Metal plate for deposition mask, and deposition mask and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11732364-B2
Application number	US-202217574128-A
Country	US
Kind code	B2
Filing date	Jan 12, 2022
Priority date	Sep 13, 2016
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

First claim

What is claimed is:

1. A deposition mask comprising;
a metal plate comprising a first surface and a second surface opposite to the first surface,
wherein the metal plate comprises a plurality of through-holes,
wherein each of the through-holes comprises a first surface hole forming in the first surface, a second surface hole forming in the second surface, and a connecting part through which the first surface hole and the second surface hole communicate with each other,
wherein a width of the first surface hole is smaller than a width of the second surface hole,
wherein an angle formed by a virtual line connecting an end P 1 of the first surface hole and an end P 3 of the second surface hole, and the first surface is 70 degrees or less,
wherein an angle θ 1 formed by a virtual line connecting the end P 3 of the second surface hole and an end P 2 of the connecting part and a virtual line extending parallel to the first surface from the end of the connecting part is 20 to 70 degrees, and
wherein the angle θ 1 formed by the virtual line connecting the end of the second surface hole and the end of the connecting part and the virtual line extending parallel to the first surface from the end of the connecting part is different than an angle θ 2 formed by a virtual line connecting the end of the first surface hole and the end of the connecting part, and the first surface.

2. The deposition mask of claim 1 , wherein the angle formed by the virtual line connecting the end P 1 of the first surface hole and the end P 3 of the second surface hole, and the first surface is 60 degrees or less.

3. The deposition mask of claim 1 , wherein the angle formed by the virtual line connecting the end P 1 of the first surface hole and the end P 3 of the second surface hole, and the first surface is 50 degrees or less.

4. The deposition mask of claim 1 , wherein the angle θ 1 formed by the virtual line connecting the end P 3 of the second surface hole and the end P 2 of the connecting part and the virtual line extending parallel to the first surface from the end of the connecting part is 30 to 60 degrees.

5. The deposition mask of claim 1 , wherein the angle θ 1 formed by the virtual line connecting the end of the second surface hole and the end of the connecting part and the virtual line extending parallel to the first surface from the end of the connecting part is 32 to 38 degrees.

6. The deposition mask of claim 1 , wherein the angle θ 1 formed by the virtual line connecting the end of the second surface hole and the end of the connecting part and the virtual line extending parallel to the first surface from the end of the connecting part is 52 to 58 degrees.

7. The deposition mask of claim 1 , wherein the angle θ 2 formed by the virtual line connecting the end of the first surface hole and the end of the connecting part, and the first surface is greater than 90 degrees.

8. The deposition mask of claim 1 , wherein the angle θ 2 formed by the virtual line connecting the end of the first surface hole and the end of the connecting part, and the first surface is 90 to 110 degrees.

9. The deposition mask of claim 1 , wherein the angle θ 2 formed by the virtual line connecting the end of the first surface hole and the end of the connecting part, and the first surface is 90 degrees or less.

10. The deposition mask of claim 9 , wherein the angle θ 2 formed by the virtual line connecting the end of the first surface hole and the end of the connecting part, and the first surface is greater than the angle θ 1 which is angle formed by a virtual line connecting the end of the second surface hole and the end of the connecting part and the virtual line extending in the longitudinal direction of the first surface from the end of the connecting part.

11. The deposition mask of claim 9 , wherein a ratio of the width of the first surface hole and the width of the connecting part is 0.5:1 to 1:1.

12. The deposition mask of claim 1 , wherein a height of the first surface hole is 3 um or less.

13. The deposition mask of claim 1 , wherein a thickness of the metal plate is 20 um or less.

14. The deposition mask of claim 1 , wherein the first surface hole is disposed facing a substrate on which an organic material is deposited,
wherein the second surface hole is disposed facing an organic material deposition vessel to which the organic material is supplied.

15. The deposition mask of claim 1 , wherein the width of the first surface hole is greater than a width of the connecting portion, and
wherein the width of the second surface hole is greater than the width of the connecting part.

16. The deposition mask of claim 1 , wherein a width of at least one of the first surface hole, the second surface hole, and the connecting part is 20 um to 40 um.

17. The deposition mask of claim 1 , wherein the first surface includes a first bridge region disposed between adjacent through-holes among the plurality of through-holes,
wherein the second surface includes a second bridge region disposed between adjacent through-holes among the plurality of through-holes,
wherein an area of the first bridge region is larger than an area of the second bridge region.

Assignees

• Lg Innotek Co Ltd

Inventors

• Seong Dong Mug
• Yun Jong Min
• Cho Su Hyeon
• Kim Hae Sik
• Han Tae Hoon
• Son Hyo Won
• Lee Sang Yu
• Lee Sang Beum

Classifications

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H10P14/61

  using masks · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title