Chamber components with polished internal apertures

US11724353B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11724353-B2
Application numberUS-202217834207-A
CountryUS
Kind codeB2
Filing dateJun 7, 2022
Priority dateJun 27, 2014
Publication dateAug 15, 2023
Grant dateAug 15, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a plasma-resistant chamber component of a processing chamber, the method comprising: polishing at least one aperture of the plasma-resistant chamber component, the component disposed inside a ring between a mounting stage and a clamp, wherein a pump configured to flow an abrasive media is fluidly coupled to the plasma-resistant chamber component by the mounting stage, polishing the at least one aperture of the plasma-resistant chamber component by flowing the abrasive media along a first abrasive media flow path from the mounting stage to the clamp through the at least one aperture of the plasma-resistant chamber component and along a second abrasive media flow path between an outer surface of the plasma-resistant chamber component and an inner surface of the ring, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles. 2. The method of claim 1 , further comprising: drilling through the plasma-resistant chamber component to produce the at least one aperture; and reaming the at least one aperture with a reaming device to increase a diameter of the at least one aperture prior to performing the polishing. 3. The method of claim 1 , further comprising: periodically adjusting a flow direction of the abrasive media through the at least one aperture over a time duration, wherein a length of the time duration is between about 20 minutes and about 60 minutes. 4. The method of claim 1 , wherein a diameter of the at least one aperture is between about 0.01 inches and about 0.1 inches. 5. The method of claim 1 , wherein the plasma-resistant chamber component comprises at least one of Al 2 O 3 , AlN, SiO 2 , Y 3 Al 5 O 12 , Y 4 A 12 O 9 , Y 2 O 3 , Er 2 O 3 , Gd 2 O3, Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 , YF 3 , Nd 2 O 3 , Er 4 Al 2 O 9 , ErAlO 3 , Gd 4 Al 2 O 9 , GdAlO 3 , Nd 3 Al 5 O 12 , Nd 4 Al 2 O 9 , NdAlO 3 , or a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 -ZrO 2 . 6. The method of claim 1 , wherein the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride. 7. The method of claim 1 , wherein an average size of each of the plurality of abrasive particles is approximately 5 micrometers to 100 micrometers. 8. The method of claim 1 , wherein the abrasive media further comprises an oil-based plasticizer. 9. The method of claim 1 , wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP. 10. The method of claim 1 , wherein polishing at least one aperture of the plasma-resistant chamber component comprises: disposing the plasma-resistant chamber component inside the ring between the mounting stage and the clamp; and flowing the abrasive media, via the pump, through the at least one aperture to polish the at least one aperture. 11. The method of claim 10 , wherein the clamp is to apply a clamping pressure of between about 1,500 psi and about 2,500 psi to the plasma-resistant chamber component.

Assignees

Inventors

Classifications

  • B24B31/006Primary

    for grinding the interior surfaces of hollow workpieces · CPC title

  • Methods for boring or drilling, or for working essentially requiring the use of boring or drilling machines; Use of auxiliary equipment in connection with such methods · CPC title

  • for grinding tubes internally · CPC title

  • whereby the workpieces are mounted on a holder and are immersed in the abrasive material · CPC title

  • using plastically deformable grinding compound, moved relatively to the workpiece under the influence of pressure · CPC title

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What does patent US11724353B2 cover?
Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification B24B31/006. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Aug 15 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).