Active gate voltage control circuit for burst mode and protection mode operation of power switching transistors

Patent metadata

Field	Value
Publication number	US-11736100-B2
Application number	US-202117308423-A
Country	US
Kind code	B2
Filing date	May 5, 2021
Priority date	May 5, 2021
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

An active gate voltage control circuit for a gate driver of a power semiconductor switching device comprising a power semiconductor transistor, such as a GaN HEMT, provides active gate voltage control comprising current burst mode operation and protection mode operation. The gate-source turn-on voltage Vgs(on) is increased in burst mode operation, to allow for a temporary increase of saturation current. In protection mode operation, a multi-stage turn-off may be implemented, comprising reducing Vgs(on) to implement fast soft turn-off, followed by full turn-off to bring Vgs(on) below threshold voltage, to reduce switching transients such as Vds spikes. Circuits of example embodiments provide for burst mode operation for enhanced saturation current, to increase robustness of enhancement mode GaN power switching devices, e.g. under overcurrent and short circuit conditions, or to provide active gate voltage control which adjusts dynamically to specific operating conditions or events.

First claim

The invention claimed is:

1. An active gate voltage control circuit for a power semiconductor transistor comprising:
a sensing circuit for monitoring an on-state operational parameter of the power semiconductor transistor and generating a sense output signal indicative of the on-state operational parameter; and
first logic circuitry configured to compare the sense output signal with a first reference signal (Sense ref1 ) and generating a first control signal to implement burst mode operation when the sense output signal is ≥Sense ref1 , wherein: burst mode operation comprises outputting the first control signal to a gate driver of the power semiconductor transistor to increase a gate-source voltage to enable an increased saturation current when the sense output signal is ≥Sense ref1 .

2. The active gate voltage control circuit of claim 1 , comprising second logic circuitry configured to compare the sense output signal with a second reference signal (Sense ref2 ) and generate a second control signal for implementing protection mode when the sense output signal is ≥Sense ref2 , wherein: protection mode operation comprises outputting the second control signal to the gate driver to reduce the gate-source voltage when the sense output signal is ≥Sense ref2 .

3. The active gate voltage control circuit of claim 2 , wherein the first and second reference signals Sense ref1 and Sense ref2 are selected to maintain the turn-on gate-source voltage in a range that enables the increased saturation current to be implemented temporarily for dynamic performance management.

4. The active gate voltage control circuit of claim 1 , comprising second logic circuitry configured to compare the sense output signal with a second reference signal (Sense ref2 ) and generate a second control signal for implementing protection mode when the sense output signal is ≥Sense ref2 , wherein: protection mode operation comprises outputting the second control signal to the gate driver to reduce the gate-source voltage when the sense output signal is ≥Sense ref2 and implement at least one of single-stage turn-off and multi-stage turn-off of the power semiconductor transistor.

5. The active gate voltage control circuit of claim 4 , wherein Sense ref1 and Sense ref2 are selected to maintain the turn-on gate-source voltage in a range that enables the increased saturation current to be implemented temporarily for dynamic performance management without precipitating early device failure.

6. The active gate voltage control circuit of claim 4 , wherein the second logic circuitry is configured to implement multi-stage turn-off, by reducing the gate-source voltage of the power transistor to implement fast soft turn-off, followed by a delay before reducing the gate-source voltage to below a gate-source threshold voltage for full turn-off of the gate of the power semiconductor transistor.

