Additive Manufacturing for Radio Frequency Hardware
US-2015097746-A1 · Apr 9, 2015 · US
US11724353B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11724353-B2 |
| Application number | US-202217834207-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 7, 2022 |
| Priority date | Jun 27, 2014 |
| Publication date | Aug 15, 2023 |
| Grant date | Aug 15, 2023 |
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Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a plasma-resistant chamber component of a processing chamber, the method comprising: polishing at least one aperture of the plasma-resistant chamber component, the component disposed inside a ring between a mounting stage and a clamp, wherein a pump configured to flow an abrasive media is fluidly coupled to the plasma-resistant chamber component by the mounting stage, polishing the at least one aperture of the plasma-resistant chamber component by flowing the abrasive media along a first abrasive media flow path from the mounting stage to the clamp through the at least one aperture of the plasma-resistant chamber component and along a second abrasive media flow path between an outer surface of the plasma-resistant chamber component and an inner surface of the ring, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles. 2. The method of claim 1 , further comprising: drilling through the plasma-resistant chamber component to produce the at least one aperture; and reaming the at least one aperture with a reaming device to increase a diameter of the at least one aperture prior to performing the polishing. 3. The method of claim 1 , further comprising: periodically adjusting a flow direction of the abrasive media through the at least one aperture over a time duration, wherein a length of the time duration is between about 20 minutes and about 60 minutes. 4. The method of claim 1 , wherein a diameter of the at least one aperture is between about 0.01 inches and about 0.1 inches. 5. The method of claim 1 , wherein the plasma-resistant chamber component comprises at least one of Al 2 O 3 , AlN, SiO 2 , Y 3 Al 5 O 12 , Y 4 A 12 O 9 , Y 2 O 3 , Er 2 O 3 , Gd 2 O3, Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 , YF 3 , Nd 2 O 3 , Er 4 Al 2 O 9 , ErAlO 3 , Gd 4 Al 2 O 9 , GdAlO 3 , Nd 3 Al 5 O 12 , Nd 4 Al 2 O 9 , NdAlO 3 , or a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 -ZrO 2 . 6. The method of claim 1 , wherein the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride. 7. The method of claim 1 , wherein an average size of each of the plurality of abrasive particles is approximately 5 micrometers to 100 micrometers. 8. The method of claim 1 , wherein the abrasive media further comprises an oil-based plasticizer. 9. The method of claim 1 , wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP. 10. The method of claim 1 , wherein polishing at least one aperture of the plasma-resistant chamber component comprises: disposing the plasma-resistant chamber component inside the ring between the mounting stage and the clamp; and flowing the abrasive media, via the pump, through the at least one aperture to polish the at least one aperture. 11. The method of claim 10 , wherein the clamp is to apply a clamping pressure of between about 1,500 psi and about 2,500 psi to the plasma-resistant chamber component.
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whereby the workpieces are mounted on a holder and are immersed in the abrasive material · CPC title
using plastically deformable grinding compound, moved relatively to the workpiece under the influence of pressure · CPC title
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