Dynamic processing of storage command based on internal operations of storage system

Patent metadata

Field	Value
Publication number	US-11733868-B2
Application number	US-202117382019-A
Country	US
Kind code	B2
Filing date	Jul 21, 2021
Priority date	Jun 6, 2016
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

Disclosed herein is a device and method for dynamically processing of a command within a storage system. This includes identifying a plurality of non-volatile memory storage locations of the storage system that have at least one operation parameter associated with the plurality of non-volatile memory storage locations. For each identified plurality of non-volatile memory storage locations, there is a determination whether a value of the at least one operation parameter exceeds a predetermined threshold value. That value is representative of operation effects of the storage system on a corresponding storage location of the identified plurality of non-volatile memory storage locations. During operation of the storage system, there is a throttling of execution of the command to access a storage location of the identified plurality of non-volatile memory storage locations that has the value determined to exceed the predetermined threshold value by a throttle amount determined to mitigate an effect of the value exceeding the predetermined threshold value.

First claim

What is claimed is:

1. A method for dynamically optimizing processing of a command within a storage system, comprising:
identifying a plurality of non-volatile memory storage locations of the storage system that have at least one operation parameter associated with the plurality of non-volatile memory storage locations;
for each identified plurality of non-volatile memory storage locations, determining whether a value of the at least one operation parameter exceeds a predetermined threshold value, wherein the value is representative of operation effects of the storage system on a corresponding storage location of the identified plurality of non-volatile memory storage locations;
during operation of the storage system, throttling execution of the command to access a storage location of the identified plurality of non-volatile memory storage locations that has the value determined to exceed the predetermined threshold value by a throttle amount determined to mitigate an effect of the value exceeding the predetermined threshold value; and
ranking the non-volatile memory storage locations having a value of the at least one operation parameter that exceeds the predetermined threshold value.

2. The method of claim 1 ,
wherein ranking the non-volatile memory storage locations is performed according to a first weighted function.

3. The method of claim 2 , further comprising:
calculating a throttling value for each non-volatile memory storage location of the plurality of non-volatile memory storage locations that exceeds the predetermined threshold value by a second weighted function.

4. The method of claim 3 , further comprising:
selecting a highest ranked non-volatile memory storage location based on the first weighted function;
throttling commands to the highest ranked non-volatile memory storage location based on the throttling value of the highest ranked non-volatile memory storage location; and
writing data associated with the throttled commands to the highest ranked non-volatile memory storage location based on the first weighted function.

5. The method of claim 3 , further comprising:
ranking the non-volatile memory storage locations having a value of the at least one operation parameter that does not exceed the predetermined threshold value according to a third weighted function; and
writing data associated with a command to a highest ranked non-volatile memory storage location having a value of the at least one operation parameter that do not exceed the predetermined criteria according to the third weighted function.

6. The method of claim 5 , wherein the third weighted function comprises:
f 2 =w 1 ·OP+w 2 ·power+ w 3 ·temperature+ w 4 ·endurance,

where w 1 , w 2 , w 3 , and w 4 represent preset weighting values, OP represents a number of free pages, power represents a power consumption of the non-volatile memory storage locations, temperature represents an operating temperature of the non-volatile memory storage locations, and endurance represents an erase count of the non-volatile memory storage locations.

7. The method of claim 3 , wherein the first weighted function comprises:
f 1 =w 1 ·OP+w 2 ·power+ w 3 ·temperature+ w 4 ·endurance+ w 5 ·IO,

where w 1 , w 2 , w 3 , w 4 , and w 5 represent preset weighting values, OP represents a number of free pages, power represents a power consumption of the non-volatile memory storage locations, temperature represents an operating temperature of the non-volatile memory storage locations, endurance represents an erase count of the non-volatile memory storage locations, and IO represents the calculated throttling value of a respective non-volatile memory storage location.

8. The method of claim 3 , wherein the second weighted function comprises any one of:
T=k 1 ×Δ; and

T IO =k 1 ×Δ+k 2 ×∫Δ,

where T and T IO are respective throttling values, Δ is the difference between a current value for an operation parameter and a predetermined value for that operation parameter, k 1 and k 2 are predetermined weighted variables, and ∫Δ represents a summation of deltas.

9. The method of claim 1 , wherein the at least one operation parameter comprises erase count, amount of current power consumption, current or average operating temperature, and amount of fragmentation.

10. The method of claim 1 , wherein the storage system is a solid-state drive and the non-volatile memory storage locations are non-volatile memory devices.

11. A device for dynamically optimizing processing of a command within a storage system, comprising:
a plurality of non-volatile memory storage locations for storing data;
a memory for storing one or more internal operation parameters for each of the non-volatile memory storage locations; and
a controller configured to:
identify a plurality of non-volatile memory storage locations of the storage system that have at least one operation parameter associated with the plurality of non-volatile memory storage locations,
for each identified plurality of non-volatile memory storage locations, determine whether a value of the at least one operation parameter exceeds a predetermined threshold value, wherein the value is representative of operation effects of the storage system on a corresponding storage location of the identified plurality of non-volatile memory storage locations,
during operation of the storage system, throttle execution of the command to access a storage location of the identified plurality of non-volatile memory storage locations that has the value determined to exceed the predetermined threshold value by a throttle amount determined to mitigate an effect of the value exceeding the predetermined threshold value, and
rank the non-volatile memory storage locations having a value of the at least one operation parameter that exceeds the predetermined threshold value.

12. The device of claim 11 , wherein the controller
ranks the non-volatile memory storage locations according to a first weighted function.

13. The device of claim 12 , wherein the controller is further configured to:
calculate a throttling value for each non-volatile memory storage location of the plurality of non-volatile memory storage locations that exceeds the predetermined threshold value by a second weighted function.

14. The device of claim 13 , wherein the controller is further configured to:
select a highest ranked non-volatile memory storage location based on the first weighted function;
throttle commands to the highest ranked non-volatile memory storage location based on the throttling value of the highest ranked non-volatile memory storage location; and
write data associated with the throttled commands to the highest ranked non-volatile memory storage location based on the first weighted function.

15. The device of claim 13 , wherein the controller is further configured to:
rank the non-volatile memory storage locations having a value of the at least one operation parameter that does not exceed the predetermined threshold value according to a third weighted function; and
write data associated with a command to a highest ranked non-volatile memory storage location having a value of the at least one operation parameter that do not exceed the predetermined criteria according to the third weighted function.

16. The device of claim 15 , wherein the third weighted function comprises:
f 2 =w 1 ·OP+w 2 ·power+ w 3 ·temperature+ w 4 ·endurance,

where w 1 , w 2 , w 3 , and w 4 represent preset weighting values, OP represents a number of fre

Assignees

• Kioxia Corp

Inventors

• Klein Yaron

Classifications

• G06F3/061 Primary

  Improving I/O performance · CPC title

• G06F3/0653

  Monitoring storage devices or systems · CPC title

• G06F3/0659

  Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G06F3/0688

  Non-volatile semiconductor memory arrays · CPC title