Light-emitting diode, and light-emitting diode package, light-emitting diode module and display device including the same

Patent metadata

Field	Value
Publication number	US-11735696-B2
Application number	US-202017072223-A
Country	US
Kind code	B2
Filing date	Oct 16, 2020
Priority date	Oct 18, 2019
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

First claim

What is claimed is:

1. A light-emitting diode, comprising:
a light-transmissive substrate which has a first surface;
an epitaxial structure which is disposed on said first surface of said light-transmissive substrate, and which has an upper surface opposite to said first surface, and a side wall interconnecting said upper surface and said first surface;
a first insulation layer which covers said side wall and said upper surface of said epitaxial structure; and
a second insulation layer which covers a portion of said first surface of said light-transmissive substrate that is exposed from said epitaxial structure and said first insulation layer, said second insulation layer having a light transmittance greater than that of said first insulation layer, and being formed with at least one opening exposing said first surface.

2. The light-emitting diode according to claim 1 , wherein said first and second insulation layers are made of an identical material, and said first insulation layer has a thickness that is greater than a thickness of said second insulation layer.

3. The light-emitting diode according to claim 2 , wherein the thickness of said second insulation layer is not greater than 50 nm.

4. The light-emitting diode according to claim 2 , wherein each of said first and second insulation layers is made of a material selected from the group consisting of an oxide of silicon, a nitride of silicon, magnesium fluoride, and Al 2 O 3 .

5. The light-emitting diode according to claim 1 , wherein said first insulation layer includes an upper covering part and a side covering part which respectively cover said upper surface and said side wall of said epitaxial structure, said upper covering part has a geometric thickness represented by a formula of 2kλ/4n, where k is a positive integer, λ is a wavelength of light emitted from said epitaxial structure, and n is a refractive index of said first insulation layer.

6. The light-emitting diode according to claim 1 , wherein said second insulation layer has a geometric thickness represented by a formula of (2k−1)λ/4n, where k is a positive integer, λ is a wavelength of light emitted from said epitaxial structure, and n is a refractive index of said second insulation layer.

7. The light-emitting diode according to claim 1 , wherein said first and second insulation layers are made of different materials.

8. The light-emitting diode according to claim 7 , wherein said first insulation layer is a distributed Bragg reflector structure which includes multiple pairs of layers, each pair including a first layer having a first refractive index and a second layer having a second refractive index lower than the first refractive index, said first layers and said second layers in the distributed Bragg reflector structure being alternately-stacked.

9. The light-emitting diode according to claim 8 , wherein each of said first layers is made of a material selected from the group consisting of TiO 2 and Ti 2 O 5 , and each of said second layers is made of a material selected from the group consisting of an oxide of silicon and a fluoride of magnesium.

10. The light-emitting diode according to claim 7 , wherein said second insulation layer is made of a material selected from the group consisting of an oxide of silicon, a nitride of silicon, magnesium fluoride, and Al 2 O 3 .

11. The light-emitting diode according to claim 7 , wherein said second insulation layer has a single-layer structure.

12. The light-emitting diode according to claim 7 , wherein said second insulation layer further includes an extension covering part which covers said upper surface and said side wall of said epitaxial structure, and which is disposed between said epitaxial structure and said first insulation layer.

13. The light-emitting diode according to claim 1 , wherein said first insulation layer includes an upper covering part and a side covering part which covers said upper surface and said side wall of said epitaxial structure, and a geometric thickness of said upper covering part along a direction perpendicular to said upper surface is different from a geometric thickness of said side covering part along a direction perpendicular to said side wall.

14. The light-emitting diode according to claim 13 , wherein the thickness of said side covering part is 40% to 90% of the thickness of said upper covering part.

15. The light-emitting diode according to claim 1 , wherein said first surface of said light-transmissive substrate has a length that ranges from 40 μm to 300 μm.

16. The light-emitting diode according to claim 1 , wherein:
said epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are sequentially disposed on said first surface of said light-transmissive substrate in such order;
said first insulation layer is formed with a first hole to expose said first-type semiconductor layer, and a second hole to expose said upper surface; and
said light-emitting diode further comprises a first electrode and a second electrode, said first electrode being formed in said first hole and being electrically connected to said first-type semiconductor layer, said second electrode being formed in said second hole and being electrically connected to said second-type semiconductor layer.

17. The light-emitting diode according to claim 16 , wherein said epitaxial structure further includes a contact electrode which is disposed between said second-type semiconductor layer and said first insulation layer.

18. The light-emitting diode according to claim 1 , wherein said opening is formed in one of a loop shape, a strip shape, and a pinhole shape.

19. The light-emitting diode according to claim 1 , wherein said opening has a diameter ranging from 2 μm to 10 μm.

20. The light-emitting diode according to claim 1 , wherein said second insulation layer is formed with a plurality of the openings, a distance between two adjacent ones of said openings ranging from 2 μm to 5 μm.

21. A light-emitting diode package, comprising:
a package substrate; and
at least one light-emitting diode as claimed in claim 1 , which is disposed on said package substrate.

22. A light-emitting diode module, comprising:
a package substrate; and
a light-emitting array which is disposed on said package substrate and which includes a plurality of light-emitting diodes that are arranged in a matrix, at least one of said light-emitting diodes being the light-emitting diode as claimed in claim 1 .

23. The light-emitting diode module according to claim 22 , wherein said matrix includes at least one column of red light-emitting diodes, at least one column of green light-emitting diodes, and at least one column of blue light-emitting diodes.

24. The light-emitting diode according to claim 22 , wherein said light-emitting diodes are blue light-emitting diodes.

25. A display device, comprising:
a plurality of light-emitting diode modules as claimed in claim 22 .

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Wang Feng
• Xia Zhanggen
• Zhan Yu
• Nie En-Song
• He Anhe
• Peng Kang-Wei
• Lin Su-Hui

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/841 Primary

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title