Power semiconductor device having a strain-inducing material embedded in an electrode

Patent metadata

Field	Value
Publication number	US-11728427-B2
Application number	US-202117353119-A
Country	US
Kind code	B2
Filing date	Jun 21, 2021
Priority date	Jun 21, 2021
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
an electrode structure on or in the semiconductor substrate, the electrode structure comprising an electrode and an insulating material that separates the electrode from the semiconductor substrate; and
a strain-inducing material embedded in the electrode,
wherein the electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device,
wherein the electrode is under either tensile or compressive stress in the first direction,
wherein the strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction.

2. The semiconductor device of claim 1 , wherein the electrode is a gate electrode, and wherein the region of the semiconductor substrate that adjoins the electrode structure is a channel region.

3. The semiconductor device of claim 2 , wherein the semiconductor device is an n-channel device, wherein the charge carriers that contribute to the current flow in the first direction are electrons, and wherein the strain-inducing material either enhances or at least partly counteracts the stress of the gate electrode in the first direction such that strain in the channel region becomes more tensile or less compressive in the first direction.

4. The semiconductor device of claim 3 , wherein the gate electrode is under tensile stress in the first direction, and wherein the strain-inducing material is either under less tensile stress than the gate electrode or under compressive stress in the first direction.

5. The semiconductor device of claim 3 , wherein the gate electrode is under compressive stress in the first direction, and wherein the strain-inducing material is under more compressive stress than the gate electrode in the first direction.

6. The semiconductor device of claim 2 , wherein the semiconductor device is a p-channel device, wherein the charge carriers that contribute to the current flow in the first direction are holes, and wherein the strain-inducing material either enhances or at least partly counteracts the stress of the gate electrode in the first direction such that strain in the channel region becomes more compressive or less tensile in the first direction.

7. The semiconductor device of claim 6 , wherein the gate electrode is under compressive stress in the first direction, and wherein the strain-inducing material is either under less compressive stress than the gate electrode or under tensile stress in the first direction.

8. The semiconductor device of claim 6 , wherein the gate electrode is under tensile stress in the first direction, and wherein the strain-inducing material is under more tensile stress than the gate electrode in the first direction.

9. The semiconductor device of claim 2 , wherein the gate electrode is disposed in a trench formed in the semiconductor substrate, and wherein the trench further includes a field plate electrode disposed below the gate electrode and insulated from the gate electrode.

10. The semiconductor device of claim 9 , further comprising:
an additional strain-inducing material embedded in the field plate electrode,
wherein the field plate electrode adjoins a drift region of the semiconductor substrate,
wherein the field plate electrode is under either tensile or compressive stress in the first direction,
wherein the additional strain-inducing material either enhances or at least partly counteracts the stress of the field plate electrode in the first direction.

11. The semiconductor device of claim 2 , wherein the gate electrode is disposed in a first trench formed in the semiconductor substrate, wherein a field plate electrode is disposed in a second trench formed in the semiconductor substrate, and wherein the first trench and the second trench are laterally spaced apart from one another.

12. The semiconductor device of claim 11 , further comprising:
an additional strain-inducing material embedded in the field plate electrode,
wherein the field plate electrode adjoins a drift region of the semiconductor substrate,
wherein the field plate electrode is under either tensile or compressive stress in the first direction,
wherein the additional strain-inducing material either enhances or at least partly counteracts the stress of the field plate electrode in the first direction.

13. The semiconductor device of claim 1 , wherein the electrode structure is a planar gate electrode structure disposed on a first main surface of the semiconductor substrate, wherein the electrode is a gate electrode, and wherein the insulating material separates the gate electrode from the first main surface of the semiconductor substrate.

14. The semiconductor device of claim 13 , further comprising:
a trench formed in the semiconductor substrate;
a field plate electrode in the trench and separated from the semiconductor substrate by an additional insulating material.

15. The semiconductor device of claim 14 , further comprising:
an additional strain-inducing material embedded in the field plate electrode,
wherein the field plate electrode is under either tensile or compressive stress in the first direction,
wherein the additional strain-inducing material either enhances or at least partly counteracts the stress of the field plate electrode in the first direction.

16. The semiconductor device of claim 1 , wherein the electrode is a field plate electrode, wherein the field plate electrode is disposed in a trench formed in the semiconductor substrate, and wherein the region of the semiconductor substrate that adjoins the electrode structure is a drift region.

17. The semiconductor device of claim 16 , wherein the semiconductor device is an n-channel device, wherein the charge carriers that contribute to the current flow in the first direction are electrons, and wherein the strain-inducing material either enhances or at least partly counteracts the stress of the field plate electrode in the first direction such that strain in the drift region becomes more tensile or less compressive in the first direction.

18. The semiconductor device of claim 17 , wherein the field plate electrode is under tensile stress in the first direction, and wherein the strain-inducing material is either under less tensile stress than the field plate electrode or under compressive stress in the first direction.

19. The semiconductor device of claim 17 , wherein the field plate electrode is under compressive stress in the first direction, and wherein the strain-inducing material is under more compressive stress than the field plate electrode in the first direction.

20. The semiconductor device of claim 16 , wherein the semiconductor device is a p-channel device, wherein the charge carriers that contribute to the current flow in the first direction are holes, and wherein the strain-inducing material either enhances or at least partly counteracts the stress of the field plate electrode in the first direction such that strain in the drift region becomes more compressive or less tensile in the first direction.

21. The semiconductor device of claim 20 , wherein the field plate electrode is under compressive stress in the first direction, and wherein the strain-inducing material is either under less compressive stress than the field plate electrode or under tensile stress in the first direction.

22. The semiconductor device of claim 21 , w

Assignees

• Infineon Technologies Austria Ag

Inventors

• Karner Stefan
• Blank Oliver
• Denifl Günter
• Galasso Germano
• Roy Saurabh
• Schulze Hans-Joachim
• Stadtmueller Michael

Classifications

• H10D30/668 Primary

  having trench gate electrodes, e.g. UMOS transistors · CPC title

• H10D30/665

  having edge termination structures · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D30/794 Primary

  comprising conductive materials, e.g. silicided source, drain or gate electrodes · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title