Method for manufacturing metal oxynitride film

Patent metadata

Field	Value
Publication number	US-11728163-B2
Application number	US-201917257071-A
Country	US
Kind code	B2
Filing date	Jun 24, 2019
Priority date	Jul 6, 2018
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

First claim

The invention claimed is:

1. A method for manufacturing a metal oxynitride film,
wherein the metal oxynitride film is epitaxially grown in contact with a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced,
wherein the oxide target comprises zinc,
wherein the single crystal substrate during deposition of the metal oxynitride film has a temperature that is higher than or equal to 80° C. and lower than or equal to 400° C., and
wherein a flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of a total flow rate of the gas.

2. The method for manufacturing a metal oxynitride film, according to claim 1 ,
wherein the oxide target comprises at least one of the group of indium and gallium.

3. The method for manufacturing a metal oxynitride film, according to claim 1 ,
wherein the single crystal substrate is an yttria-stabilized zirconia (YSZ) substrate, and
wherein a plane orientation of the single crystal substrate is (111).

4. The method for manufacturing a metal oxynitride film, according to claim 1 ,
wherein the single crystal substrate is an A-plane sapphire substrate, and
wherein a plane orientation of the single crystal substrate is (110).

5. The method for manufacturing a metal oxynitride film, according to claim 1 ,
wherein a crystal structure of the metal oxynitride film is a wurtzite structure.

6. The method for manufacturing a metal oxynitride film, according to claim 5 ,
wherein when pole measurement is performed on the metal oxynitride film, a diffraction peak indicating six-fold symmetry is observed in a φ scan on a (101) plane of a crystal of the metal oxynitride film in the pole measurement.

7. The method for manufacturing a metal oxynitride film, according to claim 6 ,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle of around 0°,
wherein a half-width of the first spot is less than 2°,
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle of greater than or equal to 61° and less than or equal to 65°, and
wherein a half-width of the second spot is less than 2°.

8. A method for manufacturing an in-plane oriented metal oxynitride film,
wherein an in-plane oriented metal oxynitride film is deposited in contact with a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced,
wherein the oxide target comprises zinc,
wherein the single crystal substrate during deposition of the in-plane oriented metal oxynitride film has a temperature that is higher than or equal to 80° C. and lower than or equal to 400° C., and
wherein a flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of a total flow rate of the gas.

9. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 8 ,
wherein the oxide target comprises at least one of the group of indium and gallium.

10. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 8 ,
wherein the single crystal substrate is an yttria-stabilized zirconia (YSZ) substrate, and
wherein a plane orientation of the single crystal substrate is (111).

11. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 8 ,
wherein the single crystal substrate is an A-plane sapphire substrate, and
wherein a plane orientation of the single crystal substrate is (110).

12. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 8 ,
wherein a crystal structure of the in-plane oriented metal oxynitride film is a wurtzite structure.

13. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 12 ,
wherein when pole measurement is performed on the in-plane oriented metal oxynitride film, a diffraction peak indicating six-fold symmetry is observed in a φ scan on a (101) plane of a crystal of the in-plane oriented metal oxynitride film in the pole measurement.

14. The method for manufacturing an in-plane oriented metal oxynitride film, according to claim 13 ,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the in-plane oriented metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle of around 0°,
wherein a half-width of the first spot is less than 2°,
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle ψ of greater than or equal to 61° and less than or equal to 65°, and
wherein a half-width of the second spot is less than 2°.

Assignees

• Semiconductor Energy Lab

Inventors

• Tanemura Kazuki
• Sambonsuge Shota
• Okuno Naoki

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H10P14/6329 Primary

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title