Compound semiconductor and manufacturing method thereof
US-2017217783-A1 · Aug 3, 2017 · US
US11724944B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11724944-B2 |
| Application number | US-201716476500-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2017 |
| Priority date | Mar 15, 2017 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.
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The invention claimed is: 1. A compound semiconductor represented by the following Chemical Formula 1: S x CO 4 Sb 12-y-z Q y Sn z [Chemical Formula 1] wherein in Chemical Formula 1, Q comprises at least one among O, Se, and Te, and x, y, and z are denote a molar ratio, wherein 0<x≤1, 0<y<12, 0<z<12, 0<y+z<12, and y≥3x, wherein the compound semiconductor is one in which S is filled as a filler in an n-type Co—Sb skutterudite which is simultaneously substituted with a chalcogen element Q and Sn at Sb sites. 2. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, y≥3x when 0<y+z<1. 3. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, y=3x+z when 1≤y+z<12. 4. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, x is in the range of 0.1≤x≤0.2. 5. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, y and z are in the range of 0.6≤y≤0.8 and 0.05≤z≤0.2, respectively. 6. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, Q is Te. 7. A method for preparing the compound semiconductor of claim 1 comprising: mixing S, Co, Sb, Q, and Sn in a content so as to satisfy a compound composition of the following Chemical Formula 1 to provide a mixture; and thermally treating the mixture: S x CO 4 Sb 12-y-z Q y Sn z [Chemical Formula 1] wherein in Chemical Formula 1, Q comprises at least one among O, Se, and Te, and x, y, and z denote a molar ratio, wherein 0<x≤1, 0<y<12, 0<z<12, 0<y+z<12, and y≥3x. 8. The method for preparing the compound semiconductor of claim 7 , wherein thermally treating the mixture is performed at a temperature of 400° C. to 800° C. 9. The method for preparing the compound semiconductor of claim 7 , further comprising a cooling step after thermally treating the mixture. 10. The method for preparing the compound semiconductor of claim 7 , further comprising a pressure-sintering step after thermally treating the mixture. 11. A thermoelectric conversion device comprising the compound semiconductor according to claim 1 . 12. A solar cell comprising the compound semiconductor according to claim 1 .
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