 1 and X 2 are each independently hydrogen, —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + , a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group free from —(C═O)O − M + , or a substituted or unsubstituted aromatic hydrocarbon group free from —(C═O)O − M + ,
M + is H + or a monovalent cation of an alkali metal,
at least one of X 1 and X 2 is —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + , or a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O − M + .

2. The CMP slurry composition for copper films as claimed in claim 1 , wherein:
R 4 is a substituted or unsubstituted C 1 to C 10 alkylene group, and
at least one of X 1 and X 2 is a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + .

3. The CMP slurry composition for copper films as claimed in claim 1 , wherein the silicon-containing compound represented by Formula 1 includes a silicon-containing compound represented by one of Formula 1-1 to Formula 1-4:
(OC 2 H 5 ) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + )  [Formula 1-1]

(OH) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + )  [Formula 1-2]

(OCH 3 ) 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2   [Formula 1-3]

Cl 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 ,  [Formula 1-4]

wherein, in Formulae 1-1 to 1-4, M + is defined the same as that of Formula 1.

4. The CMP slurry composition for copper films as claimed in claim 1 , wherein the polishing particles include silica.

5. The CMP slurry composition for copper films as claimed in claim 1 , wherein the polishing particles modified using the silicon-containing compound represented by Formula 1 are present in an amount of about 0.001 wt % to about 20 wt %, based on a total weight of the CMP slurry composition.

6. The CMP slurry composition for copper films as claimed in claim 1 , wherein the CMP slurry composition has a pH of 5 to 9.

7. The CMP slurry composition for copper films as claimed in claim 1 , further comprising a complexing agent, a corrosion inhibitor, an oxidizing agent, or a pH adjusting agent.

8. A method of polishing a copper film using the CMP slurry composition for copper films as claimed in claim 1 .

9. The method as claimed in claim 8 , wherein:
R 4 is a substituted or unsubstituted C 1 to Cm alkylene group, and
at least one of X 1 and X 2 is a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + .

10. The method as claimed in claim 8 , wherein the silicon-containing compound represented by Formula 1 includes a silicon-containing compound represented by one of Formula 1-1 to Formula 1-4:
(OC 2 H 5 ) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + )  [Formula 1-1]

(OH) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + )  [Formula 1-2]

(OCH 3 ) 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2   [Formula 1-3]

Cl 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 ,  [Formula 1-4]

wherein Formulae 1-1 to 1-4, M + is defined the same as that of Formula 1.

11. The method as claimed in claim 8 , wherein the polishing particles include silica.

12. The method as claimed in claim 8 , wherein the polishing particles modified using the silicon-containing compound represented by Formula 1 are present in in the composition in an amount of about 0.001 wt % to about 20 wt %, based on a total weight of the CMP slurry composition.

13. The method as claimed in claim 8 , wherein the CMP slurry composition has a pH of 5 to 9.

14. The method as claimed in claim 8 , wherein the composition further includes a complexing agent, a corrosion inhibitor, an oxidizing agent, or a pH adjusting agent.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Kim Hyeong Mook
• Jang Keun Sam
• Kang Dong Hun
• Lee Jong Won

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K13/06

  with organic material · CPC title

• C23F3/00

  Brightening metals by chemical means · CPC title

• H01L21/3212

  Electricity · mapped topic