Device and method for managing electromagnetic radiation

Patent metadata

Field	Value
Publication number	US-11728398-B2
Application number	US-202016928243-A
Country	US
Kind code	B2
Filing date	Jul 14, 2020
Priority date	Aug 23, 2019
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

Semiconductor devices having conductive floating gates superimposed on and/or embedded within a conducting channel for managing electromagnetic radiation in the device. The conductive floating gates can comprise a one- or two-dimensional array of asymmetric structures superimposed on and/or embedded within the conducting channel. The conductive floating gates can comprise Nb 2 N, Ta 2 N, TaN x , NbN x , WN x , or MoN x or any transition metal nitride compound. The device can include a plurality of conductive floating gates on a rear surface of a barrier layer, wherein each of the conductive floating gates might be separately biased for individual tuning. Antennas for capturing or emitting THz or sub-THz radiation could be attached to the device contacts. Terahertz or infrared radiation could be manipulated by driving a current through the conducting channel into a plasmonic boom regime. Additional manipulation of the electromagnetic radiation could be achieved by having antennas with an appropriate phase angle shift.

First claim

What is claimed is:

1. A semiconductor device having a plurality of separated floating gates directly embedded within a conducting channel within the semiconductor device;
wherein each one of the plurality of separated floating gates is spaced-apart from another one of the plurality of separated floating gates within the conducting channel;
wherein each of the plurality of separated floating gates has a size smaller than a mean free path of electrons in the semiconductor device.

2. The semiconductor device according to claim 1 , wherein the plurality of separated floating gates comprises a one- or two-dimensional periodic array of asymmetric structures.

3. The semiconductor device according to claim 1 , wherein the plurality of separated floating gates comprises one or more concentric structures surrounding a central source.

4. The semiconductor device according to claim 1 , wherein one or more additional floating gates are isolated front the conducting channel by a barrier layer, wherein the conducting channel is configured for managing electromagnetic radiation within the semiconductor device.

5. The semiconductor device according to claim 1 , wherein at least one of the plurality of separated floating gates comprises Nb 2 N, Ta 2 N, TaN x , NbN x , WN x , MoN x , graphene, or a transition metal nitride ternary compound.

6. The semiconductor device according to claim 1 , wherein at least one of the plurality of separated floating gates comprises semiconducting or metallic nanoparticles or nanocrystals.

7. The semiconductor device according to claim 1 , wherein at least a portion of the plurality of separated floating gates is situated on a rear surface of a barrier layer in the semiconductor device, wherein each of the floating gates in the portion can be separately biased for individual tuning.

8. The semiconductor device according to claim 1 , wherein the semiconductor device further includes at least one antenna attached to device contacts, wherein the at least one antenna is configured to manage THz or sub-THz radiation in the semiconductor device.

9. The semiconductor device according to claim 1 , wherein the semiconductor device further includes at least one antenna attached to device contacts, wherein the at least one antenna is configured to manage radiation in the semiconductor device through an appropriate phase angle shift.

10. The semiconductor device according to claim 1 , wherein at least one of the plurality of separated floating gates comprises superconducting material.

11. A method for managing electromagnetic waves in a semiconductor device, comprising:
providing a semiconductor device having a plurality of separated floating gates directly embedded within a conducting channel within the semiconductor device;
wherein each one of the plurality of separated floating gates is spaced-apart from another one of the plurality of separated floating gates within the conducting channel;
wherein each of the plurality of separated floating gates has a size smaller than a mean free path of electrons in the semiconductor device;
the method further comprising modulating, via the plurality of separated floating gates, properties of plasma waves in an electronic field of the semiconductor device.

12. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein the plurality of separated floating gates comprises a one- or two-dimensional periodic array of asymmetric structures.

13. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein the plurality of separated floating gates comprises one or more concentric structures surrounding a central source.

14. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein one or more additional floating gates are isolated from the conducting channel by a barrier layer, wherein the conducting channel is configured for managing electromagnetic radiation within the semiconductor device.

15. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein at least one of the plurality of separated floating gates comprises Nb 2 N, Ta 2 N, TaN x , NbN x , WN x , MoN x , graphene, or a transition metal nitride ternary compound.

16. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein at, least one of the plurality of separated floating gates comprises semiconducting or metallic nanoparticles or nanocrystals.

17. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein at least a portion of the plurality of separated floating gates is situated on a rear surface of a barrier layer in the semiconductor device, wherein each of the floating gates in the portion can be separately biased for individual tuning.

18. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein the semiconductor device further includes at least one antenna attached to device contacts, wherein the at least one antenna is configured to manage THz or sub-THz radiation in the semiconductor device.

19. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein the semiconductor device further includes at least one antenna attached to device contacts, wherein the at least one antenna is configured to manage radiation in the semiconductor device through an appropriate phase angle shift.

20. The method for managing electromagnetic waves in a semiconductor device according to claim 11 , wherein at least one of the plurality of separated floating gates comprises superconducting material.

Assignees

• Us Gov Sec Navy

Inventors

• Shur Michael
• Meyer David J

Classifications

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H10D30/0411

  of FETs having floating gates · CPC title

• H10D30/68

  Floating-gate IGFETs · CPC title

• H10F39/189

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/184

  Infrared image sensors · CPC title