Bipolar junction transistor heater circuit

Patent metadata

Field	Value
Publication number	US-11735902-B2
Application number	US-202016828336-A
Country	US
Kind code	B2
Filing date	Mar 24, 2020
Priority date	Mar 24, 2020
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

An integrated circuit (IC) heater circuit comprises a drive circuit configured to increase the temperature of the IC when consuming power; a temperature sensor coupled to a control node of the drive circuit to activate and deactivate the drive circuit to provide an ambient temperature for the IC, wherein current of the temperature sensor varies with temperature; and a control circuit coupled to the temperature sensor and configured to adjust variation in the temperature sensitivity of the current of the temperature sensor.

First claim

What is claimed is:

1. An integrated circuit (IC) heater circuit comprising:
a drive circuit configured to increase the temperature of the IC when consuming power;
a temperature sensor coupled to a control node of the drive circuit to activate and deactivate the drive circuit to provide an ambient temperature for the IC, wherein current of the temperature sensor varies with temperature, wherein the temperature sensor is configured to provide a pull down current that increases with temperature to the control node of the drive circuit; and
a control circuit coupled to the temperature sensor and configured to adjust variation in the temperature sensitivity of the current of the temperature sensor, wherein the control circuit is configured to provide circuit feedback to the temperature that varies inversely with the pull down current of the temperature sensor.

2. The IC heater circuit of claim 1 ,
wherein the temperature sensor includes a bipolar junction transistor (BJT) coupled to the control node of the drive circuit that provides the pull down current that varies with temperature to the control node; and
wherein the control circuit includes a bias circuit configured to apply a bias voltage to a base region of the BJT, and the bias circuit is configured to vary the bias voltage of the bias circuit with temperature inversely to the pull down current of the BJT.

3. The IC heater circuit of claim 2 , wherein the bias circuit includes a pinch resistor having a resistance that varies with temperature.

4. The IC heater circuit of claim 2 , wherein the bias circuit includes a resistive divider circuit configured to generate the bias voltage at the base region of the BJT, wherein the resistive divider circuit includes a pinch resistor having a resistance that varies with temperature and the bias voltage generated by the resistive divider circuit varies inversely to a temperature variation of a component of the pull down current of the BJT.

5. The IC heater circuit of claim 4 ,
wherein the temperature of the IC produced by the drive circuit is determined by the size of the BJT.

6. The IC heater circuit of claim 1 , including:
a resistive circuit;
wherein the drive circuit is configured to apply a drive current to the resistive circuit to increase temperature of the IC; and
wherein the temperature sensor is configured to reduce the drive current of the drive circuit with increase in temperature.

7. An integrated circuit (IC) comprising:
a voltage reference circuit; and
an IC heater circuit, the IC heater circuit including:
a drive circuit including a resistive circuit load, wherein the drive circuit is configured to increase the temperature of the IC by applying a drive current to the resistive circuit load;
a temperature sensor coupled to a control node of the drive circuit to activate and deactivate the drive circuit to produce an ambient temperature for the IC, wherein current of the temperature sensor varies with temperature, wherein the temperature sensor is configured to provide a pull down current that increases with temperature to the control node of the drive circuit; and
a control circuit coupled to the temperature sensor and configured to adjust variation in the temperature sensitivity of the current of the temperature sensor to reduce variation in the produced ambient temperature, wherein the control circuit is configured to provide circuit feedback to the temperature that varies inversely with the pull down current of the temperature sensor.

8. The IC of claim 7 ,
wherein the temperature sensor includes a bipolar junction transistor (BJT) coupled to the control node of the drive circuit that provides the pull down current to the control node that varies with temperature; and
wherein the control circuit includes a bias circuit configured to apply a bias voltage to a base region of the BJT, and the bias circuit is configured to vary the bias voltage of the bias circuit with temperature inversely to the pull down current of the BJT.

9. The IC of claim 8 , wherein the bias circuit includes a pinch resistor having a resistance that varies with temperature proportional to the pull down current of the BJT.

10. The IC of claim 8 , wherein the bias circuit includes a resistive divider circuit configured to generate the bias voltage at the base region of the BJT, wherein the resistive divider circuit includes a pinch resistor having a resistance that varies with temperature proportional to a component of the pull down current of the BJT.

11. The IC of claim 8 , wherein the drive circuit turns on before the BJT transistor upon a circuit startup, and the bias voltage generated by the bias circuit is less than a turn on voltage of the BJT at the circuit startup.

Assignees

• Analog Devices International Unlimited Co

Inventors

• Kahaei Aref
• Sousae James Vincent
• Nelson Carl T
• Dobkin Robert

Classifications

• H02H5/044 Primary

  using a semiconductor device to sense the temperature · CPC title

• G01K7/01

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• G06F1/206

  comprising thermal management · CPC title

• G05D23/2401 Primary

  using a heating element as a sensing element · CPC title

• G06F1/20

  Cooling means · CPC title