Vibrator And Vibrator Device
US-2024039511-A1 · Feb 1, 2024 · US
US11728770B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11728770-B2 |
| Application number | US-202017620494-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 15, 2020 |
| Priority date | Jun 17, 2019 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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A semiconductor device including a first inverter circuit connected in parallel to a crystal vibrating element; a second inverter circuit connected to the first inverter circuit so as to share an input therewith, and outputting an oscillation signal; and a wave filter connected to the second inverter circuit and having a passband that is determined in advance and includes an oscillation frequency of the oscillation signal.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device, comprising: a first inverter circuit connected in parallel to a crystal vibrating element; a second inverter circuit connected to the first inverter circuit so as to share an input therewith, and output an oscillation signal; and a wave filter connected to the second inverter circuit and having a passband that is determined in advance and includes an oscillation frequency of the oscillation signal, wherein the wave filter is configured by a plurality of wave filters that are connected in series, and the wave filter is a bandpass filter having a third inverter circuit, a capacitor connected in series to an input of the third inverter circuit, and a resistor connected between the input and an output of the third inverter circuit. 2. The semiconductor device of claim 1 , wherein a gate width ratio, which is a ratio of a gate width of a P-type field effect transistor to a gate width of an N-type field effect transistor, at the first inverter circuit and a gate width ratio of the second inverter circuit are substantially the same. 3. The semiconductor device of claim 1 , wherein at least one of a capacitance value of the capacitor or a resistance value of the resistor is variable. 4. The semiconductor device of claim 1 , wherein the second inverter circuit is disposed between a plurality of the first inverter circuits, as seen in a plan view. 5. An oscillation circuit, comprising: the semiconductor device of claim 1 ; and the crystal vibrating element connected in parallel to the first inverter circuit.
being a piezoelectric resonator (selection of piezoelectric material H10N30/00) · CPC title
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using transistor amplifiers (H03H11/1204 takes precedence; parallel-T filters H03H11/1295) · CPC title
Stabilisation of output, e.g. using crystal · CPC title
against variations of temperature only · CPC title
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