7. The active gate voltage control circuit of claim 6 , for operation of a power semiconductor switching device comprising an E-mode GaN HEMT, comprising:
wherein the sensing circuit comprises a drain-source voltage sensing circuit for sensing a drain-source on-voltage V ds(on) , and the gate driver is configured to provide a first gate-source turn-on voltage V gs(on) for normal operation and a gate-source turn-off voltage V gs(off) of 0V or a negative bias, wherein:
when the drain-source voltage V ds(on) reaches or exceeds a first voltage reference V ref1 , the gate-source turn-on voltage is increased to a second gate turn-on voltage V gs(on-boost) , which is several volts greater than the first gate turn-on voltage, to the implement burst mode operation; and
when the drain source voltage V ds(on) reaches or exceeds a second voltage reference V ref2 , the gate-source turn-on voltage is first reduced to several volts below the first gate turn-on voltage V gs(on) , to implement soft turn-off, and then reduced to the gate-source turn-off voltage, to fully turn-off the gate of the power semiconductor transistor.

8. An active gate voltage control circuit for a power semiconductor transistor comprising:
a gate driver having power supply inputs V DD and V EE , an input for receiving a gate drive control signal and an output for outputting a gate-source turn-on voltage (V gs(on) ) and a gate drive turn-off voltage (V gs(off) ),
a detection circuit for monitoring a drain-source on-voltage V ds(on) of the power semiconductor transistor and generating an output voltage signal V measure indicative of V ds(on) ;
a first reference voltage input providing a first reference voltage V ref1 for implementing burst mode operation;
a second reference voltage input providing a second reference voltage V ref2 for implementing protection mode operation, where V ref2 is greater than V ref1 ;
first logic circuitry configured to compare the output signal voltage V measure with the first reference voltage V ref1 and generate a first control signal when V measure is ≥V ref1 , the first control signal being output to the gate driver to implement burst mode operation comprising increasing the turn-on gate voltage when V measure is ≥V ref1 ;
second logic circuitry configured to compare the output signal voltage V measure with the second reference voltage V ref2 and generate a second control signal when V measure is ≥V ref2 ; the second control signal being output to the gate driver to implement protection mode operation comprising reducing the turn-on gate-source voltage when V measure is ≥V ref2 .

9. The active gate voltage control circuit of claim 8 , wherein the second logic circuitry is configured to implement multi-stage turn-off, by reducing the gate-source voltage V gs(on) of the power transistor to a soft turn-off voltage V gs(soft turn-off) for soft turn-off, followed by a delay before reducing the gate-source voltage to below a threshold voltage for full turn-off of the gate of the power semiconductor transistor.

10. The active gate voltage control circuit of claim 8 , wherein the drain voltage sensing circuit is integrated with the power semiconductor transistor and the first and second logic circuits are integrated with the gate driver.

11. The active gate voltage control circuit of claim 8 , for operation of a power semiconductor switching device comprising an E-mode GaN HEMT, configured to provide a turn-on gate-source voltage V gs(on) of 6V for normal operation and a turn-off gate-source voltage V gs(off) of 0V or a negative bias, wherein when the drain-source voltage V ds reaches or exceeds V ref1 , the gate-source turn-on voltage is increased to 8V to implement burst mode and allow for a higher saturation current, and when the drain source voltage V ds reaches or exceeds V ref2 , the gate turn-on voltage is reduced to 4V, to implement soft turn-off, and then reduced to 0V, or below, to fully turn-off the gate of the power semiconductor transistor.

12. The active gate voltage control circuit of claim 11 , wherein the first reference voltage V ref1 is 4V and the second reference voltage V ref2 is 8V.

13. The active gate voltage control circuit of claim 8 , wherein the gate driver provides bipolar driving and a voltage divider arrangement of first and second Zener diodes with active control of a transistor in series with the first Zener diode for providing a first turn-on gate-source voltage V gs(on) for normal operation and the second Zener diode providing a second turn-on gate-source voltage V gs(boost) for burst mode operation.

14. The active gate voltage control circuit of claim 8 wherein the gate driver comprises an adjustable low drop out regulator (LDO) with unipolar driving and the fi

Assignees

• Gan Systems Inc

Inventors

• Hou Ruoyu
• Lu Juncheng
• Spaziani Larry

Classifications

• H03K17/08122 Primary

  in field-effect transistor switches · CPC title

• H03K17/163

  Soft switching · CPC title