Semiconductor device and oscillation circuit

US11728770B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11728770-B2
Application numberUS-202017620494-A
CountryUS
Kind codeB2
Filing dateJun 15, 2020
Priority dateJun 17, 2019
Publication dateAug 15, 2023
Grant dateAug 15, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device including a first inverter circuit connected in parallel to a crystal vibrating element; a second inverter circuit connected to the first inverter circuit so as to share an input therewith, and outputting an oscillation signal; and a wave filter connected to the second inverter circuit and having a passband that is determined in advance and includes an oscillation frequency of the oscillation signal.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor device, comprising: a first inverter circuit connected in parallel to a crystal vibrating element; a second inverter circuit connected to the first inverter circuit so as to share an input therewith, and output an oscillation signal; and a wave filter connected to the second inverter circuit and having a passband that is determined in advance and includes an oscillation frequency of the oscillation signal, wherein the wave filter is configured by a plurality of wave filters that are connected in series, and the wave filter is a bandpass filter having a third inverter circuit, a capacitor connected in series to an input of the third inverter circuit, and a resistor connected between the input and an output of the third inverter circuit. 2. The semiconductor device of claim 1 , wherein a gate width ratio, which is a ratio of a gate width of a P-type field effect transistor to a gate width of an N-type field effect transistor, at the first inverter circuit and a gate width ratio of the second inverter circuit are substantially the same. 3. The semiconductor device of claim 1 , wherein at least one of a capacitance value of the capacitor or a resistance value of the resistor is variable. 4. The semiconductor device of claim 1 , wherein the second inverter circuit is disposed between a plurality of the first inverter circuits, as seen in a plan view. 5. An oscillation circuit, comprising: the semiconductor device of claim 1 ; and the crystal vibrating element connected in parallel to the first inverter circuit.

Assignees

Inventors

Classifications

  • H03B5/32Primary

    being a piezoelectric resonator (selection of piezoelectric material H10N30/00) · CPC title

  • Frequency selective two-port networks · CPC title

  • using transistor amplifiers (H03H11/1204 takes precedence; parallel-T filters H03H11/1295) · CPC title

  • Stabilisation of output, e.g. using crystal · CPC title

  • against variations of temperature only · CPC title

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Frequently asked questions

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What does patent US11728770B2 cover?
A semiconductor device including a first inverter circuit connected in parallel to a crystal vibrating element; a second inverter circuit connected to the first inverter circuit so as to share an input therewith, and outputting an oscillation signal; and a wave filter connected to the second inverter circuit and having a passband that is determined in advance and includes an oscillation frequen…
Who is the assignee on this patent?
Lapis Semiconductor Co Ltd
What technology area does this patent fall under?
Primary CPC classification H03B5/32. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 15 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).