Light-emitting device and apparatus including same

US11744100B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11744100-B2
Application numberUS-202117226231-A
CountryUS
Kind codeB2
Filing dateApr 9, 2021
Priority dateApr 9, 2020
Publication dateAug 29, 2023
Grant dateAug 29, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m−1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

First claim

Opening claim text (preview).

What is claimed is: 1. A light-emitting device comprising: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m−1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material. 2. The light-emitting device of claim 1 , wherein the n-type organic compound included in the n-type charge generating layer includes: a phenanthrene-based compound or a phosphine oxide-based compound. 3. The light-emitting device of claim 1 , wherein the metal material included in in the n-type charge generating layer has at least one metal selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal. 4. The light-emitting device of claim 1 , wherein the metal material included in the n-type charge generating layer has at least one component selected from lithium (Li), sodium (Na), a Bi—Li alloy, a Bi—Na alloy, ytterbium (Yb), samarium (Sm), europium (Eu), terbium (Tb), holmium (Ho), and dysprosium (Dy). 5. The light-emitting device of claim 1 , wherein a binding energy between the n-type organic compound and the metal material included in the n-type charge generating layer is 1.25 electron volts (eV) or higher. 6. The light-emitting device of claim 1 , wherein a volume ratio of the n-type organic compound to the metal material included in the n-type charge generating layer is in a range of about 99.9:0.1 to about 80:20. 7. The light-emitting device of claim 1 , wherein the inorganic semiconductor material included in the p-type charge generating layer and the inorganic semiconductor material included in the p-type hole injection layer are each independently a post-transition metal, tellurium, a halide of a transition metal, a halide of a post-transition metal, a telluride of a transition metal, a telluride of a post-transition metal, a sulfide of a transition metal, a sulfide of a post-transition metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof. 8. The light-emitting device of claim 1 , wherein the p-type charge generating layer and the p-type hole injection layer each independently further include a hole transporting organic compound. 9. The light-emitting device of claim 8 , wherein the hole transporting organic compound included in the p-type charge generating layer and the hole transporting organic compound included in the p-type hole injection layer each independently have at least one selected from a compound represented by Formula 201 and a compound represented by Formula 202: wherein, in Formulae 201 and 202, L 201 to L 204 are each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, L 205 is selected from *—O—*′, *—S—*′, *—N(Q 201 )-*′, a substituted or unsubstituted C 1 -C 20 alkylene group, a substituted or unsubstituted C 2 -C 20 alkenylene group, a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, xa1 to xa4 are each independently an integer from 0 to 3, xa5 is an integer from 1 to 10, and R 201 to R 204 and Q 201 are each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. 10. The light-emitting device of claim 8 , wherein a volume ratio of the hole transporting organic compound to the inorganic semiconductor material in the p-type charge generating layer and a volume ratio of the hole transporting organic compound to the inorganic semiconductor material in the p-type hole injection layer are each independently in a range of about 99.9:0.1 to about 80:20. 11. The light-emitting device of claim 1 , wherein a m th emission unit that is a m th emission unit from the first electrode among the m emission units includes a m th hole transport region, a m th emission layer, and a m th electron transport region, and the m th electron transport region includes an inorganic insulating material. 12. The light-emitting device of claim 11 , wherein the m th electron transport region includes an n-type electron injection layer, and the n-type electron injection layer includes the inorganic insulating material. 13. The light-emitting device of claim 12 , wherein the n-type electron injection layer is in direct contact with the second electrode. 14. The light-emitting device of claim 11 , wherein the inorganic insulating material includes a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof. 15. The light-emitting device of claim 12 , wherein the n-type electron injection layer consists of the inorganic insulating material. 16. The light-emitting device of claim 12 , wherein the n-type electron injection layer further includes a metal dopant, and the metal dopant includes at least one selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal. 17. The light-emitting device of claim 16 , wherein the metal dopant is selected from ytterbium (Yb), samarium (Sm), lithium (Li), and magnesium (Mg). 18. The light-emitting device of claim 16 , wherein a volume ratio of

Assignees

Inventors

Classifications

  • Carrier injection layers · CPC title

  • Active-matrix OLED [AMOLED] displays · CPC title

  • H10K50/171Primary

    Electron injection layers · CPC title

  • H10K50/19Primary

    Tandem OLEDs · CPC title

  • comprising aluminium, e.g. Alq3 · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11744100B2 cover?
A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other,…
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10K50/171. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 29 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).