Acoustic resonators and filters that support fifth generation (5G) wireless communications standards

Patent metadata

Field	Value
Publication number	US-11722116-B2
Application number	US-202017247040-A
Country	US
Kind code	B2
Filing date	Nov 24, 2020
Priority date	Nov 25, 2019
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

An apparatus includes a piezoelectric thin film suspended above a carrier substrate, where the piezoelectric thin film is of one of lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A signal electrode is disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction. A ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, where the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates. A release window is formed within the piezoelectric thin film adjacent to the ground electrode.

First claim

What is claimed is:

1. An apparatus comprising:
a piezoelectric thin film suspended above a carrier substrate, wherein the piezoelectric thin film comprises one of lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film;
a signal electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction;
a ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, wherein the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates; and
a release window formed within the piezoelectric thin film adjacent to the ground electrode.

2. The apparatus of claim 1 , wherein the piezoelectric thin film comprises one of a Z cut, a Y cut, or an X cut.

3. The apparatus of claim 1 , wherein the carrier substrate also comprises one of LiNbO 3 or LiTaO 3 , the apparatus further comprising a cavity formed between the carrier substrate and the piezoelectric thin film, wherein a length of the gap between the signal electrode and the ground electrode comprises a length of the cavity.

4. The apparatus of claim 1 , wherein a resonant frequency of the Lamb wave mode is determined at least in part by the longitudinal distance of the gap, and the longitudinal distance is between 1 microns (μm) and 25 μm.

5. The apparatus of claim 1 , wherein the signal electrode and the ground electrode comprise gold and are of a thickness between 40 and 60 nanometers (nm).

6. The apparatus of claim 1 , wherein a thickness of the piezoelectric thin film is between 350 nm and 700 nm.

7. The apparatus of claim 1 , wherein the Lamb wave mode is one of a first-order asymmetric (A1) mode, a third-order asymmetric (A3) mode, a fifth-order asymmetric (A5) mode, a seventh-order asymmetric (A7) mode, a ninth-order asymmetric (A9) mode, an eleventh-order asymmetric (A11) mode, or a thirteenth-order asymmetric (A13) mode.

8. The apparatus of claim 1 , wherein the ground electrode is a first ground electrode, the apparatus further comprising:
a second ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, wherein the second ground electrode is also separated from the signal electrode by a second gap comprising the longitudinal distance, and wherein the acoustic wave also resonates within the second gap; and
a second release window formed within the piezoelectric thin film adjacent to the second ground electrode.

9. The apparatus of claim 8 , wherein the signal electrode, the first ground electrode, and the second ground electrode are interdigital electrodes, and wherein a width of each of the first ground electrode and the second ground electrode is half of a width of the signal electrode.

10. An acoustic filter comprising:
a first shunt resonator array coupled to a ground;
a second shunt resonator array coupled to the ground; and
a series resonator array coupled between the first shunt resonator array and the second shunt resonator array, wherein the first shunt resonator array, the second shunt resonator array, and the series resonator array each comprises an acoustic resonator comprising:
a piezoelectric thin film suspended above a carrier substrate, wherein the piezoelectric thin film comprises one of lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film;
a signal electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction;
a ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, wherein the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates; and
a release window formed within the piezoelectric thin film adjacent to the ground electrode.

11. The acoustic filter of claim 10 , further comprising:
a series inductor coupled in parallel to the series resonator array;
a first shunt inductor coupled in parallel to the first shunt resonator array; and
a second shunt inductor coupled in parallel to the second shunt resonator array, the series inductor, the first shunt inductor, and the second shunt inductor are selected to increase an electromechanical coupling of the acoustic filter.

12. The acoustic filter of claim 10 , further comprising:
a first impedance element coupled to the ground and coupled in parallel with the first shunt resonator array; and
a second impedance element coupled to the ground and coupled in parallel with the second shunt resonator array, wherein the series resonator array is further coupled between the first impedance element and the second impedance element.

13. The acoustic filter of claim 10 , wherein the piezoelectric thin film comprises one of a Z cut, a Y cut, or an X cut.

14. The acoustic filter of claim 10 , wherein a resonant frequency of the Lamb wave mode is determined at least in part by the longitudinal distance of the gap, and the longitudinal distance is between 2 μm and 10 μm.

15. The acoustic filter of claim 10 , wherein the Lamb wave mode is one of a first-order asymmetric (A1) mode, a third-order asymmetric (A3) mode, a fifth-order asymmetric (A5) mode, a seventh-order asymmetric (A7) mode, a ninth-order asymmetric (A9) mode, an eleventh-order asymmetric (A11) mode, or a thirteenth-order asymmetric (A13) mode.

16. The acoustic filter of claim 10 , wherein the carrier substrate also comprises LiNbO 3 or LiTaO 3 , the acoustic resonator further comprises a cavity formed between the carrier substrate and the piezoelectric thin film, and wherein a length of the gap between the signal electrode and the ground electrode comprises a length of the cavity.

17. The acoustic filter of claim 16 , wherein the gap of the acoustic resonator of each of the first shunt resonator array and of the second shunt resonator array is a first gap, and the gap of the acoustic resonator of the series resonator array is a second gap that is different in size than the first gap.

18. The acoustic filter of claim 17 , wherein a first resonant frequency of the first shunt resonator array and of the second shunt resonator array is determined by the first gap and a second resonant frequency of the series resonator array is determined by the second gap, and wherein the first gap is between 5 μm to 8 μm and the second gap is between 2 μm to 4 μm.

19. The acoustic filter of claim 10 , wherein the ground electrode is a first ground electrode, the acoustic resonator further comprising:
a second ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, wherein the second ground electrode is also separated from the signal electrode by a second gap comprising the longitudinal distance, and wherein the acoustic wave also resonates within the second gap; and
a second release window formed within the piezoelectric thin film adjacen

Assignees

• Board Of Trustees Of The Univ Of Illinois
• Univ Illinois

Inventors

• Yang Yansong
• Lu Ruochen
• Gong Songbin

Classifications

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/02031

  consisting of ceramic · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H9/176

  consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title