Harvesting energy in an integrated circuit using the seebeck effect

Patent metadata

Field	Value
Publication number	US-11737362-B2
Application number	US-201616074151-A
Country	US
Kind code	B2
Filing date	Apr 1, 2016
Priority date	Apr 1, 2016
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

An apparatus includes a first semiconductor fin and a second semiconductor fin that is parallel to the first semiconductor fin. The first semiconductor fin extends from a first region of a substrate near a circuit that produces thermal energy when a circuit is in operation to a second region of the substrate, which is disposed away from the circuit. The second semiconductor fin extends from the first region to the second region and has a different material composition than the first semiconductor fin. The first and second semiconductor fins collectively exhibit a Seebeck effect when the circuit is in operation. The apparatus includes interconnects to couple the first and second semiconductor fins to a power supply circuit to transfer electricity generated due to the Seebeck effect to the power supply circuit.

First claim

What is claimed is:

1. An apparatus comprising:
a transistor;
a plurality of semiconductor fins,
wherein:
the plurality of semiconductor fins comprise a first semiconductor fin and a second semiconductor fin,
the first semiconductor fin and the second semiconductor fin correspond to remnants of a process to fabricate the transistor and are not part of the transistor,
the first semiconductor fin extends from a first region of a substrate near a first circuit that produces thermal energy when the first circuit is in operation to a second region of the substrate away from the first circuit,
the second semiconductor fin is parallel to the first semiconductor fin,
the second semiconductor fin extends from the first region to the second region and has a different material composition relative to the first semiconductor fin, and
the first and second semiconductor fins collectively exhibit a Seebeck effect when the first circuit is in operation;
interconnects to couple the first and second semiconductor fins to a power supply circuit to transfer electricity generated due to the Seebeck effect to the power supply circuit; and

a metal finger capacitor formed in the substrate and electrically coupled to the first and second semiconductor fins.

2. The apparatus of claim 1 , further comprising a diode formed in the substrate and electrically coupled between the capacitor and a power supply rail of the power supply circuit.

3. The apparatus of claim 1 , further comprising a transistor formed in the substrate and comprising a controlled current path electrically coupled between the capacitor and a power supply rail of the power supply circuit.

Assignees

• Intel Corp

Inventors

• Phoa Kinyip
• Lin Jui-Yen
• Nidhi Nidhi
• Jan Chia-Hong

Classifications

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10N10/10 Primary

  operating with only the Peltier or Seebeck effects · CPC title

• H01L29/785

  Electricity · mapped topic

• H10N10/17

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• H10N10/81 Primary

  Structural details of the junction · CPC title