Group III nitride device having an ohmic contact

Patent metadata

Field	Value
Publication number	US-11728389-B2
Application number	US-202217695366-A
Country	US
Kind code	B2
Filing date	Mar 15, 2022
Priority date	Nov 28, 2018
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

In an embodiment, a Group III nitride device includes a multilayer Group III nitride structure and a first ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride device structure. The first ohmic contact includes a base portion having a conductive surface, the conductive surface including a peripheral portion and a central portion, the peripheral portion and the central portion being substantially coplanar and being of differing composition, a conductive via positioned on the central portion of the conductive surface and a contact pad positioned on the conductive via.

First claim

What is claimed is:

1. A Group III nitride device, comprising:
a multilayer Group III nitride structure; and
a first ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride structure;

wherein the first ohmic contact comprises:
a base portion having a conductive surface, the conductive surface comprising a peripheral portion and a central portion, the peripheral portion and the central portion being substantially coplanar and being of differing composition, wherein the central portion comprises TiN;
a conductive via positioned on the central portion of the conductive surface; and
a contact pad positioned on the conductive via.

2. The Group III nitride device of claim 1 , further comprising a dielectric layer arranged on the multilayer Group III nitride structure, wherein the conductive via extends from an upper surface of the dielectric layer to the conductive surface, wherein the contact pad is arranged on the upper surface of the dielectric layer, and wherein at least the peripheral portion of the conductive surface is covered by the dielectric layer.

3. The Group III nitride device of claim 2 , wherein the dielectric layer covers side faces of the base portion and regions of the central portion of the conductive surface which are uncovered by the conductive via.

4. The Group III nitride device of claim 2 , wherein the dielectric layer includes a first sublayer positioned on an upper surface of the multilayer Group nitride structure and a second sublayer positioned on the first sublayer, and wherein an upper surface of the first sublayer is coplanar with the conductive surface of the base portion of the first ohmic contact.

5. The Group III nitride device of claim 1 , wherein the base portion comprises a well extending into a lower portion, an upper surface of the well providing the central portion of the conductive surface and an upper surface of the lower portion providing the peripheral portion of the conductive surface, and wherein the well comprises a conductive barrier material and the peripheral portion comprises an ohmic contact material.

6. The Group III nitride device of claim 1 , wherein the peripheral portion comprises aluminum or an aluminum copper or a titanium aluminum alloy.

7. The Group III nitride device of claim 1 , further comprising:
a second ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride device structure; and
a gate laterally positioned between the first ohmic contact and the second ohmic contact and forming a gate contact to the multilayer Group III nitride structure.

8. The Group III nitride device of claim 7 , wherein the second ohmic contact comprises:
a base portion having a conductive surface comprising a peripheral portion and a central portion that are substantially coplanar and of differing composition;
a conductive via positioned on the central portion of the conductive surface of the second ohmic contact; and
a contact pad positioned on the conductive via of the second ohmic contact.

9. The Group III nitride device of claim 1 , further comprising:
a gate contact that includes a gate conductive via positioned on the Group III nitride-based structure and a gate contact pad positioned on the gate conductive via.

10. The Group III nitride device of claim 9 , wherein the gate contact is a Schottky contact.

11. The Group III nitride device of claim 9 , wherein the Group III nitride-based structure includes a Group III nitride barrier layer, and wherein a base of the gate contact is positioned within a thickness of the Group III nitride barrier layer.

12. The Group III nitride device of claim 9 , wherein the first ohmic contact provides a source contact, and wherein a distance between the first ohmic contact and the gate contact, as measured at a base of the first ohmic contact and the gate contact, is 250 nm or less.

13. The Group III nitride device of claim 9 , wherein a gate length for the Group III nitride device is 250 nm or less.

14. The Group III nitride device of claim 1 , further comprising:
an insulated gate contact.

15. The Group III nitride device of claim 14 , further comprising:
a dielectric layer arranged on the multilayer Group III nitride structure, the dielectric layer having an opening; and
a gate insulating layer disposed in the opening in the dielectric layer such that the gate insulating layer lines sidewalls of the opening formed by the dielectric layer and a base formed by the multilayer Group III nitride structure,
wherein the insulated gate contact includes a gate metal formed on the gate insulating layer.

16. The Group III nitride device of claim 1 , wherein the conductive via has a lateral extent which is less than a lateral extent of the base portion.

17. The Group III nitride device of claim 16 , wherein the lateral extent of the conductive via is less than a lateral extent of the central portion of the conductive surface.

18. The Group III nitride device of claim 1 , wherein the base portion of the first ohmic contact includes a well and a lower portion, wherein the well comprises a metal or alloy of a first composition and extends into the lower portion, and wherein the lower portion comprises a metal or alloy of a second composition different from the first composition.

19. The Group III nitride device of claim 18 , wherein an upper surface of the well provides the central portion of the conductive surface, and wherein an upper surface of the lower portion provides the peripheral portion of the conductive surface.

20. The Group III nitride device of claim 18 , wherein the well and the central portion of the conductive surface comprise a conductive barrier material, and wherein the lower portion and the peripheral portion of the conductive surface comprise an ohmic contact material.

Assignees

• Infineon Technologies Ag

Inventors

• Birner Albert
• Ropohl Jan

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10D64/0125

  characterised by the sectional shape, e.g. T or inverted T · CPC title

• H10D64/0116

  to Group III-V semiconductors · CPC title

• H10D30/47

  having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] · CPC title