Deposition of organic films

Patent metadata

Field	Value
Publication number	US-11728175-B2
Application number	US-202017130902-A
Country	US
Kind code	B2
Filing date	Dec 22, 2020
Priority date	Jun 1, 2016
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

First claim

What is claimed is:

1. A process for selectively processing a substrate, the process comprising:
patterning a second layer that is over a first layer of the substrate, such that a first surface of the first layer is exposed;
forming spacers over a second surface of the second layer;
exposing the first surface between at least two of the spacers;
selectively depositing an organic film on the exposed first surface of the first layer relative to the second surface of the second layer, wherein the first surface and the second surface have different compositions, wherein the organic film is deposited between the at least two of the spacers;
subjecting the organic film to an infiltration process to incorporate metal into the organic film and thereby form an infiltrated film, wherein a mask comprises the infiltrated film; and
processing the substrate using the mask, said processing comprising selectively removing material of a first layer that is not under the mask or the spacers relative to material of the first layer that is under the mask and the spacers, wherein the first layer comprises the first surface, wherein the mask comprises the organic film on the first surface.

2. The process of claim 1 , wherein the first surface is a metallic surface.

3. The process of claim 2 , wherein the second surface is a dielectric surface.

4. The process of claim 1 , wherein the mask is an etch mask, said processing the substrate comprises etching the second layer, and said etching is selective to material of the second layer relative to the mask.

5. The process of claim 4 , wherein and said processing the substrate comprises further etching the first layer selectively relative to the mask to form a structure.

6. The process of claim 5 , wherein the structure comprises a pillar.

7. The process of claim 1 , wherein said patterning the second layer comprises using photolithography.

8. The process of claim 1 , wherein said processing the substrate comprises using the mask as an etch mask in a tone reversal process.

9. The process of claim 8 , wherein the first surface is a metallic surface, and the second surface is a dielectric surface.

10. The process of claim 8 , wherein said patterning the second layer comprises patterning a photoresist over the second layer, and the tone reversal process results in the first layer having a pattern that is inverted relative to the photoresist.

11. The process of claim 8 , further comprising subjecting the organic film to an infiltration process to incorporate metal into the organic film and thereby form an infiltrated film, wherein the mask comprises the infiltrated film, and wherein the infiltrated film has an increased resistance to selective etching of said processing relative to the organic film.

12. The process of claim 1 , wherein the organic film comprises a polyimide film.

13. The process of claim 1 , wherein a selectivity for depositing the organic film on the first surface relative to the second surface is at least 80%.

14. The process of claim 1 , wherein there is no organic material of the organic film on the second surface during said processing the substrate.

15. A process for selectively processing a substrate, the process comprising:
patterning a second layer that is over a first layer of the substrate, such that a first surface of the first layer is exposed;
selectively depositing an organic film on the exposed first surface of the first layer relative to a second surface of the second layer, wherein the first surface and the second surface have different compositions; and
processing the substrate using a block mask, wherein the block mask comprises the organic film on the first surface and wherein said processing the substrate comprises using the block mask in a block mask process to modify a primary mask by blocking a portion of the primary mask.

16. The process of claim 15 , wherein the second surface has a primary mask pattern thereon prior to said selectively depositing, and wherein the block mask modifies the primary mask pattern for said processing the substrate.

17. The process of claim 15 , wherein:
said patterning the second layer comprises forming a hard mask, lithographically patterning the hard mask, and exposing the first surface by etching through the second layer when the patterned hard mask is over the second layer; and
said selectively depositing the organic film comprises selectively depositing onto the first surface relative to the second surface and a material of the hard mask.

18. The process of claim 15 , wherein a selectivity for depositing the organic film on the exposed first surface of the first layer relative to the second surface of the second layer is at least 80%.

19. The process of claim 15 , wherein there is no organic material of the organic film on the second surface during said processing the substrate.

Assignees

• Asm Ip Holding Bv

Inventors

• Tois Eva E
• Suemori Hidemi
• Pore Viljami J
• Haukka Suvi P
• Sharma Varun
• Maes Jan Willem
• Longrie Delphine
• Kachel Krzysztof

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title