Array Substrate, Method for Manufacturing the Same, and Display Device
US-2016254296-A1 · Sep 1, 2016 · US
US11740526B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11740526-B2 |
| Application number | US-202217713715-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 5, 2022 |
| Priority date | Oct 30, 2019 |
| Publication date | Aug 29, 2023 |
| Grant date | Aug 29, 2023 |
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A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.
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What is claimed is: 1. A display device, comprising: a thin film transistor disposed on a base substrate; and a signal wiring electrically connected to the thin film transistor, the signal wiring including: a main conductive layer including copper; and a capping layer including titanium directly on the main conductive layer, the capping layer overlapping at least a portion of an upper surface of the main conductive layer, wherein the signal wiring has a taper angle in a range of about 70° to about 90°, a thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å. 2. The display device of claim 1 , wherein the signal wiring includes an adhesion-improving layer including at least one of titanium, molybdenum and tungsten and disposed directly below the main conductive layer. 3. The display device of claim 2 , wherein a thickness of the adhesion-improving layer is in a range of about 50 Å to about 500 Å. 4. The display device of claim 2 , wherein the signal wiring is disposed directly on an ohmic contact layer that reduces a contact resistance with a source or drain electrode of the thin film transistor. 5. The display device of claim 1 , wherein the capping layer overlaps an entire upper surface of the main conductive layer. 6. A display device comprising: a thin film transistor disposed on base substrate; and a signal wiring electrically connected to the thin film transistor, the signal wiring including: a main conductive layer including copper; and a capping layer including titanium directly on the main conductive layer, the capping layer overlapping at least a portion of an upper surface of the main conductive layer, wherein the signal wiring has a taper angle in a range of about 70° to about 90°, a thickness of the capping layer is in a range of about 100| to about 300 Å, and a thickness of the main conductive lay is in a range of about 1,000 Å to about 20,000 Å, wherein the main conductive layer includes a first portion and a second portion, the first portion and the second portion having different taper angles from each other and consisting of a same material. 7. The display device of claim 6 , wherein the first portion is disposed on the second portion, and a first taper angle of the first portion is larger than a second taper angle of the second portion. 8. The display device of claim 1 , wherein the signal wiring includes: a data line electrically connected to a source electrode of the thin film transistor, or a gate line electrically connected to a gate electrode of the thin film transistor. 9. The display device of claim 1 , wherein a taper angle of the main conductive layer is different from a taper angle of the capping layer.
in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title
Interconnections, e.g. scanning lines · CPC title
Multilayer wirings · CPC title
Wiring, e.g. gate line, drain line · CPC title
Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title
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